A Review on Conduction Mechanisms in Dielectric Films
Open accessAbstract
The conduction mechanisms in dielectric films are crucial to the successful applications of dielectric materials. There are two types of conduction mechanisms in dielectric films, that is, electrode-limited conduction mechanism and bulk-limited conduction mechanism. The electrode-limited conduction mechanism depends on the electrical properties at the electrode-dielectric interface. Based on this type of conduction mechanism, the physical properties of the barrier height at the electrode-dielectric interface and the effective mass of the conduction carriers in dielectric films can be extracted. The bulk-limited conduction mechanism depends on the electrical properties of the dielectric itself. According to the analyses of bulk-limited conduction mechanisms, several important physical parameters in the dielectric films can be obtained, including the trap level, the trap spacing, the trap density, the carrier drift mobility, the dielectric relaxation time, and the density of states in the conduction band. In this paper, the analytical methods of conduction mechanisms in dielectric films are discussed in detail.
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The hardware-aware approach can generally be applied to all memristors exhibiting non-Ohmic conduction behavior and can address any hardware nonideality issues.
“This hardware-aware approach can generally be applied to all memristors exhibiting non-Ohmic conduction behavior; furthermore, it can address any hardware nonideality issues41.”
From Flexible self-rectifying synapse array for energy-efficient edge multiplication in electrocardiogram diagnosis (2025) · cites this paper as [41]
Schottky emission dominates the conduction of the device.
“Both plots confirmed that the Schottky emission dominates the conduction of the device.[ 24 ]”
From Retention Secured Nonlinear and Self-Rectifying Analog Charge Trap Memristor for Energy-Efficient Neuromorphic Hardware (2023) · cites this paper as [24]
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References 28 · Cited by 1,574
- Authors
- Chiu, F.-C.
- Affiliations
- Ming Chuan University (TW)
- Corresponding author
- Chiu, Fu-Chien
- ORCID
- Chiu, Fu-Chien
- Venue
- Advances in Materials Science and Engineering
- Publisher
- Wiley
- Published
- 2014
- Volume
- 2014
- Pages
- 1-18
- ISSN
- 1687-8434 (ISSN-L)
- 1687-8442
- OpenAlex
- W2095053155
- Cited by
- 1,574
- References
- 28
- Citations by year
- 2026: 111 · 2025: 179 · 2024: 190 · 2023: 163 · 2022: 190 · 2021: 163 · 2020: 130 · 2019: 128 · 2018: 115 · 2017: 111 · 2016: 54 · 2015: 31 · 2014: 8 · 2013: 1
- FWCI
- 36.14
- Type
- journal article
- Language
- en
- Open access
- gold
- doi.org
- Locations
- Advances in Materials Science and Engineering (publishedVersion, cc-by)
- DOAJ (DOAJ: Directory of Open Access Journals) (submittedVersion, cc-by-sa)
- Funders
- National Science Council (NSC 102-2221-E-130-015-MY2)
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Semiconductor materials and devices
- Physical Sciences › Materials Science › Materials Chemistry › High voltage insulation and dielectric phenomena
- Physical Sciences › Physics and Astronomy › Atomic and Molecular Physics, and Optics › Electrical and Electromagnetic Research
- Keywords
- conduction mechanism, dielectric films, electrode-dielectric interface, barrier height, carrier effective mass, trap states, trap density, carrier drift mobility, dielectric relaxation time, conduction band density of states
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Confidence bands are shown only for fields calibrated on our annotated test set. None is calibrated yet, so no band is shown.
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