Borga, Matteo

Reliability and failure analysis in power GaN-HEMTs: An overview

Meneghini, M., Rossetto, I., De Santi, C., Rampazzo, F., Tajalli, A., Barbato, A., Ruzzarin, M., Borga, M., Canato, E., Zanoni, E., et al. (2017) · 2017 IEEE International Reliability Physics Symposium (IRPS)

GaN-based semiconductor devices and materialsSilicon Carbide Semiconductor Technologies

Cited by 120

Hot-Electron Trapping and Hole-Induced Detrapping in GaN-Based GITs and HD-GITs

Fabris, E., Meneghini, M., De Santi, C., Borga, M., Kinoshita, Y., Tanaka, K., Ishida, H., Ueda, T., Meneghesso, G., & Zanoni, E. (2019) · IEEE Transactions on Electron Devices

GaN-based semiconductor devices and materialsSilicon Carbide Semiconductor Technologies

Cited by 29

$\mu s$-Range Evaluation of Threshold Voltage Instabilities of GaN-on-Si HEMTs with p-GaN Gate

Canato, E., Masin, F., Borga, M., Zanoni, E., Meneghini, M., Meneghesso, G., Stockman, A., Banerjee, A., & Moens, P. (2019) · 2019 IEEE International Reliability Physics Symposium (IRPS)

GaN-based semiconductor devices and materialsSilicon Carbide Semiconductor Technologies

Cited by 24

Capture and emission time map to investigate the positive VTH shift in p-GaN power HEMTs

Modolo, N., Fregolent, M., Masin, F., Benato, A., Bettini, A., Buffolo, M., De Santi, C., Borga, M., Posthuma, N., Bakeroot, B., et al. (2022) · Microelectronics Reliability

GaN-based semiconductor devices and materialsSilicon Carbide Semiconductor Technologies

Cited by 16

Correlation of Heat Transport Mechanism and Structural Properties of GaN High Electron Mobility Transistors

Mitterhuber, L., Kosednar-Legenstein, B., Vohra, A., Borga, M., Posthuma, N., & Kraker, E. (2024) · Journal of Applied Physics

GaN-based semiconductor devices and materialsThermal properties of materials

Cited by 11