Valov, Ilia

Electrochemical metallization memories—fundamentals, applications, prospects

Valov, I., Waser, R., Jameson, J. R., & Kozicki, M. N. (2011) · Nanotechnology

Advanced Memory and Neural ComputingFerroelectric and Negative Capacitance Devices

Cited by 921

Nanobatteries in redox-based resistive switches require extension of memristor theory

Valov, I., Linn, E., Tappertzhofen, S., Schmelzer, S., van den Hurk, J., Lentz, F., & Waser, R. (2013) · Nature Communications

Advanced Memory and Neural ComputingFerroelectric and Negative Capacitance Devices

Cited by 587

Multibit memory operation of metal-oxide bi-layer memristors

Stathopoulos, S., Khiat, A., Trapatseli, M., Cortese, S., Serb, A., Valov, I., & Prodromakis, T. (2017) · Scientific Reports

Advanced Memory and Neural ComputingFerroelectric and Negative Capacitance Devices

Cited by 312

Faradaic currents during electroforming of resistively switching Ag–Ge–Se type electrochemical metallization memory cells

Schindler, C., Valov, I., & Waser, R. (2009) · Physical Chemistry Chemical Physics

Advanced Memory and Neural ComputingPhase-change materials and chalcogenides

Cited by 51

2022 roadmap on neuromorphic computing and engineering

Christensen, D. V., Dittmann, R., Linares-Barranco, B., Sebastian, A., Le Gallo, M., Redaelli, A., Slesazeck, S., Mikolajick, T., Spiga, S., Menzel, S., et al. (2022) · Neuromorphic Computing and Engineering

Advanced Memory and Neural ComputingNeural Networks and Reservoir Computing

Cited by 0