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Cited by 484

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Emission characteristics of photoconductive antennas based on low-temperature-grown GaAs and semi-insulating GaAs

Tani, Masahiko, Matsuura, Shuji, Sakai, Kiyomi, Nakashima, Shin-ichi·1997·Applied Optics

Abstract

Terahertz radiation was generated with several designs of photoconductive antennas (three dipoles, a bow tie, and a coplanar strip line) fabricated on low-temperature-grown (LT) GaAs and semi-insulating (SI) GaAs, and the emission properties of the photoconductive antennas were compared with each other. The radiation spectrum of each antenna was characterized with the photoconductive sampling technique. The total radiation power was also measured by a bolometer for comparison of the relative radiation power. The radiation spectra of the LT-GaAs-based and SI-GaAs-based photoconductive antennas of the same design showed no significant difference. The pump-power dependencies of the radiation power showed saturation for higher pump intensities, which was more serious in SI-GaAs-based antennas than in LT-GaAs-based antennas. We attributed the origin of the saturation to the field screening of the photocarriers.

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Metadata

Authors
Tani, M., Matsuura, S., Sakai, K., & Nakashima, S.-I.
Venue
Applied Optics
Published
1997-10-20
Volume
36
Issue
30
Pages
7853
ISSN
  • 0003-6935 (ISSN-L)
  • 1539-4522
OpenAlex
W2165334822
Cited by
484
References
1
FWCI
3.52
Type
journal article
Language
en
Open access
closed

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CoChat. (2026). Citation check: Emission characteristics of photoconductive antennas based on low-temperature-grown GaAs and semi-insulating GaAs. https://app.cochat.ai/papers/10.1364/ao.36.007853
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Tani, M., Matsuura, S., Sakai, K., & Nakashima, S.-I. (1997). Emission characteristics of photoconductive antennas based on low-temperature-grown GaAs and semi-insulating GaAs. Applied Optics. https://doi.org/10.1364/ao.36.007853

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