Cited by 1,574Semiconductor materials and devicesHigh voltage insulation and dielectric phenomenaElectrical and Electromagnetic Research

A Review on Conduction Mechanisms in Dielectric Films

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Chiu, Fu-Chien·2014·Advances in Materials Science and Engineering

Abstract

The conduction mechanisms in dielectric films are crucial to the successful applications of dielectric materials. There are two types of conduction mechanisms in dielectric films, that is, electrode-limited conduction mechanism and bulk-limited conduction mechanism. The electrode-limited conduction mechanism depends on the electrical properties at the electrode-dielectric interface. Based on this type of conduction mechanism, the physical properties of the barrier height at the electrode-dielectric interface and the effective mass of the conduction carriers in dielectric films can be extracted. The bulk-limited conduction mechanism depends on the electrical properties of the dielectric itself. According to the analyses of bulk-limited conduction mechanisms, several important physical parameters in the dielectric films can be obtained, including the trap level, the trap spacing, the trap density, the carrier drift mobility, the dielectric relaxation time, and the density of states in the conduction band. In this paper, the analytical methods of conduction mechanisms in dielectric films are discussed in detail.

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Crossref · 10.1155/2014/578168

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References 28 · Cited by 1,574

Authors
Chiu, F.-C.
Affiliations
Ming Chuan University (TW)
Corresponding author
Chiu, Fu-Chien
Venue
Advances in Materials Science and Engineering
Publisher
Wiley
Published
2014
Volume
2014
Pages
1-18
ISSN
  • 1687-8434 (ISSN-L)
  • 1687-8442
OpenAlex
W2095053155
Cited by
1,574
References
28
Citations by year
2026: 111 · 2025: 179 · 2024: 190 · 2023: 163 · 2022: 190 · 2021: 163 · 2020: 130 · 2019: 128 · 2018: 115 · 2017: 111 · 2016: 54 · 2015: 31 · 2014: 8 · 2013: 1
FWCI
36.14
Type
journal article
Language
en
Open access
Locations
  • Advances in Materials Science and Engineering (publishedVersion, cc-by)
  • DOAJ (DOAJ: Directory of Open Access Journals) (submittedVersion, cc-by-sa)
Funders
National Science Council (NSC 102-2221-E-130-015-MY2)
Topics
  • Physical Sciences › Engineering › Electrical and Electronic Engineering › Semiconductor materials and devices
  • Physical Sciences › Materials Science › Materials Chemistry › High voltage insulation and dielectric phenomena
  • Physical Sciences › Physics and Astronomy › Atomic and Molecular Physics, and Optics › Electrical and Electromagnetic Research
Keywords
conduction mechanism, dielectric films, electrode-dielectric interface, barrier height, carrier effective mass, trap states, trap density, carrier drift mobility, dielectric relaxation time, conduction band density of states

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