Kranti, Abhinav

Analytical model for threshold voltage and I–V characteristics of fully depleted short channel cylindrical/surrounding gate MOSFET

Kranti, A., Haldar, S., & Gupta, R. S. (2001) · Microelectronic Engineering

Advancements in Semiconductor Devices and Circuit DesignSemiconductor materials and devices

Cited by 90

Applicability of Transconductance-to-Current Ratio ( $g_{\mathrm {m}}/I_{\mathrm {ds}}$ ) as a Sensing Metric for Tunnel FET Biosensors

Dwivedi, P., & Kranti, A. (2017) · IEEE Sensors Journal

Advancements in Semiconductor Devices and Circuit DesignAnalytical Chemistry and Sensors

Cited by 87