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Characteristics of the Surface-State Charge (Qss) of Thermally Oxidized Silicon

Open access
Deal, B. E., Sklar, M., Grove, A. S., Snow, E. H.·1967·Journal of The Electrochemical Society

Abstract

The nature of the surface‐state charge (Q ss ) associated with thermally oxidized silicon has been studied experimentally using MOS structures. The effects of oxidation conditions, silicon orientation, annealing treatments, oxide thickness, and electric field were examined, as well as the physical location of the surface‐state charge. The results indicate that the surface‐state charge can be reproducibly controlled over a range , and that it is an intrinsic property of the silicon dioxide‐silicon system. It appears to be due to an excess silicon species introduced into the oxide layer near the silicon during the oxidation process.

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Metadata

Authors
Deal, B. E., Sklar, M., Grove, A. S., & Snow, E. H.
Venue
Journal of The Electrochemical Society
Published
1967
Volume
114
Issue
3
Pages
266
ISSN
0013-4651 (ISSN-L)
OpenAlex
W2156691787
Cited by
721
References
1
FWCI
48.69
Type
journal article
Language
en
Open access
bronze

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CoChat. (2026). Citation check: Characteristics of the Surface-State Charge (Qss) of Thermally Oxidized Silicon. https://app.cochat.ai/papers/10.1149/1.2426565
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Deal, B. E., Sklar, M., Grove, A. S., & Snow, E. H. (1967). Characteristics of the Surface-State Charge (Qss) of Thermally Oxidized Silicon. Journal of The Electrochemical Society. https://doi.org/10.1149/1.2426565

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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).

Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.