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Cited by 87Advancements in Semiconductor Devices and Circuit DesignAnalytical Chemistry and SensorsElectrochemical sensors and biosensors

The DOI matches its Crossref record; 1 of the 1 references it cites were found in a registry or an index.

Applicability of Transconductance-to-Current Ratio ( $g_{\mathrm {m}}/I_{\mathrm {ds}}$ ) as a Sensing Metric for Tunnel FET Biosensors

Dwivedi, Praveen, Kranti, Abhinav·2017·IEEE Sensors Journal
DOI 10.1109/jsen.2016.2640192
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Abstract

In this paper, we propose and evaluate the feasibility of transconductance-to-current ratio (gm/Ids) as a sensing metric for a tunnel field-effect transistor (TFET)-based dielectric modulated biosensor. Focusing on the enhancement of the values of gm/Idsand current ratio at lower current levels to signify the presence of biomolecules in the dielectric cavity of TFET biosensor, the metric can be used not only for sensitivity but also for selectivity as the current ratio changes appreciably for the three different types of biomolecules, namely, Streptavidin, Biotin, and APTES. The gm/Idsextraction takes into account the operation at low power consumption, i.e., in the subthreshold region, which is most sensitive for biomolecule detection. The sensing methodology is governed by the location of the biomolecules within the cavity, and is less dependent on the fill-in factor. This paper highlights new opportunities to identify the sensing metric in TFET-based dielectric modulated biosensors.

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Crossref · 10.1109/jsen.2016.2640192

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1 of 1 references verified0 citation errors · 0 not checkable

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  • The gm/Ids method achieves lower power dissipation for biosensing application.

    “This method focuses on the variation of transconductanceto-current ratio (g m /I ds ) with drain current because the parameter shows a noticeable variation for biomolecules with different dielectric constants in subthreshold region, which achieves lower power dissipation for biosensing application.”

    From A Vertically Stacked Nanosheet Gate-All-Around FET for Biosensing Application (2021) · cites this paper as [18]

  • The transconductance-to-current ratio (gm/Ids) shows a noticeable variation for biomolecules with different dielectric constants in the subthreshold region.

    “This method focuses on the variation of transconductanceto-current ratio (g m /I ds ) with drain current because the parameter shows a noticeable variation for biomolecules with different dielectric constants in subthreshold region, which achieves lower power dissipation for biosensing application.”

    From A Vertically Stacked Nanosheet Gate-All-Around FET for Biosensing Application (2021) · cites this paper as [18]

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Metadata

Authors
Dwivedi, P., & Kranti, A.
Affiliations
Indian Institute of Technology Indore (IN)
ORCID
Venue
IEEE Sensors Journal
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Published
2017-02-15
Volume
17
Issue
4
Pages
1030-1036
ISSN
  • 1530-437X (ISSN-L)
  • 1558-1748
  • 2379-9153
DOI
10.1109/jsen.2016.2640192
OpenAlex
W2567335776
Cited by
87
References
1
Citations by year
2026: 9 · 2025: 11 · 2024: 13 · 2023: 14 · 2022: 10 · 2021: 15 · 2020: 9 · 2019: 2 · 2018: 4
FWCI
0.83
Type
journal article
Language
en
Open access
closed
Licence
ieeexplore.ieee.org/Xplorehelp/downloads/license-information/IEEE.html (vor)
Locations
IEEE Sensors Journal (publishedVersion)
Funders
Council of Scientific and Industrial Research, Government of India (22(0688)/15/EMR-II)
Topics
  • Physical Sciences › Engineering › Electrical and Electronic Engineering › Advancements in Semiconductor Devices and Circuit Design
  • Physical Sciences › Chemistry › Analytical Chemistry › Analytical Chemistry and Sensors
  • Physical Sciences › Chemistry › Analytical Chemistry › Electrochemical sensors and biosensors
Keywords
tunnel field-effect transistor, TFET biosensor, dielectric modulation, biomolecule detection, subthreshold operation, low-power sensing, streptavidin, biotin, 3-aminopropyltriethoxysilane, sensitivity and selectivity

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