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Cited by 245Advancements in Semiconductor Devices and Circuit DesignSemiconductor materials and devices2D Materials and Applications

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Ultimately thin double-gate SOI MOSFETs

Ernst, T., Cristoloveanu, S., Ghibaudo, G., Ouisse, T., Horiguchi, S., Ono, Y., Takahashi, Y., Murase, K.·2003·IEEE Transactions on Electron Devices
DOI 10.1109/ted.2003.811371
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Abstract

The operation of 1-3 nm thick SOI MOSFETs, in double-gate (DG) mode and single-gate (SG) mode (for either front or back channel), is systematically analyzed. Strong interface coupling and threshold voltage variation, a large influence of substrate depletion underneath the buried oxide, the absence of drain current transients, and degradation in electron mobility are typical effects in these ultra-thin MOSFETs. The comparison of SG and DG configurations demonstrates the superiority of DG-MOSFETs: ideal subthreshold swing and remarkably improved transconductance (consistently higher than twice the value in SG-MOSFETs). The experimental data and the difference between SG and DG modes is explained by combining classical models with quantum calculations. The key effect in ultimately thin DG-MOSFETs is volume inversion, which primarily leads to an improvement in mobility, whereas the total inversion charge is only marginally modified.

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Metadata

Authors
Ernst, T., Cristoloveanu, S., Ghibaudo, G., Ouisse, T., Horiguchi, S., Ono, Y., Takahashi, Y., & Murase, K.
Affiliations
  • Centre National de la Recherche Scientifique (FR)
  • NTT (Japan) (JP)
  • NTT Innovative Devices Corporation (Japan) (JP)
ORCID
Venue
IEEE Transactions on Electron Devices
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Published
2003-03
Volume
50
Issue
3
Pages
830-838
ISSN
0018-9383 (ISSN-L)
DOI
10.1109/ted.2003.811371
OpenAlex
W2166329620
Cited by
245
References
0
Citations by year
2026: 1 · 2025: 5 · 2024: 5 · 2023: 3 · 2022: 9 · 2021: 5 · 2020: 7 · 2019: 10 · 2018: 13 · 2017: 11 · 2016: 14 · 2015: 12 · 2014: 13 · 2013: 14 · 2012: 9
FWCI
17.73
Type
journal article
Language
en
Open access
closed
Licence
ieeexplore.ieee.org/Xplorehelp/downloads/license-information/IEEE.html (vor)
Locations
IEEE Transactions on Electron Devices (publishedVersion)
Topics
  • Physical Sciences › Engineering › Electrical and Electronic Engineering › Advancements in Semiconductor Devices and Circuit Design
  • Physical Sciences › Engineering › Electrical and Electronic Engineering › Semiconductor materials and devices
  • Physical Sciences › Materials Science › Materials Chemistry › 2D Materials and Applications
Keywords
double-gate MOSFET, single-gate MOSFET, ultra-thin SOI, buried oxide, threshold voltage variation, interface coupling, substrate depletion, electron mobility degradation, subthreshold swing, transconductance, volume inversion, inversion charge, quantum modeling

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