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Comparison of 600V Si, SiC and GaN Power Devices
Abstract
In this paper the DC and switching performance of 600V Si, SiC and GaN power devices using device simulation. The devices compared are Si superjunction MOSFET, Si field stop IGBT, SiC UMOSFET and GaN HEMT.
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“In fact, as SiC MOSFET devices have a blocking voltage of 600V to 1700V, they can easily deal with battery voltages from 200V to 800V in most EVs [139].”
From A Review of Bidirectional On-Board Chargers for Electric Vehicles (2021) · cites this paper as [139]
Citations
Cited by
Sorted by citations
Review of Commercial GaN Power Devices and GaN-Based Converter Design Challenges
Jones, E. A., Wang, F. F., & Costinett, D. (2016) · IEEE Journal of Emerging and Selected Topics in Power Electronics · doi:10.1109/jestpe.2016.2582685 · Cited by 1,259
A Review of Bidirectional On-Board Chargers for Electric Vehicles
Yuan, J., Dorn-Gomba, L., Callegaro, A. D., Reimers, J., & Emadi, A. (2021) · IEEE Access · doi:10.1109/access.2021.3069448 · Cited by 390
“In fact, as SiC MOSFET devices have a blocking voltage of 600V to 1700V, they can easily deal with battery voltages from 200V to 800V in most EVs [139].”
BackgroundSmart Power Devices and ICs Using GaAs and Wide and Extreme Bandgap Semiconductors
Chow, T. P., Omura, I., Higashiwaki, M., et al. (2017) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2017.2653759 · Cited by 165
“Comparison of on-state performance of 600V Si versus SiC and GaN power transistors [48].”
BackgroundSelf-citationA Review of High-Speed GaN Power Modules: State of the Art, Challenges, and Solutions
Emon, A. I., Mustafeez-ul-Hassan, Mirza, A. B., Kaplun, J., Vala, S. S., & Luo, F. (2023) · IEEE Journal of Emerging and Selected Topics in Power Electronics · doi:10.1109/jestpe.2022.3232265 · Cited by 151
“Among them, silicon carbide (SiC) and gallium nitride (GaN) have superseded other candidates with their superior material properties and relevance to the application [5], [6].”
Background820-V GaN-on-Si Quasi-Vertical p-i-n Diodes With BFOM of 2.0 GW/cm2
Khadar, R. A., Liu, C., Zhang, L., et al. (2018) · IEEE Electron Device Letters · doi:10.1109/led.2018.2793669 · Cited by 86
“This emanates from the superior properties of GaN such as higher bandgap, saturation velocity, electron mobility and critical electric field as compared to Si [2].”
Backgroundde Souza, A. F., Tofoli, F. L., & Ribeiro, Ê. R. (2021) · Energies · doi:10.3390/en14082231 · Cited by 52
Characterization of a Jet Impingement Heat Sink for Power Electronics Cooling
Klinkhamer, C., Abishek, S., Iyer, K. L. V., et al. (2022) · Thermal Science and Engineering Progress · doi:10.1016/j.tsep.2022.101408 · Cited by 39
Design and Optimization of Gate Driver Integrated Multichip 3-D GaN Power Module
Emon, A. I., Carlton, H., Harris, J., Krone, A., Hassan, M. U., Mirza, A. B., Hossain, M. M., Rashid, A. U., Chen, Y., Luo, F. L., et al. (2022) · IEEE Transactions on Transportation Electrification · doi:10.1109/tte.2022.3173585 · Cited by 39
“When compared to Si and SiC, GaN exhibits smaller gate charge and channel resistance with the same die size, for a given current and voltage level [6].”
BackgroundFailure analysis of normally-off GaN HEMTs under avalanche conditions
Martínez, P. J., Letz, S., Maset, E., & Zhao, D. (2020) · Semiconductor Science and Technology · doi:10.1088/1361-6641/ab6bad · Cited by 28
Wang, B., Dong, S., Jiang, S., He, C., Hu, J., Ye, H., & Ding, X. (2019) · Energies · doi:10.3390/en12061146 · Cited by 28
Hwang, I., Cha, H., & Seo, K.-S. (2021) · Coatings · doi:10.3390/coatings11030268 · Cited by 26
“GaN-based high electron mobility transistors have been developed for use in highfrequency amplifiers and high-voltage power switching applications owing to their high breakdown voltage, large bandgap, and high electron carrier velocity [1].”
BackgroundHigh dv/dt Noise Modeling and Reduction on Control Circuits of GaN-Based Full Bridge Inverters
Meng, W., Zhang, F., Fu, Z., & Dong, G. (2019) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2019.2903818 · Cited by 26
N-doped β-Ga2O3/Si-doped β-Ga2O3 linearly-graded p-n junction by a one-step integrated approach
Liu, C., Wu, Z., Zhai, H., et al. (2024) · Journal of Material Science and Technology · doi:10.1016/j.jmst.2024.05.023 · Cited by 24
Unstable behaviour of normally-off GaN E-HEMT under short-circuit
Martínez, P. J., Maset, E., Sanchis-Kilders, E., et al. (2018) · Semiconductor Science and Technology · doi:10.1088/1361-6641/aab078 · Cited by 20
A 650V/60A Gate Driver Integrated Wire-bondless Multichip GaN Module
Emon, A. I., Carlton, H., Harris, J., Krone, A., Hassan, M. U., Mirza, A. B., Yuan, Z., Huitink, D. R., & Luo, F. L. (2021) · IEEE International Symposium on Power Electronics for Distributed Generation Systems (PEDG) · doi:10.1109/pedg51384.2021.9494257 · Cited by 13
“SiC and GaN has exhibited superior performance compared to their Si counterparts, and now aggressively changing the paradigm by replacing Si [5-6].”
BackgroundDesign and Optimization of 650V/60A Double-Sided Cooled Multichip GaN Module
Emon, A. I., Carlton, H., Harris, J., Krone, A., Mirza, A., Hassan, M., Yuan, Z., Huitink, D., & Luo, F. (2021) · 2021 IEEE Applied Power Electronics Conference and Exposition (APEC) · doi:10.1109/apec42165.2021.9487307 · Cited by 11
Amrani, M. E., Buckley, J., Kaltsounis, T., et al. (2024) · Crystals · doi:10.3390/cryst14060553 · Cited by 11
“These factors collectively enable GaN-based devices to offer low on-resistance (Ron) and the ability to operate efficiently at high frequencies in high-voltage applications [1,2].”
BackgroundGaN smart power devices and integrated circuits
Chow, T. P., & Guo, Z. (2018) · Elsevier eBooks · doi:10.1016/b978-0-08-102306-8.00005-8 · Cited by 5
Self-citationKulkarni, V., & Kospach, A. (2024) · doi:10.1109/ecceeurope62508.2024.10751869 · Cited by 5
“…based on silicon (Si), silicon carbide (SiC) or gallium nitride (GaN), operates at high switching frequencies and generates a large amount of heat which is confined over a small surface area thus dissipating the high heat fluxes equivalent to around e.g. 1000 kW m − 2 and creating the hotspots [3].”
Polyntsev, E. S., Erofeev, E. V., & Yunusov, I. V. (2021) · Electronics · doi:10.3390/electronics10222802 · Cited by 4
An, Y., Ren, K., Yin, L., & Zhang, J. (2023) · Electronics · doi:10.3390/electronics12051087 · Cited by 5
Cai, J. (2018) · Scholarship at UWindsor (University of Windsor) · Cited by 4
Amrani, M. E., Lyu, J., Wen, X., Marcuzzi, A., Arguello, D. P., M'Qaddem, Z., Kaltsounis, T., Rammouz, H. E., Meneghesso, G., Meneghini, M., et al. (2025) · Journal of Applied Physics · doi:10.1063/5.0299842 · Cited by 3
Self-citationGate capacitance model of AlGaN/GaN high electron mobility transistor
Liu, N.-Z., Yao, R., & Geng, K. (2021) · Acta Physica Sinica · doi:10.7498/aps.70.20210700 · Cited by 3
Effect of O2 plasma surface treatment on gate leakage current in AlGaN/GaN HEMT
Liu, A.-C., Huang, Y., Lin, C.-H., et al. (2023) · International VLSI Symposium on Technology, Systems and Applications (VLSI-TSA) · doi:10.1109/vlsi-tsa/vlsi-dat57221.2023.10134028 · Cited by 3
“GaN-based AlGaN/GaN HEMTs have the potential to be used in high-power applications such as power switchgear and next-generation wireless base stations [1].”
BackgroundAmrani, M. E., Arguello, D. P., Buckley, J., et al. (2026) · Journal of Applied Physics · doi:10.1063/5.0301914 · Cited by 2
Chang, C.-Y., HSIEH, H.-F., Ho, C.-T., et al. (2025) · Microelectronics Reliability · doi:10.1016/j.microrel.2025.115692 · Cited by 2
Controller design for interleaved bidirectinal DC-DC converter with coupled inductors
Tytelmaier, K. O., Husev, O. O., Veligorskyi, O., et al. (2017) · IEEE Ukraine Conference on Electrical and Computer Engineering (UKRCON) · doi:10.1109/ukrcon.2017.8100306 · Cited by 2
Modelling and comparison of Si-MOSFET and eGaN-HEMT for power converter applications using TCAD
Newar, T., & Bhajana, V. V. S. K. (2017) · IEEE International Conference on Recent Trends in Electronics, Information & Communication Technology · doi:10.1109/rteict.2017.8256633 · Cited by 2
“Due to the material properties [2] of three-nitrite wide band materials GaN, AlN, attracts a lot of attention.”
BackgroundInfluentialMorita, M., Ishibashi, K., Takahashi, K., et al. (2022) · Japanese Journal of Applied Physics · doi:10.35848/1347-4065/ac4ad7 · Cited by 2
GaN based High Power Density PCB Design for Aerial Vehicles Motor Drive Applications
Khan, S. A., Zhou, F., Le, D., et al. (2025) · IEEE International Workshop on Integrated Power Packaging (IWIPP) · doi:10.1109/iwipp61784.2025.10971516 · Cited by 1
Amrani, M. E., Kaltsounis, T., Arguello, D. P., et al. (2025) · IEEE International Reliability Physics Symposium proceedings · doi:10.1109/irps48204.2025.10982990 · Cited by 1
“Consequently, there has been a growing interest in the development and application of GaN-based devices across various sectors, including telecommunications, automotive, and renewable energy [1], [2].”
Assembly Challenge and Solution for GaN on Si substrate
Lin, H.-C., Chen, P. L., Fan, G. T., Wang, Y. P., & Ma, B. H. (2019) · International Microsystems, Packaging, Assembly and Circuits Technology Conference · doi:10.1109/impact47228.2019.9024969 · Cited by 1
A Novel Monolithic Integration Of HEMT And Micro-LED Performing As A Photodetector
Wang, H., Gao, Y., Li, Y., et al. (2023) · China International Forum on Solid State Lighting & International Forum on Wide Bandgap Semiconductors (SSLChina: IFWS) · doi:10.1109/sslchinaifws60785.2023.10399679 · Cited by 1
“[11-13] In this paper, we used GaN-based HEMT which provides higher switching frequency and driving current as the transmitter drive device, a novel device structure of GaN-based HEMT and Micro-LED single-chip is designed by integrating the epitaxy of the driven device and the luminous device.”
MethodEvaluation of gate drive circuit effect in cascode GaN-based applications
Tan, Q., & Narayanan, E. M. S. (2021) · Bulletin of the Polish Academy of Sciences Technical Sciences · doi:10.24425/bpasts.2021.136742
Mirza, A. Y., Chen, W., & Bazzi, A. M. (2021) · IEEE Applied Power Electronics Conference and Exposition (APEC) · doi:10.1109/apec42165.2021.9487392
Structure optimization and fabrication of GaN quasi-vertical diode
Guo, H., Guo, W., Feng, Y., et al. (2021) · China International Forum on Solid State Lighting & International Forum on Wide Bandgap Semiconductors (SSLChina: IFWS) · doi:10.1109/sslchinaifws54608.2021.9675201
Yasuda, U., & Michihira, M. (2022) · Proceedings of the Annual Conference of the IEEE Industrial Electronics Society · doi:10.1109/iecon49645.2022.9968589
“In addition, to suppress the increase in switching losses, power conversion systems with switching devices based on wide bandgap semiconductors such as SiC/GaN have been studied [4]-[7].”
BackgroundModeling and Analysis of Electrical Characteristics of Symmetric Double Gate HEMT
Yuan, R., & Wang, L. (2023) · IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) · doi:10.1109/imws-amp57814.2023.10381122
“Through DC/AC analysis, the on-state and switching performance of eGaN HEMT is superior to that of Si [1].”
BackgroundDesign and Lag Compansated Control of a GaN Based Phase Shifted Full Bridge Converter
Bayram, S., Kayışlı, K., & Nasri, A. (2024) · International Conference on Renewable Energy Research and Applications (ICRERA) · doi:10.1109/icrera62673.2024.10815476
Process Optimization for Low-Leakage Quasi-Vertical GaN PiN Diode
Liu, Y., Xu, W., Xu, X., et al. (2025) · doi:10.1109/sslchinaifws69008.2025.11315017
“The development and improvement of GaN-based lateral power devices have been continuously progressing, and they are now maturely applied in various high voltage and high frequency scenarios [1].”
Avalanche stress in localized GaN epitaxial p–n diodes on 200 mm silicon substrates
Amrani, M. E., Arguello, D. P., M'Qaddem, Z., et al. (2026) · Materials Science in Semiconductor Processing · doi:10.1016/j.mssp.2026.110554
Ezza, A., Machon, D., Sonneville, C., et al. (2026) · ACS Applied Materials & Interfaces · doi:10.1021/acsami.5c25852
Design of 1 MHz Hard-Switching Half-Bridge Circuit with GaN Modules
Kamahara, T., & Minami, M. (2025) · Journal of the Japan Institute of Power Electronics · doi:10.5416/jipe.51.93
Metadata
- Authors
- Chowdhury, S., Stum, Z., Li, Z. D., Ueno, K., & Chow, T. P.
- Affiliations
- Rensselaer Polytechnic Institute (US)
- General Electric (United States) (US)
- Advance Power Device Research Association
- Corresponding author
- Chowdhury, Sauvik
- Venue
- Materials Science Forum
- Publisher
- Trans Tech Publications, Ltd.
- Published
- 2014-02-26
- Volume
- 778-780
- Pages
- 971-974
- ISSN
- 0255-5476 (ISSN-L)
- 1662-9752
- OpenAlex
- W2010403190
- Cited by
- 44
- References
- 0
- Citations by year
- 2026: 3 · 2025: 6 · 2024: 4 · 2023: 4 · 2022: 5 · 2021: 10 · 2020: 1 · 2019: 3 · 2018: 4 · 2017: 3 · 2016: 1
- FWCI
- 0.71
- Type
- journal article
- Language
- en
- Open access
- closed
- Licence
- Locations
- Materials science forum (publishedVersion)
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Silicon Carbide Semiconductor Technologies
- Physical Sciences › Physics and Astronomy › Condensed Matter Physics › GaN-based semiconductor devices and materials
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Advancements in Semiconductor Devices and Circuit Design
- Keywords
- silicon power devices, silicon carbide power devices, gallium nitride power devices, superjunction MOSFET, field-stop IGBT, GaN HEMT, DC performance, switching performance, device simulation
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