Palmour, John

10 kV/120 A SiC DMOSFET half H-bridge power modules for 1 MVA solid state power substation

Grider, D., Das, M., Agarwal, A., Palmour, J., Leslie, S., Ostop, J., Raju, R., Schutten, M., & Hefner, A. (2011) · 2011 IEEE Electric Ship Technologies Symposium

Silicon Carbide Semiconductor TechnologiesMultilevel Inverters and Converters

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Channel mobility and on-resistance of vertical double implanted 4H-SiC MOSFETs at elevated temperatures

Rumyantsev, S. L., Shur, M. S., Levinshtein, M. E., Ivanov, P. A., Palmour, J. W., Agarwal, A. K., Hull, B. A., & Ryu, S.-H. (2009) · Semiconductor Science and Technology

Silicon Carbide Semiconductor TechnologiesSemiconductor materials and devices

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High-Mobility Stable 1200-V, 150-A 4H-SiC DMOSFET Long-Term Reliability Analysis Under High Current Density Transient Conditions

Schrock, J. A., Ray II, W. B., Lawson, K., Bilbao, A., Bayne, S. B., Holt, S. L., Cheng, L., Palmour, J. W., & Scozzie, C. (2015) · IEEE Transactions on Power Electronics

Silicon Carbide Semiconductor TechnologiesGaN-based semiconductor devices and materials

Cited by 43