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Overview of Phase-Change Chalcogenide Nonvolatile Memory Technology
Abstract
Phase-change nonvolatile semiconductor memory technology is based on an electrically initiated, reversible rapid amorphous-to-crystalline phase-change process in multicomponent chalcogenide alloy materials similar to those used in rewriteable optical disks. Long cycle life, low programming energy, and excellent scaling characteristics are advantages that make phase-change semiconductor memory a promising candidate to replace flash memory in future applications. Phase-change technology is being commercialized by a number of semiconductor manufacturers. Fundamental processes in phase-change semiconductor memory devices, device performance characteristics, and progress toward commercialization of the technology are reviewed.
Overview
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Cited by
CMOS Compatible Nanoscale Nonvolatile Resistance Switching Memory
Jo, S. H., & Lu, W. (2008) · Nano Letters · doi:10.1021/nl073225h · Cited by 406
Metadata
- Authors
- Hudgens, S., & Johnson, B.
- Venue
- MRS Bulletin
- Published
- 2004-11
- Volume
- 29
- Issue
- 11
- Pages
- 829-832
- ISSN
- 0883-7694 (ISSN-L)
- 1938-1425
- OpenAlex
- W2159510485
- Cited by
- 253
- References
- 0
- FWCI
- 5.62
- Type
- journal article
- Language
- en
- Open access
- closed
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- Hudgens, S., & Johnson, B. (2004). Overview of Phase-Change Chalcogenide Nonvolatile Memory Technology. MRS Bulletin. https://doi.org/10.1557/mrs2004.236
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