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25Gb/s 1V-driving CMOS ring modulator with integrated thermal tuning

Open access
Li, Guoliang, Zheng, Xuezhe, Yao, Jin, Thacker, Hiren, Shubin, Ivan, Luo, Ying, Raj, Kannan, Cunningham, John E., Krishnamoorthy, Ashok V.·2011·Optics Express

Abstract

We report a high-speed ring modulator that fits many of the ideal qualities for optical interconnect in future exascale supercomputers. The device was fabricated in a 130 nm SOI CMOS process, with 7.5 μm ring radius. Its high-speed section, employing PN junction that works at carrier-depletion mode, enables 25 Gb/s modulation and an extinction ratio >5 dB with only 1V peak-to-peak driving. Its thermal tuning section allows the device to work in broad wavelength range, with a tuning efficiency of 0.19 nm/mW. Based on microwave characterization and circuit modeling, the modulation energy is estimated ~7 fJ/bit. The whole device fits in a compact 400 μm2 footprint.

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Metadata

Authors
Li, G., Zheng, X., Yao, J., Thacker, H., Shubin, I., Luo, Y., Raj, K., Cunningham, J. E., & Krishnamoorthy, A. V.
Venue
Optics Express
Published
2011-10-03
Volume
19
Issue
21
Pages
20435
ISSN
1094-4087 (ISSN-L)
OpenAlex
W2050290349
Cited by
238
References
0
FWCI
20.72
Type
journal article
Language
en
Open access
gold

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CoChat. (2026). Citation check: 25Gb/s 1V-driving CMOS ring modulator with integrated thermal tuning. https://app.cochat.ai/papers/10.1364/oe.19.020435
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Li, G., Zheng, X., Yao, J., Thacker, H., Shubin, I., Luo, Y., Raj, K., Cunningham, J. E., & Krishnamoorthy, A. V. (2011). 25Gb/s 1V-driving CMOS ring modulator with integrated thermal tuning. Optics Express. https://doi.org/10.1364/oe.19.020435

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