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Characteristics of the Surface-State Charge (Qss) of Thermally Oxidized Silicon
Open accessAbstract
The nature of the surface‐state charge (Q ss ) associated with thermally oxidized silicon has been studied experimentally using MOS structures. The effects of oxidation conditions, silicon orientation, annealing treatments, oxide thickness, and electric field were examined, as well as the physical location of the surface‐state charge. The results indicate that the surface‐state charge can be reproducibly controlled over a range , and that it is an intrinsic property of the silicon dioxide‐silicon system. It appears to be due to an excess silicon species introduced into the oxide layer near the silicon during the oxidation process.
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Cites
Multiple-beam interferometry of surfaces and films
Tolansky, S. (1948) · Cited by 740
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Review on high-k dielectrics reliability issues
Ribes, G., Mitard, J., Denais, M., Bruyere, S., Monsieur, F., Parthasarathy, C., Vincent, E., & Ghibaudo, G. (2005) · IEEE Transactions on Device and Materials Reliability · doi:10.1109/tdmr.2005.845236 · Cited by 533
Depolarization fields in thin ferroelectric films
Mehta, R. R., Silverman, B. D., & Jacobs, J. T. (1973) · Journal of Applied Physics · doi:10.1063/1.1662770 · Cited by 522
Transport Properties of Electrons in Inverted Silicon Surfaces
Fang, F. F., & Fowler, A. B. (1968) · Physical Review · doi:10.1103/physrev.169.619 · Cited by 332
Metadata
- Authors
- Deal, B. E., Sklar, M., Grove, A. S., & Snow, E. H.
- Venue
- Journal of The Electrochemical Society
- Publisher
- The Electrochemical Society
- Published
- 1967
- Volume
- 114
- Issue
- 3
- Pages
- 266
- ISSN
- 0013-4651 (ISSN-L)
- OpenAlex
- W2156691787
- Cited by
- 721
- References
- 1
- FWCI
- 48.69
- Type
- journal article
- Language
- en
- Open access
- bronze
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- Deal, B. E., Sklar, M., Grove, A. S., & Snow, E. H. (1967). Characteristics of the Surface-State Charge (Qss) of Thermally Oxidized Silicon. Journal of The Electrochemical Society. https://doi.org/10.1149/1.2426565
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