Canato, Eleonora

Reliability and failure analysis in power GaN-HEMTs: An overview

Meneghini, M., Rossetto, I., De Santi, C., Rampazzo, F., Tajalli, A., Barbato, A., Ruzzarin, M., Borga, M., Canato, E., Zanoni, E., et al. (2017) · 2017 IEEE International Reliability Physics Symposium (IRPS)

GaN-based semiconductor devices and materialsSilicon Carbide Semiconductor Technologies

Cited by 120

Threshold Voltage Instability Mechanisms in p-GaN Gate AlGaN/GaN HEMTs

Stockman, A., Canato, E., Meneghini, M., Meneghesso, G., Moens, P., & Bakeroot, B. (2019) · 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD)

GaN-based semiconductor devices and materialsSilicon Carbide Semiconductor Technologies

Cited by 66

Schottky Gate Induced Threshold Voltage Instabilities in p-GaN Gate AlGaN/GaN HEMTs

Stockman, A., Canato, E., Meneghini, M., Meneghesso, G., Moens, P., & Bakeroot, B. (2021) · IEEE Transactions on Device and Materials Reliability

GaN-based semiconductor devices and materialsSilicon Carbide Semiconductor Technologies

Cited by 54

$\mu s$-Range Evaluation of Threshold Voltage Instabilities of GaN-on-Si HEMTs with p-GaN Gate

Canato, E., Masin, F., Borga, M., Zanoni, E., Meneghini, M., Meneghesso, G., Stockman, A., Banerjee, A., & Moens, P. (2019) · 2019 IEEE International Reliability Physics Symposium (IRPS)

GaN-based semiconductor devices and materialsSilicon Carbide Semiconductor Technologies

Cited by 24

GaN-on-silicon transistors with reduced current collapse and improved blocking voltage by means of local substrate removal

Abid, I., Canato, E., Meneghini, M., Meneghesso, G., Cheng, K., & Medjdoub, F. (2021) · Applied Physics Express

GaN-based semiconductor devices and materialsSilicon Carbide Semiconductor Technologies

Cited by 13

Impact of Sidewall Etching on the Dynamic Performance of GaN-on-Si E-Mode Transistors

Tajalli, A., Canato, E., Nardo, A., Meneghini, M., Stockman, A., Moens, P., Zanoni, E., & Meneghesso, G. (2019) · 2019 IEEE International Reliability Physics Symposium (IRPS)

GaN-based semiconductor devices and materialsSilicon Carbide Semiconductor Technologies

Cited by 5