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The DOI matches its Crossref record; 2 of the 2 references it cites were found in a registry or an index.

Continuous-wave InAs/GaAs quantum-dot laser diodes monolithically grown on Si substrate with low threshold current densities

Open access
Lee, Andrew, Jiang, Qi, Tang, Mingchu, Seeds, Alwyn, Liu, Huiyun·2012·Optics Express

Abstract

We report the first room-temperature continuous-wave operation of III-V quantum-dot laser diodes monolithically grown on a Si substrate. Long-wavelength InAs/GaAs quantum-dot structures were fabricated on Ge-on-Si substrates. Room-temperature lasing at a wavelength of 1.28 μm has been achieved with threshold current densities of 163 A/cm(2) and 64.3 A/cm(2) under continuous-wave and pulsed conditions for ridge-waveguide lasers with as cleaved facets, respectively. The value of 64.3 A/cm(2) represents the lowest room-temperature threshold current density for any kind of laser on Si to date.

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Metadata

Authors
Lee, A., Jiang, Q., Tang, M., Seeds, A., & Liu, H.
Venue
Optics Express
Published
2012-09-12
Volume
20
Issue
20
Pages
22181
ISSN
1094-4087 (ISSN-L)
OpenAlex
W2042579667
Cited by
175
References
2
FWCI
8.47
Type
journal article
Language
en
Open access
gold

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CoChat. (2026). Citation check: Continuous-wave InAs/GaAs quantum-dot laser diodes monolithically grown on Si substrate with low threshold current densities. https://app.cochat.ai/papers/10.1364/oe.20.022181
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Lee, A., Jiang, Q., Tang, M., Seeds, A., & Liu, H. (2012). Continuous-wave InAs/GaAs quantum-dot laser diodes monolithically grown on Si substrate with low threshold current densities. Optics Express. https://doi.org/10.1364/oe.20.022181

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