Cristoloveanu, S.

Ultimately thin double-gate SOI MOSFETs

Ernst, T., Cristoloveanu, S., Ghibaudo, G., Ouisse, T., Horiguchi, S., Ono, Y., Takahashi, Y., & Murase, K. (2003) · IEEE Transactions on Electron Devices

Advancements in Semiconductor Devices and Circuit DesignSemiconductor materials and devices

Cited by 245

Ultra-thin fully-depleted SOI MOSFETs: Special charge properties and coupling effects

Eminente, S., Cristoloveanu, S., Clerc, R., Ohata, A., & Ghibaudo, G. (2007) · Solid-State Electronics

Advancements in Semiconductor Devices and Circuit DesignSemiconductor materials and devices

Cited by 139

Investigation of the Four-Gate Action in<tex>$hbox G^4$</tex>-FETs

Dufrene, B., Akarvardar, K., Cristoloveanu, S., Blalock, B. J., Gentil, P., Kolawa, E., & Mojarradi, M. M. (2004) · IEEE Transactions on Electron Devices

Advancements in Semiconductor Devices and Circuit DesignSemiconductor materials and devices

Cited by 56

Low-frequency noise in SOI four-gate transistors

Akarvardar, K., Dufrene, B. M., Cristoloveanu, S., Gentil, P., Blalock, B. J., & Mojarradi, M. M. (2006) · IEEE Transactions on Electron Devices

Semiconductor materials and devicesAdvancements in Semiconductor Devices and Circuit Design

Cited by 51

Analytical modeling of the two-dimensional potential distribution and threshold voltage of the SOI four-gate transistor

Akarvardar, K., Cristoloveanu, S., & Gentil, P. (2006) · IEEE Transactions on Electron Devices

Advancements in Semiconductor Devices and Circuit DesignSemiconductor materials and devices

Cited by 48

Depletion-All-Around Operation of the SOI Four-Gate Transistor

Akarvardar, K., Cristoloveanu, S., Gentil, P., Schrimpf, R. D., & Blalock, B. J. (2007) · IEEE Transactions on Electron Devices

Advancements in Semiconductor Devices and Circuit DesignSemiconductor materials and devices

Cited by 41