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A 112 Gb/s all-silicon micro-ring photodetector for datacom applications
Abstract
We demonstrate an all-silicon micro-ring resonant photodetector with a responsivity of 0.23 A/W and dark current <100nA capable of detecting 112 Gb/s PAM4 signal with an eye closure penalty of <1.0 dB.
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Although relatively easier to achieve in Si APDs at 850 nm, simultaneous (at the same bias voltage) optimization of gain-BW-noise has remained challenging for low-voltage Si/Ge APDs or Si resonant APDs in C/L/O bands.
“Although relatively easier to achieve in Si APDs at 850 nm117, simultaneous (at the same bias voltage) optimization of gain-BW-noise has remained challenging for low-voltage Si/Ge APDs118 or Si resonant APDs119,120 in C/L/O bands.”
From Roadmapping the next generation of silicon photonics (2024) · cites this paper as [119]
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Cites
Heterogeneously Integrated InP\/Silicon Photonics: Fabricating Fully Functional Transceivers
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State‐of‐the‐art all‐silicon sub‐bandgap photodetectors at telecom and datacom wavelengths
Casalino, M., Coppola, G., Rue, R. M. D. L., & Logan, D. F. (2016) · Laser & Photonics Review · doi:10.1002/lpor.201600065 · Cited by 119
10 Gb/s Error-Free Operation of All-Silicon Ion-Implanted-Waveguide Photodiodes at 1.55 $\mu{\rm m}$
Grote, R. R., Padmaraju, K., Souhan, B., Driscoll, J. B., Bergman, K., & Osgood, R. M. (2012) · IEEE Photonics Technology Letters · doi:10.1109/lpt.2012.2223664 · Cited by 49
Using carrier-depletion silicon modulators for optical power monitoring
Yu, H., Korn, D., Pantouvaki, M., Campenhout, J. V., Komorowska, K., Verheyen, P., Lepage, G., Absil, P. P., Hillerkuss, D., Alloatti, L., et al. (2012) · Optics Letters · doi:10.1364/ol.37.004681 · Cited by 42
Photon-assisted tunneling for sub-bandgap light detection in silicon PN-doped waveguides
You, J.-B., Kwon, H., Kim, J., Park, H., & Yu, K. (2017) · Optics Express · doi:10.1364/oe.25.004284 · Cited by 35
40 Gb/s All-Silicon Photodetector Based on Microring Resonators
Li, X., Li, Z., Xiao, X., Xu, H., Yu, J., & Yu, Y. (2015) · IEEE Photonics Technology Letters · doi:10.1109/lpt.2015.2390619 · Cited by 33
Demonstration of a 50 Gb/s all-silicon waveguide photodetector for photonic integration
Sakib, M., Sun, J., Kumar, R., Driscoll, J. B., & Rong, H. (2018) · Conference on Lasers and Electro-Optics · doi:10.1364/cleo_at.2018.jth5a.7 · Cited by 21
Self-citationZhu, H., Goi, K., & Ogawa, K. (2017) · IEEE Journal of Selected Topics in Quantum Electronics · doi:10.1109/jstqe.2017.2736443 · Cited by 18
Two-photon-absorption-based optical power monitor in silicon rib waveguides
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- Hsieh, 2010, Group IV Photonics, 326
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Roadmapping the next generation of silicon photonics
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“Improving thermal insulation reduces their power consumption by > 10 × at the expense of an even higher response time [76].”
BackgroundCo-packaged optics (CPO): status, challenges, and solutions
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“At the receiving end, the data rate of a microring pho-todetector (MRPD) has reached 112 Gb/s [111].”
BackgroundSharma, J., Xuan, Z., Li, H., Kim, T., Kumar, R., Sakib, M., Hsu, C.-M., Ma, C., Rong, H., Balamurugan, G., et al. (2021) · IEEE Journal of Solid-State Circuits · doi:10.1109/jssc.2021.3134221 · Cited by 74
Self-citationAn 8 × 160 Gb s−1 all-silicon avalanche photodiode chip
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Peng, Y., Yuan, Y., Sorin, W. V., Cheung, S., Huang, Z., Fiorentino, M., & Beausoleil, R. G. (2023) · Optics Letters · doi:10.1364/ol.484932 · Cited by 23
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“Resonant micro-ring photodetectors achieve better responsivity [28].”
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de, M., Orden, D. A. V., Fini, J. M., Wade, M. T., & Ram, R. J. (2021) · APL Photonics · doi:10.1063/5.0047037 · Cited by 17
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“Fortunately, the state-of-the-art modulators[34]–[36] and photodetectors[37], [38] are capable of providing ultrasmall tsi and tpd, for example 10 ps or even less.”
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Peng, Y., Yuan, Y., Sorin, W. V., Cheung, S. S., Huang, Z., Marco Fiorentino, B., & Beausoleil, R. G. (2023) · Opto-Electronics and Communications Conference (OECC) · doi:10.1109/oecc56963.2023.10209842 · Cited by 6
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“It is widely reported that the all-silicon photodetectors based on sub-bandgap absorption mechanisms can achieve bandwidths over 25 GHz [35], [36].”
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“INTRODUCTION All-silicon microring resonator (MRR) photodiodes (PDs), benefit from optical resonant enhancement effect, are great candidates for silicon photonics integrated circuits due to their small footprint, wavelength division multiplexing suitability and absence of germanium growth [1-3].”
BackgroundXie, Y., Das, R., & Knights, A. P. (2023) · Photonics North (PN) · doi:10.1109/pn58661.2023.10222997 · Cited by 1
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Universal All-Silicon Microring Modulator and Detector for O-Band operation
Chen, Y. W., Zhang, W., Chang, T.-Y., Vizabaskaran, H., Besque, J. L., Yan, X., Ebert, M., Littlejohns, C. G., & Thomson, D. J. (2025) · IEEE Silicon Photonics Conference (SiPhotonics) · doi:10.1109/siphotonics64386.2025.10985653
“Recently, reported devices have achieved a responsivity of 0.23 A/W and detection rates up to 112 Gb/s (56 GBaud PAM4) [8].”
Influential
Metadata
- Authors
- Sakib, M., Liao, P., Kumar, R., Huang, D., Su, G.-L., Ma, C., & Rong, H.
- Affiliations
- Intel (United States) (US)
- Venue
- Optical Fiber Communication Conference Postdeadline Papers 2020
- Publisher
- Optica Publishing Group
- Published
- 2020
- Pages
- Th4A.2
- OpenAlex
- W3012310316
- Cited by
- 25
- References
- 9
- Citations by year
- 2026: 1 · 2025: 2 · 2024: 4 · 2023: 8 · 2022: 4 · 2021: 5 · 2020: 1
- FWCI
- 6.33
- Type
- conference paper
- Language
- en
- Open access
- closed
- Locations
- Optical Fiber Communication Conference (publishedVersion)
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Photonic and Optical Devices
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Advanced Photonic Communication Systems
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Semiconductor Lasers and Optical Devices
- Keywords
- silicon photonics, microring resonators, photodetectors, PAM-4, 112 Gb/s, responsivity, dark current
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