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Cited by 275

The DOI matches its Crossref record; 12 of the 12 references it cites were found in a registry or an index.

13-μm InAs/GaAs quantum-dot lasers monolithically grown on Si substrates

Open access
Wang, Ting, Liu, Huiyun, Lee, Andrew, Pozzi, Francesca, Seeds, Alwyn·2011·Optics Express

Abstract

We report the first operation of an electrically pumped 1.3-μm InAs/GaAs quantum-dot laser epitaxially grown on a Si (100) substrate. The laser structure was grown directly on the Si substrate by molecular beam epitaxy. Lasing at 1.302 μm has been demonstrated with threshold current density of 725 A/cm2 and output power of ~26 mW for broad-area lasers with as-cleaved facets at room temperature. These results are directly attributable to the optimized growth temperature of the initial GaAs nucleation layer.

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Metadata

Authors
Wang, T., Liu, H., Lee, A., Pozzi, F., & Seeds, A.
Venue
Optics Express
Published
2011-05-26
Volume
19
Issue
12
Pages
11381
ISSN
1094-4087 (ISSN-L)
OpenAlex
W1990927334
Cited by
275
References
12
FWCI
11.82
Type
journal article
Language
en
Open access
gold

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CoChat. (2026). Citation check: 13-μm InAs/GaAs quantum-dot lasers monolithically grown on Si substrates. https://app.cochat.ai/papers/10.1364/oe.19.011381
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Wang, T., Liu, H., Lee, A., Pozzi, F., & Seeds, A. (2011). 13-μm InAs/GaAs quantum-dot lasers monolithically grown on Si substrates. Optics Express. https://doi.org/10.1364/oe.19.011381

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Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.