The DOI matches its Crossref record; 12 of the 12 references it cites were found in a registry or an index.
13-μm InAs/GaAs quantum-dot lasers monolithically grown on Si substrates
Open accessAbstract
We report the first operation of an electrically pumped 1.3-μm InAs/GaAs quantum-dot laser epitaxially grown on a Si (100) substrate. The laser structure was grown directly on the Si substrate by molecular beam epitaxy. Lasing at 1.302 μm has been demonstrated with threshold current density of 725 A/cm2 and output power of ~26 mW for broad-area lasers with as-cleaved facets at room temperature. These results are directly attributable to the optimized growth temperature of the initial GaAs nucleation layer.
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High-performance Ge-on-Si photodetectors
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Recent progress in lasers on silicon
Liang, D., & Bowers, J. E. (2010) · Nature Photonics · doi:10.1038/nphoton.2010.167 · Cited by 1,122
Ge-on-Si laser operating at room temperature
Liu, J., Sun, X., Camacho-Aguilera, R., Kimerling, L. C., & Michel, J. (2010) · Optics Letters · doi:10.1364/ol.35.000679 · Cited by 880
Growth and properties of GaAs/AlGaAs on nonpolar substrates using molecular beam epitaxy
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Quantum dot laser diode with low threshold and low internal loss
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Tanabe, K., Guimard, D., Bordel, D., Iwamoto, S., & Arakawa, Y. (2010) · Optics Express · doi:10.1364/oe.18.010604 · Cited by 92
Self-organised quantum dots as dislocation filters: the case of GaAs-based lasers on silicon
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Chen, S., Li, W., Wu, J., Jiang, Q., Tang, M., Shutts, S., Elliott, S. N., Sobiesierski, A., Seeds, A. J., Ross, I., et al. (2016) · Nature Photonics · doi:10.1038/nphoton.2016.21 · Cited by 877
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High performance continuous wave 1.3 μ m quantum dot lasers on silicon
Liu, A. Y., Zhang, C., Norman, J., Snyder, A., Lubyshev, D., Fastenau, J. M., Liu, A. W. K., Gossard, A. C., & Bowers, J. E. (2014) · Applied Physics Letters · doi:10.1063/1.4863223 · Cited by 340
Hybrid integration methods for on-chip quantum photonics
Kim, J.-H., Aghaeimeibodi, S., Carolan, J., Englund, D., & Waks, E. (2020) · Optica · doi:10.1364/optica.384118 · Cited by 272
The Emergence of Silicon Photonics as a Flexible Technology Platform
Chen, X., Milosevic, M. M., Stankovic, S., Reynolds, S., Bucio, T. D., Li, K., Thomson, D. J., Gardes, F., & Reed, G. T. (2018) · Proceedings of the IEEE · doi:10.1109/jproc.2018.2854372 · Cited by 247
Metadata
- Authors
- Wang, T., Liu, H., Lee, A., Pozzi, F., & Seeds, A.
- Venue
- Optics Express
- Publisher
- Optica Publishing Group
- Published
- 2011-05-26
- Volume
- 19
- Issue
- 12
- Pages
- 11381
- ISSN
- 1094-4087 (ISSN-L)
- OpenAlex
- W1990927334
- Cited by
- 275
- References
- 12
- FWCI
- 11.82
- Type
- journal article
- Language
- en
- Open access
- gold
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- Wang, T., Liu, H., Lee, A., Pozzi, F., & Seeds, A. (2011). 13-μm InAs/GaAs quantum-dot lasers monolithically grown on Si substrates. Optics Express. https://doi.org/10.1364/oe.19.011381
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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
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