The DOI matches its Crossref record; 23 of the 23 references it cites were found in a registry or an index.
High-Mobility Stable 1200-V, 150-A 4H-SiC DMOSFET Long-Term Reliability Analysis Under High Current Density Transient Conditions
Abstract
For SiC DMOSFETs to obtain widespread usage in power electronics their long-term operational ability to handle the stressful transient current and high temperatures common in power electronics needs to be further verified. To determine the long-term reliability of a single 4H-SiC DMOSFET, the effects of extreme high current density were evaluated. The 4H-SiC DMOSFET has an active conducting area of 40 mm2, and is rated for 1200 V and 150 A. The device was electrically stressed by hards-witching transient currents in excess of four times the given rating (>600 A) corresponding to a current density of 1500 A/cm2. Periodically throughout testing, several device characteristics including RDS(on)and VG S(th) were measured. After 500 000 switching cycles, the device showed a 6.77% decrease in RDS (on), and only a 132-mV decreased in VG S(th). Additionally, the dc characteristics of the device were analyzed from 25 to 150 °C and revealed a 200-mV increase in on-state voltage drop at 20 A and a 2-V reduction in VG S(th)at 150 °C. These results show this SiC DMOSFET has robust long-term reliability in high-power applications that are susceptible to pulse over currents, such as pulsed power modulators and hard-switched power electronics.
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Extended defects such as micropipes, basal plane dislocations, and stacking faults increase leakage current and reduce breakdown voltage in SiC.
“Extended defects such as micropipes, basal plane dislocations (BPDs), and stacking faults increase leakage current and reduce breakdown voltage [60-62], while deep-level point defects (such as the Z1/2 and EH6/7 centers) act as carrier recombination centers that shorten carrier lifetime [2].”
From Thermal Management of Wide-Bandgap Power Semiconductors: Strategies and Challenges in SiC and GaN Power Devices (2025) · cites this paper as [61]
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Cites
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SiC Power Devices for Microgrids
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Self-citationHigh Temperature Stability and the Performance Degradation of SiC MOSFETs
Zhou, W., Zhong, X., & Sheng, K. (2013) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2013.2283509 · Cited by 166
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Experimental and Analytical Performance Evaluation of SiC Power Devices in the Matrix Converter
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A Self-Aligned Process for High-Voltage, Short-Channel Vertical DMOSFETs in 4H-SiC
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High-Mobility Stable 4H-SiC MOSFETs Using a Thin PSG Interfacial Passivation Layer
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10 A, 2.4 kV Power DiMOSFETs in 4H-SiC
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Monolithically Integrated Temperature Sensor in Silicon Carbide Power MOSFETs
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A SiC CMOS Linear Voltage Regulator for High-Temperature Applications
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A 10-kV Large-Area 4H-SiC Power DMOSFET With Stable Subthreshold Behavior Independent of Temperature
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A 4H Silicon Carbide Gate Buffer for Integrated Power Systems
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Characterization and comparison of 1.2 kV SiC power semiconductor devices
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A SiC NMOS Linear Voltage Regulator for High-Temperature Applications
Valle-Mayorga, J., Rahman, A., & Mantooth, H. A. (2013) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2013.2279251 · Cited by 34
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Self-citationHard-Switch Stressing of Vertical-Channel Implanted-Gate SiC JFETs
Lawson, K., Alvarez, G. M., Bayne, S. B., et al. (2011) · IEEE Electron Device Letters · doi:10.1109/led.2011.2172183 · Cited by 23
Self-citation10 kV, 123 mΩ-cm/sup 2/4H-SiC power DMOSFETs
Ryu, S., Krishnaswami, S., O’Loughlin, M. J., et al. (2004) · Conference digest · doi:10.1109/drc.2004.1367777 · Cited by 18
Analysis and prediction of stability in commercial, 1200 V, 33A, 4H-SiC MOSFETs
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Research works printed but not linked: 2
- ryu, 0, 10 kV, 123 m?-cm2 4H-SiC power DMOSFETs, Proc Device Res Conf, 1, 47
- 2012, CMF20120D-Silicon Carbide Power MOSFET, datasheet Cree Inc
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Han, G., Kim, J., Park, S., & Bae, W. (2025) · Electronics · doi:10.3390/electronics14214193 · Cited by 34
Metadata
- Authors
- Schrock, J. A., Ray II, W. B., Lawson, K., Bilbao, A., Bayne, S. B., Holt, S. L., Cheng, L., Palmour, J. W., & Scozzie, C.
- Affiliations
- Texas Tech University (US)
- Wolfspeed, Inc. (United States) (US)
- DEVCOM Army Research Laboratory (US)
- Venue
- IEEE Transactions on Power Electronics
- Published
- 2015-06
- Volume
- 30
- Issue
- 6
- Pages
- 2891-2895
- ISSN
- 0885-8993 (ISSN-L)
- 1941-0107
- OpenAlex
- W1983627056
- Cited by
- 43
- References
- 23
- Citations by year
- 2025: 4 · 2024: 4 · 2022: 3 · 2021: 4 · 2020: 2 · 2019: 3 · 2018: 3 · 2017: 7 · 2016: 9 · 2015: 4
- FWCI
- 3.54
- Type
- journal article
- Language
- en
- Open access
- closed
- Locations
- IEEE Transactions on Power Electronics (publishedVersion)
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Silicon Carbide Semiconductor Technologies
- Physical Sciences › Physics and Astronomy › Condensed Matter Physics › GaN-based semiconductor devices and materials
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Radiation Effects in Electronics
- Keywords
- long-term reliability, hard switching, threshold voltage shift, high-temperature operation, power cycling, high-power switching devices, pulsed power modulator
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