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High-channel-count 20 GHz passively mode-locked quantum dot laser directly grown on Si with 41 Tbit/s transmission capacity
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Low cost, small footprint, highly efficient and mass producible on-chip wavelength-division-multiplexing (WDM) light sources are key components in future silicon electronic and photonic integrated circuits (EPICs) which can fulfill the rapidly increasing bandwidth and lower energy per bit requirements. We present here, for the first time, a low noise high-channel-count 20 GHz passively mode-locked quantum dot laser grown on complementary metal-oxide-semiconductor compatible on-axis (001) silicon substrate. The laser demonstrates a wide mode-locking regime in the O-band. A record low timing jitter value of 82.7 fs (4 - 80 MHz) and a narrow RF 3-dB linewidth of 1.8 kHz are measured. The 3 dB optical bandwidth of the comb is 6.1 nm (containing 58 lines, with 80 lines within the 10 dB bandwidth). The integrated average relative intensity noise values of the whole spectrum and a single wavelength channel are - 152 dB/Hz and - 133 dB/Hz in the frequency range from 10 MHz to 10 GHz, respectively. Utilizing 64 channels, an aggregate total transmission capacity of 4.1 terabits per second is realized by employing a 32 Gbaud Nyquist four-level pulse amplitude modulation format. The demonstrated performance makes the laser a compelling on-chip WDM source for multi-terabit/s optical interconnects in future large-scale silicon EPICs.
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“Comb lasers110 such as passive semiconductor mode-locked lasers (SMLLs)111 are being actively pursued by various research groups.”
From Roadmapping the next generation of silicon photonics (2024) · cites this paper as [111]
In the citing paper
“The linewidth of passive SMLLs111 is usually lower than DFB arrays22.”
From Roadmapping the next generation of silicon photonics (2024) · cites this paper as [111]
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Metadata
- Authors
- Liu, S., Wu, X., Jung, D., Norman, J. C., Kennedy, M. J., Tsang, H. K., Gossard, A. C., & Bowers, J. E.
- Affiliations
- University of California, Santa Barbara (US)
- Chinese University of Hong Kong (HK)
- Corresponding author
- Liu, Songtao
- Venue
- Optica
- Publisher
- Optica Publishing Group
- Published
- 2019-01-25
- Volume
- 6
- Issue
- 2
- Pages
- 128
- ISSN
- 2334-2536 (ISSN-L)
- OpenAlex
- W2904141726
- Cited by
- 214
- References
- 36
- Citations by year
- 2026: 19 · 2025: 23 · 2024: 41 · 2023: 19 · 2022: 29 · 2021: 30 · 2020: 29 · 2019: 24
- FWCI
- 10.07
- Type
- journal article
- Language
- en
- Open access
- gold
- doi.org
- Locations
- Optica (publishedVersion)
- arXiv (Cornell University) (submittedVersion)
- Figshare (submittedVersion, cc-by)
- OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information) (submittedVersion)
- arXiv (Cornell University)
- Funders
- Advanced Research Projects Agency–Energy (DE-AR0000843)
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Semiconductor Lasers and Optical Devices
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Photonic and Optical Devices
- Physical Sciences › Physics and Astronomy › Atomic and Molecular Physics, and Optics › Advanced Fiber Laser Technologies
- Keywords
- quantum dot lasers, passively mode-locked lasers, silicon photonics, wavelength division multiplexing, on-chip light sources, timing jitter, relative intensity noise, RF linewidth, optical interconnects, silicon photonics integrated circuits
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