Hwang, Hyunsang

Experimental Demonstration and Tolerancing of a Large-Scale Neural Network (165 000 Synapses) Using Phase-Change Memory as the Synaptic Weight Element

Burr, G. W., Shelby, R. M., Sidler, S., di Nolfo, C., Jang, J., Boybat, I., Shenoy, R. S., Narayanan, P., Virwani, K., Giacometti, E. U., et al. (2015) · IEEE Transactions on Electron Devices

Advanced Memory and Neural ComputingNeural Networks and Applications

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Improved Synaptic Behavior Under Identical Pulses Using AlO x /HfO 2 Bilayer RRAM Array for Neuromorphic Systems

Woo, J., Moon, K., Song, J., Lee, S., Kwak, M., Park, J., & Hwang, H. (2016) · IEEE Electron Device Letters

Advanced Memory and Neural ComputingFerroelectric and Negative Capacitance Devices

Cited by 512

Optimization of Conductance Change in Pr1–xCaxMnO3-Based Synaptic Devices for Neuromorphic Systems

Jang, J.-W., Park, S., Burr, G. W., Hwang, H., & Jeong, Y.-H. (2015) · IEEE Electron Device Letters

Advanced Memory and Neural ComputingFerroelectric and Negative Capacitance Devices

Cited by 310

Neuromorphic Hardware System for Visual Pattern Recognition With Memristor Array and CMOS Neuron

Chu, M., Kim, B., Park, S., Hwang, H., Jeon, M., Lee, B. H., & Lee, B.-G. (2015) · IEEE Transactions on Industrial Electronics

Advanced Memory and Neural ComputingNeural Networks and Reservoir Computing

Cited by 296

Perspective: A review on memristive hardware for neuromorphic computation

Sung, C., Hwang, H., & Yoo, I. K. (2018) · Journal of Applied Physics

Advanced Memory and Neural ComputingFerroelectric and Negative Capacitance Devices

Cited by 217

Neuromorphic speech systems using advanced ReRAM-based synapse

Park, S., Sheri, A., Kim, J., Noh, J., Jang, J., Jeon, M., Lee, B., Lee, B. R., Lee, B. H., & Hwang, H. (2013) · 2013 IEEE International Electron Devices Meeting

Advanced Memory and Neural ComputingNeural Networks and Applications

Cited by 201

RRAM-based synapse for neuromorphic system with pattern recognition function

Park, S., Kim, H., Choo, M., Noh, J., Sheri, A., Jung, S., Seo, K., Park, J., Kim, S., Lee, W., et al. (2012) · 2012 International Electron Devices Meeting

Advanced Memory and Neural ComputingFerroelectric and Negative Capacitance Devices

Cited by 191

Electronic system with memristive synapses for pattern recognition

Park, S., Chu, M., Kim, J., Noh, J., Jeon, M., Hun Lee, B., Hwang, H., Lee, B., & Lee, B.-G. (2015) · Scientific Reports

Advanced Memory and Neural ComputingNeural Networks and Applications

Cited by 181

Threshold Selector With High Selectivity and Steep Slope for Cross-Point Memory Array

Song, J., Woo, J., Prakash, A., Lee, D., & Hwang, H. (2015) · IEEE Electron Device Letters

Advanced Memory and Neural ComputingFerroelectric and Negative Capacitance Devices

Cited by 169

Nanoscale RRAM-based synaptic electronics: toward a neuromorphic computing device

Park, S., Noh, J., Choo, M.-L., Sheri, A. M., Chang, M., Kim, Y.-B., Kim, C. J., Jeon, M., Lee, B.-G., Lee, B. H., et al. (2013) · Nanotechnology

Advanced Memory and Neural ComputingFerroelectric and Negative Capacitance Devices

Cited by 139

Linking Conductive Filament Properties and Evolution to Synaptic Behavior of RRAM Devices for Neuromorphic Applications

Woo, J., Padovani, A., Moon, K., Kwak, M., Larcher, L., & Hwang, H. (2017) · IEEE Electron Device Letters

Advanced Memory and Neural ComputingFerroelectric and Negative Capacitance Devices

Cited by 103

Optimized Programming Scheme Enabling Linear Potentiation in Filamentary HfO 2 RRAM Synapse for Neuromorphic Systems

Woo, J., Moon, K., Song, J., Kwak, M., Park, J., & Hwang, H. (2016) · IEEE Transactions on Electron Devices

Advanced Memory and Neural ComputingFerroelectric and Negative Capacitance Devices

Cited by 96

Integration of 4F2 selector-less crossbar array 2Mb ReRAM based on transition metal oxides for high density memory applications

Lee, H. D., Kim, S. G., Cho, K., Hwang, H., Choi, H., Lee, J., Lee, S. H., Lee, H. J., Suh, J., Chung, S.-O., et al. (2012) · 2012 Symposium on VLSI Technology (VLSIT)

Advanced Memory and Neural ComputingFerroelectric and Negative Capacitance Devices

Cited by 68

ReRAM-based synaptic device for neuromorphic computing

Jang, J.-W., Park, S., Jeong, Y.-H., & Hwang, H. (2014) · 2014 IEEE International Symposium on Circuits and Systems (ISCAS)

Advanced Memory and Neural ComputingFerroelectric and Negative Capacitance Devices

Cited by 67

Stuck-at-Fault Tolerant Schemes for Memristor Crossbar Array-Based Neural Networks

Yeo, I., Chu, M., Gi, S.-G., Hwang, H., & Lee, B.-G. (2019) · IEEE Transactions on Electron Devices

Advanced Memory and Neural ComputingNeural Networks and Applications

Cited by 55

High Work-Function Metal Gate and High-<tex>$kappa$</tex>Dielectrics for Charge Trap Flash Memory Device Applications

Jeon, S., Han, J. H., Lee, J. H., Choi, S., Hwang, H., & Kim, C. (2005) · IEEE Transactions on Electron Devices

Semiconductor materials and devicesAdvancements in Semiconductor Devices and Circuit Design

Cited by 44

Improved Synaptic Behavior of CBRAM Using Internal Voltage Divider for Neuromorphic Systems

Lim, S., Kwak, M., & Hwang, H. (2018) · IEEE Transactions on Electron Devices

Advanced Memory and Neural ComputingFerroelectric and Negative Capacitance Devices

Cited by 40

Scalable Neuron Circuit Using Conductive-Bridge RAM for Pattern Reconstructions

Jang, J.-W., Attarimashalkoubeh, B., Prakash, A., Hwang, H., & Jeong, Y.-H. (2016) · IEEE Transactions on Electron Devices

Advanced Memory and Neural ComputingFerroelectric and Negative Capacitance Devices

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