Material Science and Device Physics in SiC Technology for High-Voltage Power Devices

Kimoto, Tsunenobu

doi:10.7567/jjap.54.040103

Cited by 1,176Silicon Carbide Semiconductor TechnologiesGaN-based semiconductor devices and materialsGa2O3 and related materials

Material Science and Device Physics in SiC Technology for High-Voltage Power Devices

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Kimoto, Tsunenobu·2015·Japanese Journal of Applied Physics

DOI 10.7567/jjap.54.040103

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Abstract

Power semiconductor devices are key components in power conversion systems. Silicon carbide (SiC) has received increasing attention as a wide-bandgap semiconductor suitable for high-voltage and low-loss power devices. Through recent progress in the crystal growth and process technology of SiC, the production of medium-voltage (600–1700 V) SiC Schottky barrier diodes (SBDs) and power metal–oxide–semiconductor field-effect transistors (MOSFETs) has started. However, basic understanding of the material properties, defect electronics, and the reliability of SiC devices is still poor. In this review paper, the features and present status of SiC power devices are briefly described. Then, several important aspects of the material science and device physics of SiC, such as impurity doping, extended and point defects, and the impact of such defects on device performance and reliability, are reviewed. Fundamental issues regarding SiC SBDs and power MOSFETs are also discussed.

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Wide-bandgap semiconductors, including SiC and GaN, enable high-voltage, high-temperature, and high-speed switching owing to their wide bandgap, nearly tenfold higher critical electric field, and superior thermal conductivity.
“To address these challenges, Wide-Bandgap (WBG) semiconductors, including silicon carbide (SiC) and gallium nitride (GaN), have emerged as materials that enable high-voltage, high-temperature, and high-speed switching owing to their Wide-Bandgap, nearly tenfold higher critical electric field, and superior thermal conductivity [1,2].”
From Thermal Management of Wide-Bandgap Power Semiconductors: Strategies and Challenges in SiC and GaN Power Devices (2025) · cites this paper as [2]
The Introduction identifies both SiC and GaN as wide-bandgap semiconductors, but the detailed device-property evidence concerns SiC. Table I in §2 compares SiC’s breakdown field and thermal conductivity with silicon’s, and §4 describes an approximately 8–10-fold higher breakdown field for 4H- and 6H-SiC. The source does not establish those quantitative and thermal properties, or high-voltage and high-temperature switching, for GaN; it instead describes GaN lateral switches as promising for relatively low-voltage applications. (LLM, conf=0.87)
Experimental — accuracy not yet measured
Wide-bandgap semiconductors are positioned to overcome key constraints of Si technologies in electric vehicles, aerospace, and renewable energy.
“Accordingly, WBG semiconductors are positioned to overcome key constraints of Si technologies in electric vehicles, aerospace, and renewable energy [2,3].”
From Thermal Management of Wide-Bandgap Power Semiconductors: Strategies and Challenges in SiC and GaN Power Devices (2025) · cites this paper as [2]
The Introduction (page not available) says Si technology is mature and difficult to improve substantially, while identifying electric and hybrid vehicles as applications for power devices. The Introduction and §2 describe advantages of wide-bandgap SiC for high-voltage, low-loss devices. Our copy does not specifically connect those advantages to aerospace or renewable-energy applications, so the full list of settings is not supported by this source. (LLM, conf=0.86)
Experimental — accuracy not yet measured
SiC and GaN can operate under high-voltage and high-temperature conditions thanks to their wide bandgaps (2.9-3.4 eV) and critical electric field strengths (2.2-4 MV cm-1), outperforming conventional Si in these regimes.
“SiC and GaN can operate under high-voltage and high-temperature conditions thanks to their Wide-Bandgaps (2.9-3.4 eV) and critical electric field strengths (2.2-4 MV cm -1 ), outperforming conventional Si in these regimes [2-5].”
From Thermal Management of Wide-Bandgap Power Semiconductors: Strategies and Challenges in SiC and GaN Power Devices (2025) · cites this paper as [2]
The Introduction identifies both SiC and GaN as wide-bandgap semiconductors, while §2 says SiC devices operate at high temperatures and §4 reports higher breakdown-field strengths for SiC than for Si. The paper gives SiC bandgaps of 3.02 and 3.26 eV, but the cited passages do not establish the claimed 2.9–3.4 eV and 2.2–4 MV cm⁻¹ ranges for both materials or GaN’s high-temperature operation. No page numbers are available in our copy. (LLM, conf=0.86)
Experimental — accuracy not yet measured
SiC exhibits high thermal conductivity (3.3-4.9 W cm-1 K-1; approximately 330-490 W m-1 K-1), enabling superior heat removal.
“SiC exhibits high thermal conductivity (3.3-4.9 W cm -1 K -1 ; approximately 330-490 W m -1 K -1 ), enabling superior heat removal.”
From Thermal Management of Wide-Bandgap Power Semiconductors: Strategies and Challenges in SiC and GaN Power Devices (2025) · cites this paper as [2]
The Introduction states that SiC has high thermal conductivity. Section 2 says SiC devices can avoid bulky cooling units, but attributes that advantage to their wide bandgap and chemical stability rather than thermal conductivity. The passages do not give the claimed 3.3–4.9 W cm⁻¹ K⁻¹ range. (LLM, conf=0.86)
Experimental — accuracy not yet measured
SiC in GaN-on-SiC offers a significant thermal advantage, exhibiting high thermal conductivity of 3.3-4.9 W cm-1 K-1 (approximately 330-490 W m-1 K-1).
“For substrates, SiC (in GaNon-SiC) offers a significant thermal advantage, exhibiting high thermal conductivity of 3.3-4.9 W cm -1 K -1 (approximately 330-490 W m -1 K -1 ).”
From Thermal Management of Wide-Bandgap Power Semiconductors: Strategies and Challenges in SiC and GaN Power Devices (2025) · cites this paper as [2]
The Introduction describes SiC as having high thermal conductivity and says its conductivity is about three times that of silicon. The passages from our copy do not give the claimed 3.3–4.9 W cm⁻¹ K⁻¹ range or establish a thermal advantage specifically for GaN-on-SiC substrates. (LLM, conf=0.85)
Experimental — accuracy not yet measured

Among wide-bandgap materials, GaN poses greater thermal-management challenges than SiC due to its relatively low thermal conductivity.
“Among WBG materials, GaN poses greater thermalmanagement challenges than SiC due to its relatively low thermal conductivity [1,2,29].”
From Thermal Management of Wide-Bandgap Power Semiconductors: Strategies and Challenges in SiC and GaN Power Devices (2025) · cites this paper as [2]
The Introduction (page not provided) identifies SiC and GaN as wide-bandgap semiconductors and describes SiC as having high thermal conductivity. It does not compare GaN’s thermal conductivity with SiC’s or say that GaN consequently poses greater thermal-management challenges. (LLM, conf=0.84)
Experimental — accuracy not yet measured
Ensuring long-term reliability and accurately forecasting operational lifespan of WBG semiconductors such as SiC and GaN remain critical challenges.
“While the advantages of WBG semiconductors such as SiC and GaN are well established, ensuring their long-term reliability and accurately forecasting their operational lifespan remain critical challenges [1,2,59].”
From Thermal Management of Wide-Bandgap Power Semiconductors: Strategies and Challenges in SiC and GaN Power Devices (2025) · cites this paper as [2]
The Introduction identifies SiC and GaN as wide-bandgap semiconductors and says their device reliability depends on advances in growth and device technologies. Section 6.4 describes unresolved questions about SiC gate-oxide reliability. The paper does not identify accurate forecasting of operational lifespan as a challenge for either material; its discussion of carrier lifetime concerns a different measure. (LLM, conf=0.88)
Experimental — accuracy not yet measured
Deep-level point defects such as the Z1/2 and EH6/7 centers act as carrier recombination centers that shorten carrier lifetime.
“while deep-level point defects (such as the Z1/2 and EH6/7 centers) act as carrier recombination centers that shorten carrier lifetime [2].”
From Thermal Management of Wide-Bandgap Power Semiconductors: Strategies and Challenges in SiC and GaN Power Devices (2025) · cites this paper as [2]
Section 7.2 identifies Z1/2 as a major carrier-lifetime killer in n-type 4H-SiC and attributes shorter lifetime to recombination through that center. Sections 6.5 and 7.2 identify EH6/7 as a deep level associated with carbon vacancies, but do not establish that EH6/7 itself acts as a recombination center that shortens carrier lifetime. (LLM, conf=0.84)
Experimental — accuracy not yet measured
In SiC, basal plane dislocations and threading edge dislocations shorten carrier lifetime and raise leakage current, while gate-oxide traps and threshold voltage instability are additional concerns.
“In SiC, BPDs and threading edge dislocations (TEDs) shorten carrier lifetime and raise leakage current [2], while gate-oxide traps and V th instability are additional concerns [2,64].”
From Thermal Management of Wide-Bandgap Power Semiconductors: Strategies and Challenges in SiC and GaN Power Devices (2025) · cites this paper as [2]
Sections 6.4–6.5 say TEDs can locally reduce carrier lifetime and add a small leakage-current component; BPDs can trigger stacking faults that reduce lifetime and create leakage paths in bipolar devices after carrier injection. The claim omits those conditions and overstates TEDs’ device-level effect: §6.4 says they are not generally detrimental at their current densities. Section 9.3 discusses electron trapping at SiC MOS interface states, and §10 identifies threshold-voltage instability as an important issue but says the review omits it. Page numbers are unavailable in our copy. (LLM, conf=0.88)
Experimental — accuracy not yet measured
In SiC MOSFETs, channel and JFET resistances dominate at lower voltage ratings, whereas the drift layer becomes the main contributor at higher voltages above 3 kV.
“Of these, channel and JFET resistances dominate at lower voltage ratings, whereas the drift layer becomes the main contributor at higher voltages (above 3 kV) [2].”
From Thermal Management of Wide-Bandgap Power Semiconductors: Strategies and Challenges in SiC and GaN Power Devices (2025) · cites this paper as [2]
GaN's thermal conductivity decreases with temperature.
“GaN's thermal conductivity decreases with temperature [2,6].”
From Thermal Management of Wide-Bandgap Power Semiconductors: Strategies and Challenges in SiC and GaN Power Devices (2025) · cites this paper as [2]
The Introduction mentions GaN as a wide-bandgap semiconductor, but does not discuss its thermal conductivity. Searches for GaN thermal conductivity and its temperature dependence found no passage in our copy addressing the claimed decrease. (LLM, conf=0.73)
Experimental — accuracy not yet measured
GaN faces challenges in thermal dissipation and reliability due to its lower thermal conductivity and heterojunction architecture.
“whereas GaN faces challenges in thermal dissipation and reliability due to its lower thermal conductivity and heterojunction architecture [1,2].”
From Thermal Management of Wide-Bandgap Power Semiconductors: Strategies and Challenges in SiC and GaN Power Devices (2025) · cites this paper as [2]
The Introduction (page unavailable) says SiC has high thermal conductivity and describes GaN devices grown heteroepitaxially on silicon. It also says GaN device reliability will depend on technological advances, but does not compare GaN’s thermal conductivity with SiC’s or attribute thermal-dissipation and reliability challenges to a heterojunction architecture. Searches for those terms found no passage establishing the claimed causes. (LLM, conf=0.76)
Experimental — accuracy not yet measured
Silver-sintered joints provide excellent electrical and thermal conductivity and high-temperature stability but face electromigration and cost challenges.
“Silver-sintered joints provide excellent electrical/thermal conductivity and high-temperature stability but face electromigration (EM) and cost challenges [2,30-35].”
From Thermal Management of Wide-Bandgap Power Semiconductors: Strategies and Challenges in SiC and GaN Power Devices (2025) · cites this paper as [2]
Section 1 discusses the thermal conductivity of SiC, and Section 2 discusses high-temperature SiC devices and packaging challenges. Neither passage addresses silver-sintered joints or their conductivity, stability, electromigration, or cost; searches for silver sintering and those properties found no relevant passage in our copy. (LLM, conf=0.72)
Experimental — accuracy not yet measured
GaN-on-Diamond can further reduce channel temperature owing to the diamond substrate's thermal conductivity exceeding 700 W m-1 K-1, thereby enhancing both performance and lifetime.
“GaN-on-Diamond can further reduce channel temperature owing to the diamond substrate's thermal conductivity exceeding 700 W m -1 K -1 , thereby enhancing both performance and lifetime [1,2,28,29].”
From Thermal Management of Wide-Bandgap Power Semiconductors: Strategies and Challenges in SiC and GaN Power Devices (2025) · cites this paper as [2]
The Introduction mentions GaN devices but does not discuss GaN-on-diamond. Searches for GaN-on-diamond, a diamond substrate, thermal conductivity above 700 W m−1 K−1, and reduced channel temperature found no passage addressing the claimed performance or lifetime benefits. Section 7.2 discusses carrier lifetime in SiC, a different issue. (LLM, conf=0.75)
Experimental — accuracy not yet measured
Copper-sintered joints offer comparable performance with improved electromigration resistance, though oxidation control and process windows remain nontrivial.
“Copper-sintered joints offer comparable performance with improved EM resistance, though oxidation control and process windows remain nontrivial [1-3,31,36-38].”
From Thermal Management of Wide-Bandgap Power Semiconductors: Strategies and Challenges in SiC and GaN Power Devices (2025) · cites this paper as [2]
The passages from §9.1 discuss oxidation of SiC MOS structures, not copper-sintered joints. Searches for copper-sintered joints and electromigration found no passage addressing joint performance, electromigration resistance, oxidation control, or process windows. (LLM, conf=0.77)
Experimental — accuracy not yet measured
Silver and copper microparticle sintering and transient liquid-phase bonding are reliable assembly approaches that combine excellent electrical and thermal conductivity with high-temperature stability.
“In parallel, silver and copper microparticle sintering and transient liquid-phase bonding are recognized as reliable assembly approaches that combine excellent electrical/thermal conductivity with high-temperature stability [2,3,30] (Figure 2).”
From Thermal Management of Wide-Bandgap Power Semiconductors: Strategies and Challenges in SiC and GaN Power Devices (2025) · cites this paper as [2]
Section 2, “Features of SiC power devices” (page not provided), discusses high-temperature operation of SiC devices and notes that packaging remains an issue. Our copy does not address whether silver or copper microparticle sintering or transient liquid-phase bonding are reliable assembly methods with the claimed conductivity and stability (searched: sintering, transient liquid-phase bonding, die attach, and thermal conductivity). (LLM, conf=0.77)
Experimental — accuracy not yet measured
Thermal boundary resistance is a significant component of the overall thermal resistance in GaN-on-SiC, where AlN nucleation and defect layers elevate interface resistance.
“TBR is a significant component of the overall thermal resistance in GaN-on-SiC, where AlN nucleation and defect layers elevate interface resistance.”
From Thermal Management of Wide-Bandgap Power Semiconductors: Strategies and Challenges in SiC and GaN Power Devices (2025) · cites this paper as [2]
The passages on SiC MOS interfaces (section 9.1; page unavailable) discuss electrical interface-state density, not thermal boundary resistance. Searches for GaN-on-SiC, AlN nucleation layers, and thermal interface resistance found no passage in our copy addressing the claim. (LLM, conf=0.77)
Experimental — accuracy not yet measured
Surface-activated bonding enables high-quality interfaces and thermal boundary conductance values approaching 230 MW m-2 K-1.
“To mitigate TBR, surface-activated bonding (SAB) has emerged as a promising interface technology, enabling high-quality interfaces and thermal boundary conductance (TBC) values approaching 230 MW m -2 K -1 [1,2,39].”
From Thermal Management of Wide-Bandgap Power Semiconductors: Strategies and Challenges in SiC and GaN Power Devices (2025) · cites this paper as [2]
Section 9.1 discusses SiC oxide interfaces and nitridation, while section 8.1 discusses Schottky contacts. Searches of our copy for surface-activated bonding and for thermal boundary conductance near 230 MW m⁻² K⁻¹ found no passage addressing either point. (LLM, conf=0.76)
Experimental — accuracy not yet measured

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High-voltage 6H-SiC p-n junction diodes
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Anomalously anisotropic channel mobility on trench sidewalls in 4H-SiC trench-gate metal-oxide-semiconductor field-effect transistors fabricated on 8° off substrates
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Whole-Wafer Mapping of Dislocations in 4H-SiC Epitaxy
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On the nature of ion implantation induced dislocation loops in 4H-silicon carbide
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Authors: Kimoto, T.
Affiliations: Kyoto University (JP)
Corresponding author: Kimoto, Tsunenobu
ORCID: Kimoto, Tsunenobu
Venue: Japanese Journal of Applied Physics
Publisher: IOP Publishing
Published: 2015-03-23
Volume: 54
Issue: 4
Pages: 040103
ISSN: 0021-4922 (ISSN-L)
1347-4065
DOI: 10.7567/jjap.54.040103
OpenAlex: W2092874501
Cited by: 1,176
References: 304
Citations by year: 2026: 112 · 2025: 129 · 2024: 132 · 2023: 104 · 2022: 113 · 2021: 115 · 2020: 104 · 2019: 116 · 2018: 109 · 2017: 76 · 2016: 51 · 2015: 14 · 2013: 1
FWCI: 40.18
Type: journal article
Language: en
Open access: bronze
doi.org
Licence: publishingsupport.iopscience.iop.org/iop-standard/v1 (vor)
iopscience.iop.org/info/page/text-and-data-mining (tdm)
Locations: Japanese Journal of Applied Physics (publishedVersion)
Funders: Kwansei Gakuin University
Soochow University
Topics: Physical Sciences › Engineering › Electrical and Electronic Engineering › Silicon Carbide Semiconductor Technologies
Physical Sciences › Physics and Astronomy › Condensed Matter Physics › GaN-based semiconductor devices and materials
Physical Sciences › Materials Science › Electronic, Optical and Magnetic Materials › Ga2O3 and related materials
Keywords: silicon carbide, wide bandgap semiconductors, high-voltage power devices, Schottky diodes, SiC MOSFET, impurity doping, point defects, extended defects, device reliability, power semiconductor devices

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Material Science and Device Physics in SiC Technology for High-Voltage Power Devices

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