Cited by 4Ferroelectric and Piezoelectric MaterialsElectronic and Structural Properties of OxidesElectrical and Thermal Properties of Materials

Synthesis and characterisations of sol-gel-derived LaNiO3 thin-film electrodes on Si substrates

Hien, Vu Thu, Minh, Nguyen Duc, Hung, Vu Ngoc·2015·International Journal of Nanotechnology

Abstract

We present the fabrication and characterisation of conductive LaNiO3 (LNO) thin films, deposited on different substrates including Si(100), SiO2/Si(100) and Pt/Ti/SiO2/Si(100) by the sol–gel spin–coating technique. Deposition parameters, such as the sol concentration and annealing temperature as well as the number of coating layers, were optimised to obtain the desired film quality. X–ray diffraction analysis showed that crystalline and highly (110) oriented LNO thin films were obtained after annealing at 750C. Scanning electron microscopy images revealed that LNO films show a dense and smooth surface. Moreover, the crystallites' size increased with increasing film thickness, which resulted in the enhancement of electrical conductivity. The well–controlled crystallinity and low resistivity of 3.73 10–4Ω.cm, measured on a film thickness of 200 nm, indicate that LNO thin films can be used as the template and electrode for the fabrication of integrated piezoelectric thin–films on Si substrates.

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Crossref · 10.1504/ijnt.2015.067907

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  • The creation of a well-defined columnar grain structure in CSD LNO films is challenging to achieve on an amorphous substrate.

    “The creation of a well-defined columnar grain structure in CSD (Chemical Solution Deposition) LNO films is challenging to achieve on an amorphous substrate.”

    From Control of Columnar Grain Microstructure in CSD LaNiO3 Films (2023) · cites this paper as [24]

  • The resistivity of LNO films can vary from 100 to 10,000 μOhm·cm, depending on preparation techniques.

    “The resistivity of LNO films can vary from 100 to 10,000 μOhm·cm, depending on preparation techniques [23,24,25,26].”

    From Control of Columnar Grain Microstructure in CSD LaNiO3 Films (2023) · cites this paper as [24]

  • Most authors who studied CSD of LNO films on substrates of various structures reported films with a porous, polycrystalline structure and fine equiaxed grains.

    “Most of the authors who studied the CSD of LNO films on substrates of various structures reported films with a porous, polycrystalline structure and fine equiaxed grains [19,24,41,42].”

    From Control of Columnar Grain Microstructure in CSD LaNiO3 Films (2023) · cites this paper as [24]

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Authors
Hien, V. T., Minh, N. D., & Hung, V. N.
Affiliations
Trường Đại học Khoa học và Công nghệ Hà Nội (VN)
Venue
International Journal of Nanotechnology
Published
2015
Volume
12
Issue
5/6/7
Pages
496
ISSN
  • 1475-7435 (ISSN-L)
  • 1741-8151
OpenAlex
W2070678613
Cited by
4
References
0
Citations by year
2023: 1 · 2022: 1 · 2021: 1 · 2016: 1
FWCI
0.14
Type
journal article
Language
en
Open access
closed
Locations
International Journal of Nanotechnology (publishedVersion)
Funders
National Science Foundation
Topics
  • Physical Sciences › Materials Science › Materials Chemistry › Ferroelectric and Piezoelectric Materials
  • Physical Sciences › Materials Science › Materials Chemistry › Electronic and Structural Properties of Oxides
  • Physical Sciences › Engineering › Electrical and Electronic Engineering › Electrical and Thermal Properties of Materials
Keywords
LaNiO3, perovskite thin films, sol-gel spin coating, silicon substrate, thin film electrodes, electrical conductivity, crystallinity, annealing temperature, film thickness, piezoelectric thin films

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