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ZnO-Based Ultraviolet Photodetectors

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Liu, Kewei, Sakurai, Makoto, Aono, Masakazu·2010·Sensors

Abstract

Ultraviolet (UV) photodetection has drawn a great deal of attention in recent years due to a wide range of civil and military applications. Because of its wide band gap, low cost, strong radiation hardness and high chemical stability, ZnO are regarded as one of the most promising candidates for UV photodetectors. Additionally, doping in ZnO with Mg elements can adjust the bandgap largely and make it feasible to prepare UV photodetectors with different cut-off wavelengths. ZnO-based photoconductors, Schottky photodiodes, metal–semiconductor–metal photodiodes and p–n junction photodetectors have been developed. In this work, it mainly focuses on the ZnO and ZnMgO films photodetectors. We analyze the performance of ZnO-based photodetectors, discussing recent achievements, and comparing the characteristics of the various photodetector structures developed to date.

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Metadata

Authors
Liu, K., Sakurai, M., & Aono, M.
Venue
Sensors
Publisher
MDPI AG
Published
2010-09-17
Volume
10
Issue
9
Pages
8604-8634
ISSN
1424-8220 (ISSN-L)
OpenAlex
W2040306790
Cited by
726
References
0
FWCI
7.72
Type
journal article
Language
en
Open access
gold

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CoChat. (2026). Citation check: ZnO-Based Ultraviolet Photodetectors. https://app.cochat.ai/papers/10.3390/s100908604
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Liu, K., Sakurai, M., & Aono, M. (2010). ZnO-Based Ultraviolet Photodetectors. Sensors. https://doi.org/10.3390/s100908604

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