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Cited by 3

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Serial-Parallel IGBT Connection Method Based on Overvoltage Measurement

Streit, Lubos, Janik, Dusan, Talla, Jakub·2016·Elektronika ir Elektrotechnika
DOI 10.5755/j01.eee.22.1.14110
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Abstract

This paper deals with a novel method which allows the serial connection of Insulated Gate Bipolar Transistors (IGBTs). The different dynamic characteristics of serially connected IGBTs during turn ON and OFF cause a short-term overvoltage stress in the transistors. In contrary to the commonly used techniques, the presented method reduces additional commutation losses by actively correcting turn ON and OFF delays. The presented method uses overvoltages as measured by a peak detector. The correction circuit doesn’t require a high speed Analog-Digital converter (ADC) or high speed computation. The target power switch unit consists of two serial connected transistors with two identical parallel branches. The well-known 2-level inverter topology equipped with the power switch unit can be connected directly to the high-voltage grid. This converter topology was demanded by our industry partner for 11 MW mining machines. The paper contains a laboratory experiment conducted on a serial-parallel IGBT power switch unit with a tested output power of 1 kW.DOI: http://dx.doi.org/10.5755/j01.eee.22.1.14110

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Crossref · 10.5755/j01.eee.22.1.14110

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Figures

Fig. 1 Serial-Parallel IGBT switch.
Fig. 1 Serial-Parallel IGBT switch.CC-BY · From the PDF
Fig. 2 Functional block diagram of Serial-Parallel IGBT unit of power 1 kW.
Fig. 2 Functional block diagram of Serial-Parallel IGBT unit of power 1 kW.CC-BY · From the PDF
Fig. 3 Diagram showing the timing of peak detector overvoltage measurement and AD conversion.
Fig. 3 Diagram showing the timing of peak detector overvoltage measurement and AD conversion.CC-BY · From the PDF
Fig. 4 Master control unit implemented in Code Composer Studio 5.5.
Fig. 4 Master control unit implemented in Code Composer Studio 5.5.CC-BY · From the PDF
Fig. 5 Testing prototype of Serial-Parallel IGBT unit of power 1 kW.
Fig. 5 Testing prototype of Serial-Parallel IGBT unit of power 1 kW.CC-BY · From the PDF
Fig. 6 Turn ON overvoltage (Timebase 400 ns/div): a) transistor A delayed 100 ns; b) transistor B delayed 100 ns.
Fig. 6 Turn ON overvoltage (Timebase 400 ns/div): a) transistor A delayed 100 ns; b) transistor B delayed 100 ns.CC-BY · From the PDF
Fig. 7 Turn ON overvoltage (Timebase 10 µs/div): a) transistor A delayed 100 ns; b) transistor B delayed 100 ns.
Fig. 7 Turn ON overvoltage (Timebase 10 µs/div): a) transistor A delayed 100 ns; b) transistor B delayed 100 ns.CC-BY · From the PDF
Fig. 8 Voltage division with delay compensation (Timebase 400 ns/div): a) during turn ON; b) during turn OFF.
Fig. 8 Voltage division with delay compensation (Timebase 400 ns/div): a) during turn ON; b) during turn OFF.CC-BY · From the PDF

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Research works printed but not linked: 10

  1. G. Yao, et al. "State-feedback control of a current source inverter- based STATCOM", Elektronika ir Elektrotechnika, no. 3, pp. 17-22, 2010.
  2. D. Bortis, J. Biela, J. W. Kolar, "Active gate control for current balancing of parallel-connected IGBT modules in solid-state modulators", IEEE Trans. on Plasma Science, vol. 36, no. 5, pp. 2632-2637, 2008. [Online]. Available: http://dx.doi.org/10.1109/ TPS.2008.2003971 · DOI · Paper page
  3. D. Vinnikov, et al, "Analysis of switching conditions of IGBTs in modified sine wave qZSIs operated with different shoot-through control methods", Elektronika ir Elektrotechnika, no. 5, pp. 45-50, 2011. [Online]. Available: http://dx.doi.org/10.5755/j01.eee.111.5.354 · DOI
  4. J. W. Baek, D. W. Yoo, H. G. Kim, "High voltage switch using series-connected IGBTs with simple auxiliary circuit", IEEE Industry Applications Conf., 2000, pp. 2237-2242. [Online]. Available: http://dx.doi.org/10.1109/ias.2000.883136 · DOI
  5. C. Abbate, G. Busatto, L. Fratelli, F. Iannuzzo, B. Cascone, G. Giannini, "Series connection of high power IGBT modules for traction applications", European Conf. on Power Electronics and Applications, 2005. [Online]. Available: http://dx.doi.org/10.1109/ epe.2005.219697 · DOI
  6. C. Abbate, G. Busatto, F. Iannuzzo, "High-voltage, high-performance switch using series-connected IGBTs", IEEE Trans. Power Electronics, vol. 25, no. 9, pp. 2450-2459, 2010. [Online]. Available: http://dx.doi.org/10.1109/TPEL.2010.2049272 · DOI
  7. R. Withanage, N. Shammas, "Series connection of insulated gate bipolar transistors (IGBTs)", IEEE Trans. Power Electronics, vol. 27, no. 4, pp. 2204-2212, 2012. [Online]. Available: http://dx.doi.org/ 10.1109/TPEL.2011.2167000 · DOI
  8. Ting Lu, Zhengming Zhao, Shiqi Ji, Hualong Yu, Liqiang Yuan, "Parameter design of voltage balancing circuit for series connected HV-IGBTs", 7th Int. Power Electronics and Motion Control Conf. (IPEMC), 2012, pp. 1502-1507.
  9. Z. Dongsheng, D. H. Braun, "A practical series connection technique for multiple IGBT devices", IEEE 32nd Annu. Power Electronics Specialists Conf., (PESC 2001), 2001, pp. 2151-2155. [Online]. Available: http://dx.doi.org/10.1109/pesc.2001.954438 · DOI
  10. P. Spanik, et al., "Efficiency increase of switched mode power supply through optimization of transistor's commutation mode", Elektronika ir Elektrotechnika, no. 9, pp. 49-52, 2010.

Cited by

Metadata

Authors
Streit, L., Janik, D., & Talla, J.
Venue
Elektronika ir Elektrotechnika
Publisher
Kaunas University of Technology (KTU)
Published
2016-02-05
Volume
22
Issue
1
Pages
53-56
ISSN
  • 2029-5731
  • 1392-1215
DOI
10.5755/j01.eee.22.1.14110
Cited by
3
References
0

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