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High performance continuous wave 1.3 μ m quantum dot lasers on silicon

Liu, Alan Y., Zhang, Chong, Norman, Justin, Snyder, Andrew, Lubyshev, Dmitri, Fastenau, Joel M., Liu, Amy W. K., Gossard, Arthur C., Bowers, John E.·2014·Applied Physics Letters

Abstract

We demonstrate record performance 1.3 μm InAs quantum dot lasers grown on silicon by molecular beam epitaxy. Ridge waveguide lasers fabricated from the as-grown material achieve room temperature continuous wave thresholds as low as 16 mA, output powers exceeding 176 mW, and lasing up to 119 °C. P-modulation doping of the active region improves T0 to the range of 100–200 K while maintaining low thresholds and high output powers. Device yield is presented showing repeatable performance across different dies and wafers.

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Metadata

Authors
Liu, A. Y., Zhang, C., Norman, J., Snyder, A., Lubyshev, D., Fastenau, J. M., Liu, A. W. K., Gossard, A. C., & Bowers, J. E.
Venue
Applied Physics Letters
Published
2014-01-27
Volume
104
Issue
4
Pages
041104
ISSN
  • 0003-6951 (ISSN-L)
  • 1077-3118
OpenAlex
W2063176029
Cited by
340
References
10
FWCI
24.96
Type
journal article
Language
en
Open access
closed

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CoChat. (2026). Citation check: High performance continuous wave 1.3 μ m quantum dot lasers on silicon. https://app.cochat.ai/papers/10.1063/1.4863223
The paper
Liu, A. Y., Zhang, C., Norman, J., Snyder, A., Lubyshev, D., Fastenau, J. M., Liu, A. W. K., Gossard, A. C., & Bowers, J. E. (2014). High performance continuous wave 1.3 μ m quantum dot lasers on silicon. Applied Physics Letters. https://doi.org/10.1063/1.4863223

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Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.