The DOI matches its Crossref record.
Comparison of 600V Si, SiC and GaN Power Devices
Abstract
In this paper the DC and switching performance of 600V Si, SiC and GaN power devices using device simulation. The devices compared are Si superjunction MOSFET, Si field stop IGBT, SiC UMOSFET and GaN HEMT.
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In the citing paper
“In fact, as SiC MOSFET devices have a blocking voltage of 600V to 1700V, they can easily deal with battery voltages from 200V to 800V in most EVs [139].”
From A Review of Bidirectional On-Board Chargers for Electric Vehicles (2021) · cites this paper as [139]
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Review of Commercial GaN Power Devices and GaN-Based Converter Design Challenges
Jones, E. A., Wang, F. F., & Costinett, D. (2016) · IEEE Journal of Emerging and Selected Topics in Power Electronics · doi:10.1109/jestpe.2016.2582685 · Cited by 1,259
A Review of Bidirectional On-Board Chargers for Electric Vehicles
Yuan, J., Dorn-Gomba, L., Callegaro, A. D., Reimers, J., & Emadi, A. (2021) · IEEE Access · doi:10.1109/access.2021.3069448 · Cited by 390
“In fact, as SiC MOSFET devices have a blocking voltage of 600V to 1700V, they can easily deal with battery voltages from 200V to 800V in most EVs [139].”
BackgroundSmart Power Devices and ICs Using GaAs and Wide and Extreme Bandgap Semiconductors
Chow, T. P., Omura, I., Higashiwaki, M., et al. (2017) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2017.2653759 · Cited by 165
“Comparison of on-state performance of 600V Si versus SiC and GaN power transistors [48].”
BackgroundSelf-citationA Review of High-Speed GaN Power Modules: State of the Art, Challenges, and Solutions
Emon, A. I., Mustafeez-ul-Hassan, Mirza, A. B., Kaplun, J., Vala, S. S., & Luo, F. (2023) · IEEE Journal of Emerging and Selected Topics in Power Electronics · doi:10.1109/jestpe.2022.3232265 · Cited by 151
“Among them, silicon carbide (SiC) and gallium nitride (GaN) have superseded other candidates with their superior material properties and relevance to the application [5], [6].”
Background820-V GaN-on-Si Quasi-Vertical p-i-n Diodes With BFOM of 2.0 GW/cm2
Khadar, R. A., Liu, C., Zhang, L., et al. (2018) · IEEE Electron Device Letters · doi:10.1109/led.2018.2793669 · Cited by 86
“This emanates from the superior properties of GaN such as higher bandgap, saturation velocity, electron mobility and critical electric field as compared to Si [2].”
Background
Metadata
- Authors
- Chowdhury, S., Stum, Z., Li, Z. D., Ueno, K., & Chow, T. P.
- Affiliations
- Rensselaer Polytechnic Institute (US)
- General Electric (United States) (US)
- Advance Power Device Research Association
- Corresponding author
- Chowdhury, Sauvik
- Venue
- Materials Science Forum
- Publisher
- Trans Tech Publications, Ltd.
- Published
- 2014-02-26
- Volume
- 778-780
- Pages
- 971-974
- ISSN
- 0255-5476 (ISSN-L)
- 1662-9752
- OpenAlex
- W2010403190
- Cited by
- 44
- References
- 0
- Citations by year
- 2026: 3 · 2025: 6 · 2024: 4 · 2023: 4 · 2022: 5 · 2021: 10 · 2020: 1 · 2019: 3 · 2018: 4 · 2017: 3 · 2016: 1
- FWCI
- 0.71
- Type
- journal article
- Language
- en
- Open access
- closed
- Licence
- Locations
- Materials science forum (publishedVersion)
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Silicon Carbide Semiconductor Technologies
- Physical Sciences › Physics and Astronomy › Condensed Matter Physics › GaN-based semiconductor devices and materials
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Advancements in Semiconductor Devices and Circuit Design
- Keywords
- silicon power devices, silicon carbide power devices, gallium nitride power devices, superjunction MOSFET, field-stop IGBT, GaN HEMT, DC performance, switching performance, device simulation
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