CMOS Compatible Nanoscale Nonvolatile Resistance Switching Memory
Abstract
We report studies on a nanoscale resistance switching memory structure based on planar silicon that is fully compatible with CMOS technology in terms of both materials and processing techniques employed. These two-terminal resistance switching devices show excellent scaling potential well beyond 10 Gb/cm2 and exhibit high yield (99%), fast programming speed (5 ns), high on/off ratio (10(3)), long endurance (10(6)), retention time (5 months), and multibit capability. These key performance metrics compare favorably with other emerging nonvolatile memory techniques. Furthermore, both diode-like (rectifying) and resistor-like (nonrectifying) behaviors can be obtained in the device switching characteristics in a controlled fashion. These results suggest that the CMOS compatible, nanoscale Si-based resistance switching devices may be well suited for ultrahigh-density memory applications.
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The change from OFF to ON state is explained by the formation of a dominating Ag filament.
“The change from OFF to ON state is explained by the formation of a dominating Ag filament (15,16).”
From Stochastic memristive devices for computing and neuromorphic applications (2013) · cites this paper as [15]
Binary resistive switching can be reliably observed in the fabricated two-terminal crossbar devices with an amorphous silicon layer between a silver top electrode and a polysilicon bottom electrode.
“Binary resistive switching can be reliably observed in such devices, as shown in the inset to Fig. 1a and as discussed earlier (15).”
From Stochastic memristive devices for computing and neuromorphic applications (2013) · cites this paper as [15]
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Nanoscale Memristor Device as Synapse in Neuromorphic Systems
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Self-citationObservation of conducting filament growth in nanoscale resistive memories
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Gaba, S., Sheridan, P., Zhou, J., Choi, S., & Lu, W. (2013) · Nanoscale · doi:10.1039/c3nr01176c · Cited by 307 · see citing works
“The change from OFF to ON state is explained by the formation of a dominating Ag filament (15,16).”
BackgroundSelf-citationAlloying conducting channels for reliable neuromorphic computing
Yeon, H., Lin, P., Choi, C., Tan, S. H., Park, Y., Lee, D., Lee, J., Xu, F., Gao, B., Wu, H., et al. (2020) · Nature Nanotechnology · doi:10.1038/s41565-020-0694-5 · Cited by 262 · see citing works
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Self-citationMeasuring the switching dynamics and energy efficiency of tantalum oxide memristors
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- Authors
- Jo, S. H., & Lu, W.
- Affiliations
- University of Michigan (US)
- Corresponding author
- Lu, Wei
- ORCID
- Venue
- Nano Letters
- Publisher
- American Chemical Society (ACS)
- Published
- 2008-01-25
- Volume
- 8
- Issue
- 2
- Pages
- 392-397
- ISSN
- 1530-6984 (ISSN-L)
- 1530-6992
- OpenAlex
- W2148331362
- Cited by
- 406
- References
- 1
- Citations by year
- 2026: 2 · 2025: 11 · 2024: 5 · 2023: 14 · 2022: 14 · 2021: 12 · 2020: 27 · 2019: 26 · 2018: 26 · 2017: 30 · 2016: 31 · 2015: 30 · 2014: 24 · 2013: 45 · 2012: 31
- FWCI
- 22.75
- Type
- journal article
- Language
- en
- Open access
- closed
- Locations
- Nano Letters (publishedVersion)
- PubMed (publishedVersion)
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Advanced Memory and Neural Computing
- Physical Sciences › Materials Science › Materials Chemistry › Phase-change materials and chalcogenides
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Ferroelectric and Negative Capacitance Devices
- Keywords
- non-volatile memory, CMOS compatibility, nanoscale memory devices, multi-bit memory, on/off current ratio, endurance and retention
- MeSH terms
- Equipment Design, Transistors, Electronic, Computer Storage Devices, Electric Impedance, Equipment Failure Analysis, Nanotechnology, Nanostructures
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