CoChat
Sign Up
Cited by 20Laser-Ablation Synthesis of NanoparticlesGaN-based semiconductor devices and materialsSilicon Nanostructures and Photoluminescence

The DOI matches its Crossref record; 1 of the 1 references it cites were found in a registry or an index.

PL Tunable GaN Nanoparticles Synthesis through Femtosecond Pulsed Laser Ablation in Different Environments

Open access
Hao, Juan, Xu, Sijia, Gao, Bingrong, Pan, Lingyun·2020·Nanomaterials
DOI 10.3390/nano10030439PMC PMC7153704
Open this paper in CoChat — free accountOpen PDF

Abstract

The tunable photoluminescence (PL) property is very important for gallium nitride (GaN) nanoparticles in the application of ultraviolet and blue optoelectronic devices, while conventional methods are not so satisfactory that alternative methods for preparing GaN nanoparticles should be studied. In this paper, ultra-small and well dispersed GaN nanoparticles are fabricated through femtosecond pulse laser ablation in air, water and ethanol. For the PL spectra of GaN nanoparticles, there are no shifts in air, red shifts in water and blue shifts in ethanol compared with the intrinsic PL spectra of bulk GaN. The X-ray photoelectron spectroscopy (XPS) results demonstrate that the various PL spectra can be due to the different components inside the GaN nanoparticles, which not only have effect on the PL emissions, but also greatly influence the intensity of PL. This study validates that the ablation environment has a great adjustable effect on the properties of GaN nanoparticles.

Overview

The claims and statistics of this paper haven’t been checked yet.

Run the check — free, no account needed. It reads the open-access text and checks the sources it cites.

A few free checks a day · papers already verified open instantly · results are public

Integrity signals

Registry

Crossref · 10.3390/nano10030439

Cites

1 of 1 references verified0 citation errors · 0 not checkable

Statistics

Figures

Figure 1 (a) The scheme of fs-PLAL (pulsed laser ablation in liquid); the relative position between the laser’s focus and liquid level in (b) air, (c) water and ethanol.
Figure 1 (a) The scheme of fs-PLAL (pulsed laser ablation in liquid); the relative position between the laser’s focus and liquid level in (b) air, (c) water and ethanol.CC BY · PubMed Central
Figure 2 The transmission electron microscopy (TEM) images of GaN-NPs@air (A,D), GaN-NPs@water (B,E) and GaN-NPs@ethanol (C,F), the corresponding insets are their high-resolution TEM (HRTEM) images, and the corresponding size distribution are displayed in (G–I), respectively.
Figure 2 The transmission electron microscopy (TEM) images of GaN-NPs@air (A,D), GaN-NPs@water (B,E) and GaN-NPs@ethanol (C,F), the corresponding insets are their high-resolution TEM (HRTEM) images, and the corresponding size distribution are displayed in (G–I), respectively.CC BY · PubMed Central
Figure 3 The Raman spectra of GaN-NPs@air, GaN-NPs@water, GaN-NPs@ethanol and GaN film.
Figure 3 The Raman spectra of GaN-NPs@air, GaN-NPs@water, GaN-NPs@ethanol and GaN film.CC BY · PubMed Central
Figure 4 X-ray photoelectron spectroscopy (XPS) spectra of GaN-NPs: (a,b) from N1s and Ga2p of GaN-NPs@air; (c–e) are from N1s, Ga2p and Ga3d in GaN-NPs@ water; (f–h) are respectively from N1s, Ga2p and Ga3d of GaN-NPs@ethanol.
Figure 4 X-ray photoelectron spectroscopy (XPS) spectra of GaN-NPs: (a,b) from N1s and Ga2p of GaN-NPs@air; (c–e) are from N1s, Ga2p and Ga3d in GaN-NPs@ water; (f–h) are respectively from N1s, Ga2p and Ga3d of GaN-NPs@ethanol.CC BY · PubMed Central
Figure 5 The photoluminescence (PL) spectra of (a) GaN-NPs@air, (b) GaN-NPs@water and (c) GaN-NPs@ethanol with different excitation wavelength; (d) the maximum PL emissions and (e) the emissions’ intensity of three kinds of GaN-NPs.
Figure 5 The photoluminescence (PL) spectra of (a) GaN-NPs@air, (b) GaN-NPs@water and (c) GaN-NPs@ethanol with different excitation wavelength; (d) the maximum PL emissions and (e) the emissions’ intensity of three kinds of GaN-NPs.CC BY · PubMed Central
Figure 6 (a) The ultraviolet-visible (UV-Vis) absorption spectra of the three kinds of GaN-NPs; the excitation spectra of (b) GaN-NPs@air, (c) GaN-NPs@water and (d) GaN-NPs@ethanol.
Figure 6 (a) The ultraviolet-visible (UV-Vis) absorption spectra of the three kinds of GaN-NPs; the excitation spectra of (b) GaN-NPs@air, (c) GaN-NPs@water and (d) GaN-NPs@ethanol.CC BY · PubMed Central

Verification

Claims the paper makes

The claims and statistics of this paper haven’t been checked yet.

Run the check — free, no account needed. It reads the open-access text and checks the sources it cites.

A few free checks a day · papers already verified open instantly · results are public

Claims other papers make about this one

Each is checked against this paper’s own text: does it say what the citing paper says it does?

Self-check

Percentages, sums and reported differences re-computed from the paper’s own numbers.

The self-check needs the paper’s full text.

Citations

Cites

Show all 1 references

Research works printed but not linked: 23

  1. Hochella, 2019, Natural, incidental, and engineered nanomaterials and their impacts on the Earth system, Science, 363, eaau8299, 10.1126/science.aau8299 · DOI
  2. Li, 2009, Optical properties and applications of hybrid semiconductor nanomaterials, Coord. Chem. Rev., 253, 3015, 10.1016/j.ccr.2009.07.017 · DOI
  3. Zhu, 2008, The Effect of Alloying on the Bandgap Energy of Nanoscaled Semiconductor Alloys, Adv. Funct. Mater., 18, 1422, 10.1002/adfm.200700857 · DOI
  4. Mikhailova, 2019, Discovery of III-V Semiconductors: Physical Properties and Application, Semiconductors, 53, 273, 10.1134/S1063782619030126 · DOI
  5. Kanamura, M., Ohki, T., Kikkawa, T., Imanishi, K., Watanabe, K., and Joshin, K. (2012, January 21–23). Recent Progress in GaN HEMT for High-Frequency and High-Power Applications. Proceedings of the 2012 5th IEEE International Symposium on Radio-Frequency Integration Technology (RFIT), Singapore. · DOI
  6. Chen, 2017, GaN-on-Si Power Technology: Devices and Applications, IEEE Trans. Electron Devices, 64, 779, 10.1109/TED.2017.2657579 · DOI
  7. Chitara, 2010, Room-temperature gas sensors based on gallium nitride nanoparticles, Solid State Commun., 150, 2053, 10.1016/j.ssc.2010.08.007 · DOI
  8. Fan, 2014, Solution-based synthesis of III–V quantum dots and their applications in gas sensing and bio-imaging, Nano Today, 9, 69, 10.1016/j.nantod.2014.02.007 · DOI
  9. Michalet, 2005, Quantum Dots for Live Cells, in Vivo Imaging, and Diagnostics, Science, 307, 538, 10.1126/science.1104274 · DOI
  10. Vahala, 2003, Optical microcavities, Nature, 424, 839, 10.1038/nature01939 · DOI · Paper page
  11. Gross, 1999, Characteristics of undoped and magnesium doped GaN films grown by laser induced MBE, Mater. Sci. Eng. B, 59, 94, 10.1016/S0921-5107(98)00334-1 · DOI
  12. Chen, 2002, Syntheses of Soluble GaN Nanocrystals by a Solution-Phase Reaction, J. Sci. Eng., 5, 223
  13. Strite, 1994, Large-band-gap SiC, III-V nitride, and II-VI ZnSe-based semiconductor device technologies, J. Appl. Phys., 76, 1363, 10.1063/1.358463 · DOI
  14. Gyger, 2014, Quantum-confined GaN nanoparticles synthesized via liquid-ammonia-in-oil-microemulsions, Chem. Commun., 50, 2939, 10.1039/c4cc00180j · DOI
  15. You, 2018, Gallium nitride nanoparticle synthesis using nonthermal plasma with gallium vapor, Curr. Appl. Phys., 18, 1553, 10.1016/j.cap.2018.10.001 · DOI
  16. Kim, T.H., Choi, S., and Park, D.W. (2016). Thermal Plasma Synthesis of Crystalline Gallium Nitride Nanopowder from Gallium Nitrate Hydrate and Melamine. Nanomaterials, 6. · DOI
  17. Lam, 2004, Growth of β-Ga2O3 nanoparticles by pulsed laser ablation technique, Appl. Phys. A, 79, 2099, 10.1007/s00339-004-2893-6 · DOI
  18. Demirel, 2016, Synthesis of blue-shifted luminescent colloidal GaN nanocrystals through femtosecond pulsed laser ablation in organic solution, J. Nanopart. Res., 18, 128, 10.1007/s11051-016-3440-z · DOI
  19. Sanz, 2017, Formation of polymer nanoparticles by UV pulsed laser ablation of poly (bisphenol A carbonate) in liquid environment, Appl. Surf. Sci., 418, 522, 10.1016/j.apsusc.2016.11.186 · DOI
  20. Yamanaka, 2008, Phonon modes in self-assembled GaN quantum dots, J. Appl. Phys., 104, 093512, 10.1063/1.3013885 · DOI
  21. Reshchikov, 2005, Luminescence properties of defects in GaN, J. Appl. Phys., 97, 061301, 10.1063/1.1868059 · DOI
  22. Reshchikov, 2001, Analysis of the temperature and excitation intensity dependencies of photoluminescence in undoped GaN films, Phys. Rev. B, 64, 115205, 10.1103/PhysRevB.64.115205 · DOI
  23. Yang, 2000, Nature of the 2.8-eV photoluminescence band in Si-doped GaN, Phys. Rev. B, 62, 12593, 10.1103/PhysRevB.62.12593 · DOI

Cited by

Sorted by citations

See all 20

Metadata

Authors
Hao, J., Xu, S., Gao, B., & Pan, L.
Affiliations
  • Jilin University (CN)
  • College of Electronic Science and Engineering, Jilin University, Changchun 130012, China
Corresponding author
Pan, Lingyun
ORCID
Pan, Lingyun
Venue
Nanomaterials
Publisher
MDPI AG
Published
2020-02-29
Volume
10
Issue
3
Pages
439
ISSN
2079-4991 (ISSN-L)
DOI
10.3390/nano10030439
PMC
PMC7153704
OpenAlex
W3010605935
Cited by
20
References
1
Citations by year
2026: 3 · 2025: 2 · 2024: 7 · 2023: 4 · 2022: 2 · 2021: 2
FWCI
0.63
Type
journal article
Language
en
Open access
Licence
Locations
  • Nanomaterials (publishedVersion, cc-by)
  • PubMed Central (publishedVersion, cc-by)
  • PubMed (publishedVersion)
  • DOAJ (DOAJ: Directory of Open Access Journals) (submittedVersion, cc-by-sa)
Funders
  • the National Key Research and Development Program of China (2017YFB1104600)
  • National Natural Science Foundation of China (NSFC) (No. 61825502, 61590930, 61827826, 21903035)
Topics
  • Physical Sciences › Materials Science › Materials Chemistry › Laser-Ablation Synthesis of Nanoparticles
  • Physical Sciences › Physics and Astronomy › Condensed Matter Physics › GaN-based semiconductor devices and materials
  • Physical Sciences › Materials Science › Materials Chemistry › Silicon Nanostructures and Photoluminescence
Keywords
GaN nanoparticles, tunable photoluminescence, water medium, ethanol medium, red shift, blue shift, nanoparticle composition, ultraviolet optoelectronic devices

About these checks

Registry, retraction, Cites and statistics results are computed, not judged, with one exception: a printed reference that no index lists is read once by a model before it counts as a citation error. Claims are extracted by a model and kept only when their quote appears verbatim in the text; each cited source is then checked, with a model’s help, for whether it says what the claim relies on. Those verdicts can be wrong — read the claim’s quote and the cited source before relying on one.

Statistics and arithmetic are recomputed, not judged.

Confidence bands are shown only for fields calibrated on our annotated test set. None is calibrated yet, so no band is shown.

What counts as a claim ›How we measure confidence ›How we check this ›

Are you an author, or do you see a problem with this page? Request a review

How to cite

Cite CoChat for the checks on this page, and the paper for its own findings.

This page
CoChat. (2026). Citation check: PL Tunable GaN Nanoparticles Synthesis through Femtosecond Pulsed Laser Ablation in Different Environments. https://app.cochat.ai/papers/10.3390/nano10030439
The paper
Hao, J., Xu, S., Gao, B., & Pan, L. (2020). PL Tunable GaN Nanoparticles Synthesis through Femtosecond Pulsed Laser Ablation in Different Environments. Nanomaterials. https://doi.org/10.3390/nano10030439