Farhadi, Masoud

Temperature-Independent Gate-Oxide Degradation Monitoring of SiC MOSFETs Based on Junction Capacitances

Farhadi, M., Yang, F., Pu, S., Vankayalapati, B. T., & Akin, B. (2021) · IEEE Transactions on Power Electronics

Silicon Carbide Semiconductor TechnologiesSemiconductor materials and devices

Cited by 93

AC Power Cycling Test Setup and Condition Monitoring Tools for SiC-Based Traction Inverters

Farhadi, M., Vankayalapati, B. T., Sajadi, R., & Akin, B. (2023) · IEEE Transactions on Vehicular Technology

Silicon Carbide Semiconductor TechnologiesMultilevel Inverters and Converters

Cited by 24

Fault-Tolerant Performance Enhancement of DC-DC Converters with High-Speed Fault Clearing-unit based Redundant Power Switch Configurations

Rahimi, T., Jahan, H. K., Abadifard, A., Akbari, M., Ghavidel, P., Farhadi, M., & Hosseini, S. H. (2021) · 2021 IEEE Electrical Power and Energy Conference (EPEC)

Advanced DC-DC ConvertersMultilevel Inverters and Converters

Cited by 12

Fuzzy Lifetime Analysis of a Fault-Tolerant Two-Phase Interleaved Converter

Rahimi, T., Farhadi, M., Loo, K. H., & Pou, J. (2021) · 2021 IEEE 13th International Symposium on Diagnostics for Electrical Machines, Power Electronics and Drives (SDEMPED)

Advanced DC-DC ConvertersReliability and Maintenance Optimization

Cited by 4