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Electrochemical metallization memories—fundamentals, applications, prospects
Open accessAbstract
This review focuses on electrochemical metallization memory cells (ECM), highlighting their advantages as the next generation memories. In a brief introduction, the basic switching mechanism of ECM cells is described and the historical development is sketched. In a second part, the full spectra of materials and material combinations used for memory device prototypes and for dedicated studies are presented. In a third part, the specific thermodynamics and kinetics of nanosized electrochemical cells are described. The overlapping of the space charge layers is found to be most relevant for the cell properties at rest. The major factors determining the functionality of the ECM cells are the electrode reaction and the transport kinetics. Depending on electrode and/or electrolyte material electron transfer, electro-crystallization or slow diffusion under strong electric fields can be rate determining. In the fourth part, the major device characteristics of ECM cells are explained. Emphasis is placed on switching speed, forming and SET/RESET voltage, R(ON) to R(OFF) ratio, endurance and retention, and scaling potentials. In the last part, circuit design aspects of ECM arrays are discussed, including the pros and cons of active and passive arrays. In the case of passive arrays, the fundamental sneak path problem is described and as well as a possible solution by two anti-serial (complementary) interconnected resistive switches per cell. Furthermore, the prospects of ECM with regard to further scalability and the ability for multi-bit data storage are addressed.
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This effect explains the observations in ECM devices that lower threshold voltages are typically required during programming processes compared with those for the initial forming process.
“This effect explains the observations in ECM devices that lower threshold voltages are typically required during programming processes, compared with those for the initial forming process 22,27,28 .”
From Observation of conducting filament growth in nanoscale resistive memories (2012) · cites this paper as [27]
Section 3.3 (page unavailable) distinguishes the initial forming cycle from later switching cycles and suggests that forming may leave a nano-channel that aids subsequent filament growth. This supports the proposed mechanism, but the passage does not state that programming threshold voltages are typically lower than forming voltages. (LLM, conf=0.78)
Experimental — accuracy not yet measuredIn the case of high cation concentrations such as in solid electrolyte (e.g., chalcogenide)-based devices, the reduction of cations and the crystallization of filaments will require significant space expansion, and the reduction/crystallization process can become the rate-limiting process.
“in the case of high cation concentrations such as in solid electrolyte (for example, chalcogenide)-based devices, the reduction of cations and the crystallization of filaments will require significant space expansion 27 , and the reduction/crystallization process can become the rate-limiting process.”
From Observation of conducting filament growth in nanoscale resistive memories (2012) · cites this paper as [27]
Split into 2 atoms — 1 confirmed, 1 partially supported, 0 disputed, 0 misattributed, 0 unverifiable. Expand the claim to see per-atom verdicts.
Experimental — accuracy not yet measuredFilament growth is determined by three dynamic processes: anodic dissolution of the metal component at the active electrode; transport of the metal ions through the dielectrics; and reduction of metal ions and crystallization of conducting filaments.
“In general, the filament growth is determined by three dynamic processes 27 : (i) the anodic dissolution of the metal component at the active electrode; (ii) the transport of the metal ions through the dielectrics; and (iii) the reduction of metal ions and the crystallization of conducting filaments.”
From Observation of conducting filament growth in nanoscale resistive memories (2012) · cites this paper as [27]
Filament formation involves oxidation, ion transport and reduction processes, all of which are thermodynamically driven and require overcoming specific activation energies.
“Filament formation involves oxidation, ion transport and reduction processes, all of which are thermodynamically driven (5,18) and require overcoming specific activation energies.”
From Stochastic memristive devices for computing and neuromorphic applications (2013) · cites this paper as [5]
The results obtained with memristive devices based on cation migration inside a solid-state electrolyte can be generalized to other cation or anion based memristive systems.
“but the results can be generalized to other cation (5) or anion (e.g. oxygen vacancy in oxides) (6) based memristive systems as well.”
From Stochastic memristive devices for computing and neuromorphic applications (2013) · cites this paper as [5]
Binary synapses are easier to fabricate, more robust and offer larger dynamic range.
“Binary synapses are easier to fabricate, more robust and offer larger dynamic range (4,5).”
From Stochastic memristive devices for computing and neuromorphic applications (2013) · cites this paper as [5]
It is possible to achieve multi-bit in binary memristive devices by controlling the programming current, however, precise current control in a large network is extremely challenging.
“It is possible to achieve multi-bit in binary memristive devices by controlling the programming current (5), however, precise current control in a large network is extremely challenging (30).”
From Stochastic memristive devices for computing and neuromorphic applications (2013) · cites this paper as [5]
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Self-citation
Metadata
- Authors
- Valov, I., Waser, R., Jameson, J. R., & Kozicki, M. N.
- Affiliations
- Forschungszentrum Jülich (DE)
- Arizona State University (US)
- Venue
- Nanotechnology
- Publisher
- IOP Publishing
- Published
- 2011-05-16
- Volume
- 22
- Issue
- 25
- Pages
- 254003
- ISSN
- 0957-4484 (ISSN-L)
- 1361-6528
- OpenAlex
- W1995363833
- Cited by
- 921
- References
- 89
- Citations by year
- 2026: 38 · 2025: 31 · 2024: 52 · 2023: 53 · 2022: 60 · 2021: 70 · 2020: 72 · 2019: 64 · 2018: 72 · 2017: 78 · 2016: 78 · 2015: 75 · 2014: 64 · 2013: 64 · 2012: 41
- FWCI
- 39.88
- Type
- journal article
- Language
- en
- Open access
- bronze
- doi.org
- Locations
- Nanotechnology (publishedVersion)
- PubMed (publishedVersion)
- CINECA IRIS Institutional Research Information System (University of Bari Aldo Moro) (submittedVersion)
- JuSER (Forschungszentrum Jülich) (submittedVersion)
- RWTH Publications (RWTH Aachen) (submittedVersion)
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Advanced Memory and Neural Computing
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Ferroelectric and Negative Capacitance Devices
- Physical Sciences › Materials Science › Materials Chemistry › Phase-change materials and chalcogenides
- Keywords
- resistive switching, depletion region, electrode kinetics, switching speed, endurance and retention, sneak paths, multi-bit storage, memory scaling, non-volatile memory
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