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Material science and device physics in SiC technology for high-voltage power devices
Open accessAbstract
Power semiconductor devices are key components in power conversion systems. Silicon carbide (SiC) has received increasing attention as a wide-bandgap semiconductor suitable for high-voltage and low-loss power devices. Through recent progress in the crystal growth and process technology of SiC, the production of medium-voltage (600–1700 V) SiC Schottky barrier diodes (SBDs) and power metal–oxide–semiconductor field-effect transistors (MOSFETs) has started. However, basic understanding of the material properties, defect electronics, and the reliability of SiC devices is still poor. In this review paper, the features and present status of SiC power devices are briefly described. Then, several important aspects of the material science and device physics of SiC, such as impurity doping, extended and point defects, and the impact of such defects on device performance and reliability, are reviewed. Fundamental issues regarding SiC SBDs and power MOSFETs are also discussed.
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“To address these challenges, Wide-Bandgap (WBG) semiconductors, including silicon carbide (SiC) and gallium nitride (GaN), have emerged as materials that enable high-voltage, high-temperature, and high-speed switching owing to their Wide-Bandgap, nearly tenfold higher critical electric field, and superior thermal conductivity [1,2].”
From Thermal Management of Wide-Bandgap Power Semiconductors: Strategies and Challenges in SiC and GaN Power Devices (2025) · cites this paper as [2]
Experimental — accuracy not yet measuredThe source backs part of the claim, not all of it — or backs it for a different population, condition or comparison.
In the citing paper
“Accordingly, WBG semiconductors are positioned to overcome key constraints of Si technologies in electric vehicles, aerospace, and renewable energy [2,3].”
From Thermal Management of Wide-Bandgap Power Semiconductors: Strategies and Challenges in SiC and GaN Power Devices (2025) · cites this paper as [2]
Experimental — accuracy not yet measuredThe source backs part of the claim, not all of it — or backs it for a different population, condition or comparison.
In the citing paper
“SiC and GaN can operate under high-voltage and high-temperature conditions thanks to their Wide-Bandgaps (2.9-3.4 eV) and critical electric field strengths (2.2-4 MV cm -1 ), outperforming conventional Si in these regimes [2-5].”
From Thermal Management of Wide-Bandgap Power Semiconductors: Strategies and Challenges in SiC and GaN Power Devices (2025) · cites this paper as [2]
Experimental — accuracy not yet measuredThe source backs part of the claim, not all of it — or backs it for a different population, condition or comparison.
In the citing paper
“SiC exhibits high thermal conductivity (3.3-4.9 W cm -1 K -1 ; approximately 330-490 W m -1 K -1 ), enabling superior heat removal.”
From Thermal Management of Wide-Bandgap Power Semiconductors: Strategies and Challenges in SiC and GaN Power Devices (2025) · cites this paper as [2]
Experimental — accuracy not yet measuredThe source backs part of the claim, not all of it — or backs it for a different population, condition or comparison.
In the citing paper
“For substrates, SiC (in GaNon-SiC) offers a significant thermal advantage, exhibiting high thermal conductivity of 3.3-4.9 W cm -1 K -1 (approximately 330-490 W m -1 K -1 ).”
From Thermal Management of Wide-Bandgap Power Semiconductors: Strategies and Challenges in SiC and GaN Power Devices (2025) · cites this paper as [2]
Experimental — accuracy not yet measured
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In the citing paper
“Among WBG materials, GaN poses greater thermalmanagement challenges than SiC due to its relatively low thermal conductivity [1,2,29].”
From Thermal Management of Wide-Bandgap Power Semiconductors: Strategies and Challenges in SiC and GaN Power Devices (2025) · cites this paper as [2]
Experimental — accuracy not yet measuredThe source backs part of the claim, not all of it — or backs it for a different population, condition or comparison.
In the citing paper
“While the advantages of WBG semiconductors such as SiC and GaN are well established, ensuring their long-term reliability and accurately forecasting their operational lifespan remain critical challenges [1,2,59].”
From Thermal Management of Wide-Bandgap Power Semiconductors: Strategies and Challenges in SiC and GaN Power Devices (2025) · cites this paper as [2]
Experimental — accuracy not yet measuredThe source backs part of the claim, not all of it — or backs it for a different population, condition or comparison.
In the citing paper
“while deep-level point defects (such as the Z1/2 and EH6/7 centers) act as carrier recombination centers that shorten carrier lifetime [2].”
From Thermal Management of Wide-Bandgap Power Semiconductors: Strategies and Challenges in SiC and GaN Power Devices (2025) · cites this paper as [2]
Experimental — accuracy not yet measuredThe source backs part of the claim, not all of it — or backs it for a different population, condition or comparison.
In the citing paper
“In SiC, BPDs and threading edge dislocations (TEDs) shorten carrier lifetime and raise leakage current [2], while gate-oxide traps and V th instability are additional concerns [2,64].”
From Thermal Management of Wide-Bandgap Power Semiconductors: Strategies and Challenges in SiC and GaN Power Devices (2025) · cites this paper as [2]
Experimental — accuracy not yet measuredThe cited source says what the claim attributes to it.
In the citing paper
“Of these, channel and JFET resistances dominate at lower voltage ratings, whereas the drift layer becomes the main contributor at higher voltages (above 3 kV) [2].”
From Thermal Management of Wide-Bandgap Power Semiconductors: Strategies and Challenges in SiC and GaN Power Devices (2025) · cites this paper as [2]
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“GaN's thermal conductivity decreases with temperature [2,6].”
From Thermal Management of Wide-Bandgap Power Semiconductors: Strategies and Challenges in SiC and GaN Power Devices (2025) · cites this paper as [2]
Experimental — accuracy not yet measuredThe check wasn’t confident either way, so it gives no verdict — never disputed.
In the citing paper
“whereas GaN faces challenges in thermal dissipation and reliability due to its lower thermal conductivity and heterojunction architecture [1,2].”
From Thermal Management of Wide-Bandgap Power Semiconductors: Strategies and Challenges in SiC and GaN Power Devices (2025) · cites this paper as [2]
Experimental — accuracy not yet measuredThe check wasn’t confident either way, so it gives no verdict — never disputed.
In the citing paper
“Silver-sintered joints provide excellent electrical/thermal conductivity and high-temperature stability but face electromigration (EM) and cost challenges [2,30-35].”
From Thermal Management of Wide-Bandgap Power Semiconductors: Strategies and Challenges in SiC and GaN Power Devices (2025) · cites this paper as [2]
Experimental — accuracy not yet measuredThe check wasn’t confident either way, so it gives no verdict — never disputed.
In the citing paper
“GaN-on-Diamond can further reduce channel temperature owing to the diamond substrate's thermal conductivity exceeding 700 W m -1 K -1 , thereby enhancing both performance and lifetime [1,2,28,29].”
From Thermal Management of Wide-Bandgap Power Semiconductors: Strategies and Challenges in SiC and GaN Power Devices (2025) · cites this paper as [2]
Experimental — accuracy not yet measuredThe check wasn’t confident either way, so it gives no verdict — never disputed.
In the citing paper
“Copper-sintered joints offer comparable performance with improved EM resistance, though oxidation control and process windows remain nontrivial [1-3,31,36-38].”
From Thermal Management of Wide-Bandgap Power Semiconductors: Strategies and Challenges in SiC and GaN Power Devices (2025) · cites this paper as [2]
Experimental — accuracy not yet measuredThe check wasn’t confident either way, so it gives no verdict — never disputed.
In the citing paper
“In parallel, silver and copper microparticle sintering and transient liquid-phase bonding are recognized as reliable assembly approaches that combine excellent electrical/thermal conductivity with high-temperature stability [2,3,30] (Figure 2).”
From Thermal Management of Wide-Bandgap Power Semiconductors: Strategies and Challenges in SiC and GaN Power Devices (2025) · cites this paper as [2]
Experimental — accuracy not yet measuredThe check wasn’t confident either way, so it gives no verdict — never disputed.
In the citing paper
“TBR is a significant component of the overall thermal resistance in GaN-on-SiC, where AlN nucleation and defect layers elevate interface resistance.”
From Thermal Management of Wide-Bandgap Power Semiconductors: Strategies and Challenges in SiC and GaN Power Devices (2025) · cites this paper as [2]
Experimental — accuracy not yet measuredThe check wasn’t confident either way, so it gives no verdict — never disputed.
In the citing paper
“To mitigate TBR, surface-activated bonding (SAB) has emerged as a promising interface technology, enabling high-quality interfaces and thermal boundary conductance (TBC) values approaching 230 MW m -2 K -1 [1,2,39].”
From Thermal Management of Wide-Bandgap Power Semiconductors: Strategies and Challenges in SiC and GaN Power Devices (2025) · cites this paper as [2]
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Caldwell, J. D., Giles, A. J., Lepage, D., Carrier, D., Moumanis, K., Hull, B., Stahlbush, R. E., Myers‐Ward, R. L., Dubowski, J. J., & Verhaegen, M. (2013) · Applied Physics Letters · doi:10.1063/1.4810909 · Cited by 16
Electron localization and noise in silicon carbide inversion layers
Ouisse, T. (1996) · Philosophical Magazine B · doi:10.1080/01418639609365828 · Cited by 16
Defect Control in Growth and Processing of 4H-SiC for Power Device Applications
Kimoto, T., Feng, G., Hiyoshi, T., Kawahara, K., Noborio, M., & Suda, J. (2010) · Materials science forum · doi:10.4028/www.scientific.net/msf.645-648.645 · Cited by 14
Self-citationNature of Transition Layers at the SiO2/SiC Interface | NIST
Zheleva, T. S., Lelis, A. J., Duscher, G. J., Liu, F., Levin, I., & Das, M. K. (2008) · Applied Physics Letters · Cited by 14
Charge Trapping in Sic Power MOSFETs and its Consequences for Robust Reliability Testing
Green, R., Lelis, A. J., & Habersat, D. B. (2012) · Materials science forum · doi:10.4028/www.scientific.net/msf.717-720.1085 · Cited by 13
Katsuno, M., Nakabayashi, M., Fujimoto, T., Ohtani, N., Yashiro, H., Tsuge, H., Aigo, T., Hoshino, T. J., & Tatsumi, K. (2008) · Materials science forum · doi:10.4028/www.scientific.net/msf.600-603.341 · Cited by 12
Development of 4H-SiC MOSFETs with Phosphorus-Doped Gate Oxide
Okamoto, D., Yano, H., Hatayama, T., & Fuyuki, T. (2012) · Materials science forum · doi:10.4028/www.scientific.net/msf.717-720.733 · Cited by 12
Tsuchida, H., Kamata, I., Miyanagi, T., Nakamura, T., Nakayama, K., Ishii, R., & Sugawara, Y. (2006) · Materials science forum · doi:10.4028/www.scientific.net/msf.527-529.231 · Cited by 11
Progress and future challenges of silicon carbide devices for integrated circuits
Kimoto, T. (2014) · IEEE Custom Integrated Circuits Conference (CICC) · doi:10.1109/cicc.2014.6946035 · Cited by 11
Self-citationDecay curve analyses in carrier lifetime measurements of p- and n-type 4H-SiC epilayers
Hayashi, T., Okuda, T., Suda, J., & Kimoto, T. (2014) · Japanese Journal of Applied Physics · doi:10.7567/jjap.53.111301 · Cited by 11
Self-citationAbnormal Out-Diffusion of Epitaxially Doped Boron in 4H–SiC Caused by Implantation and Annealing
Negoro, Y., Kimoto, T., Matsunami, H., & Pensl, G. (2007) · Japanese Journal of Applied Physics · doi:10.1143/jjap.46.5053 · Cited by 11
Self-citationComparative study of 4H‐SiC and 2H‐GaN MOS capacitors and FETs
Chow, T. P., Naik, H., & Li, Z. (2009) · physica status solidi (a) · doi:10.1002/pssa.200925125 · Cited by 11
Characterization of SiC Epitaxial Wafers by Photoluminescence under Deep UV Excitation
Tajima, M., Tanaka, M. N., & Hoshino, N. (2002) · Materials science forum · doi:10.4028/www.scientific.net/msf.389-393.597 · Cited by 11
Optical Properties of SiC: 1997–2002
Choyke, W. J., & Devaty, R. P. (2004) · Advanced texts in physics · doi:10.1007/978-3-642-18870-1_17 · Cited by 10
(Invited) Toward the Reduction of Performance-Limiting Defects in SiC Epitaxial Substrates
Ohtani, N. (2011) · ECS Transactions · doi:10.1149/1.3631502 · Cited by 10
Phosphorus-Related Centers in SiC
Laube, M., Schmid, F., Semmelroth, K., Pensl, G., Devaty, R. P., Choyke, W. J., Wagner, G., & Maier, M. (2004) · Advanced texts in physics · doi:10.1007/978-3-642-18870-1_20 · Cited by 7
Mitsubishi Electric Corporation
(2020) · Journal of Life Cycle Assessment Japan · doi:10.3370/lca.16.254 · Cited by 7
Impact of conduction type and doping density on thermal oxidation rate of SiC(0001)
Kobayashi, T., Suda, J., & Kimoto, T. (2014) · Applied Physics Express · doi:10.7567/apex.7.121301 · Cited by 6
Self-citationPalacios, T., Matioli, E., Myers, R., Rajan, S., & Wang, H. (2016) · physica status solidi (a) · doi:10.1002/pssa.201670627 · Cited by 6
Ishii, R., Miyanagi, T., Kamata, I., Tsuchida, H., Nakayama, K., & Sugawara, Y. (2007) · Materials science forum · doi:10.4028/www.scientific.net/msf.556-557.251 · Cited by 5
Silicon Carbide and Related Materials 2013
Okumura, H., Harima, H., Kimoto, T., Yoshimoto, M., Watanabe, H., Hatayama, T., Matsuura, H., Funaki, T., & Sano, Y. (2014) · Trans Tech Publications Ltd. eBooks · doi:10.4028/b-ve1nzw · Cited by 5
Self-citationMönch, W. (2004) · Advanced texts in physics · doi:10.1007/978-3-642-18870-1_13 · Cited by 4
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Cited by
Sorted by citations
Wide-bandgap semiconductor materials: For their full bloom †
Fujita, S. (2015) · Japanese Journal of Applied Physics · doi:10.7567/jjap.54.030101 · Cited by 382
Defect engineering in SiC technology for high-voltage power devices
Kimoto, T., & Watanabe, H. (2020) · Applied Physics Express · doi:10.35848/1882-0786/abc787 · Cited by 369
Self-citationSiCILIA—Silicon Carbide Detectors for Intense Luminosity Investigations and Applications
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Multidimensional device architectures for efficient power electronics
Zhang, Y., Udrea, F., & Wang, H. (2022) · Nature Electronics · doi:10.1038/s41928-022-00860-5 · Cited by 236
Insulating materials for realising carbon neutrality: Opportunities, remaining issues and challenges
Li, C., Yang, Y., Xu, G., Zhou, Y., Jia, M., Zhong, S., Gao, Y., Park, C., Liu, Q., Wang, Y., et al. (2022) · High Voltage · doi:10.1049/hve2.12232 · Cited by 235
Metadata
- Authors
- Kimoto, T.
- Affiliations
- Kyoto University (JP)
- Corresponding author
- Kimoto, Tsunenobu
- ORCID
- Kimoto, Tsunenobu
- Venue
- Japanese Journal of Applied Physics
- Publisher
- IOP Publishing
- Published
- 2015-03-23
- Volume
- 54
- Issue
- 4
- Pages
- 040103
- ISSN
- 0021-4922 (ISSN-L)
- 1347-4065
- OpenAlex
- W2092874501
- Cited by
- 1,176
- References
- 304
- Citations by year
- 2026: 112 · 2025: 129 · 2024: 132 · 2023: 104 · 2022: 113 · 2021: 115 · 2020: 104 · 2019: 116 · 2018: 109 · 2017: 76 · 2016: 51 · 2015: 14
- FWCI
- 40.18
- Type
- journal article
- Language
- en
- Open access
- bronze
- doi.org
- Licence
- Locations
- Japanese Journal of Applied Physics (publishedVersion)
- Funders
- Kwansei Gakuin University
- Soochow University
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Silicon Carbide Semiconductor Technologies
- Physical Sciences › Physics and Astronomy › Condensed Matter Physics › GaN-based semiconductor devices and materials
- Physical Sciences › Materials Science › Electronic, Optical and Magnetic Materials › Ga2O3 and related materials
- Keywords
- silicon carbide, wide bandgap semiconductors, high-voltage power devices, Schottky diodes, SiC MOSFET, impurity doping, point defects, extended defects, device reliability, power semiconductor devices
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