Cited by 4Multilevel Inverters and ConvertersAdvanced DC-DC ConvertersSilicon Carbide Semiconductor Technologies

Optimized Bidirectional PFC Rectifiers & Inverters - Si vs. SiC vs. GaN in 2L and 3L Topologies -

Open access
Wyss, Jonas, Biela, Jurgen·2018·2018 International Power Electronics Conference (IPEC-Niigata 2018 -ECCE Asia)

Abstract

In industrial drive systems, PFC converters are widely used. For PFC converters, a lot of different configurations and topologies exist and it is difficult to choose one. Therefore, in this paper, a comprehensive survey of possible configurations are optimized and compared against each other. The analysis shows the important aspects of the converter design and how the used semiconductor technology (Si, SiC and GaN) affects the total converter volume. A sensitivity analysis of certain power semiconductor parameters is performed to highlight the benefit of possible future developments of components and materials. In addition, the differences between the rectifier stage, where an EMI filter stage is necessary and the inverter stage, where the harmonic motor losses are influenced by the modulation scheme, are presented.

Integrity signals

Registry

Crossref · 10.23919/ipec.2018.8507372

Cites

15 of 15 references verified0 citation errors · 0 not checkable

Statistics

Recomputing p-values needs the paper’s full text.

Claims the paper makes

We couldn’t retrieve this paper’s full text, so its claims and self-check weren’t run. The registry and citation checks still apply.

Claims other papers make about this one

Each is checked against this paper’s own text: does it say what the citing paper says it does?

  • The T-type converter is a good candidate for three-phase bidirectional PFC converter in the future OBC market.

    “Therefore, the T-type converter is a good candidate for three-phase bidirectional PFC converter in the future OBC market [104].”

Cites

Flagged first, then by citations

Cited by

Sorted by citations

Authors
Wyss, J., & Biela, J.
Affiliations
ETH Zurich (CH)
Venue
2018 International Power Electronics Conference (IPEC-Niigata 2018 -ECCE Asia)
Publisher
IEEE
Published
2018-05
Pages
3734-3741
OpenAlex
W2898758443
Cited by
4
References
15
Citations by year
2024: 1 · 2023: 1 · 2021: 1 · 2019: 1
FWCI
0.80
Type
conference paper
Language
en
Open access
Licence
cc-by
Locations
  • International Power Electronics Conference (IPEC) (publishedVersion, cc-by)
  • Repository for Publications and Research Data (ETH Zurich) (submittedVersion, other-oa)
  • ETH Zürich Research Collection
Topics
  • Physical Sciences › Engineering › Electrical and Electronic Engineering › Multilevel Inverters and Converters
  • Physical Sciences › Engineering › Electrical and Electronic Engineering › Advanced DC-DC Converters
  • Physical Sciences › Engineering › Electrical and Electronic Engineering › Silicon Carbide Semiconductor Technologies
Keywords
power factor correction, rectifier, inverter, SiC, GaN, silicon, converter topology comparison, sensitivity analysis, EMI filter, modulation schemes, industrial drives

About these checks

Registry, retraction, Cites and statistics results are computed, not judged, with one exception: a printed reference that no index lists is read once by a model before it counts as a citation error. Claims are extracted by a model and kept only when their quote appears verbatim in the text; each cited source is then checked, with a model’s help, for whether it says what the claim relies on. Those verdicts can be wrong — read the claim’s quote and the cited source before relying on one.

Statistics and arithmetic are recomputed, not judged.

Confidence bands are shown only for fields calibrated on our annotated test set. None is calibrated yet, so no band is shown.

What counts as a claim ›How we measure confidence ›How we check this ›

Are you an author, or do you see a problem with this page? Request a review