Nardo, A.

Hot-Electron Effects in AlGaN/GaN HEMTs Under Semi-ON DC Stress

Minetto, A., Deutschmann, B., Modolo, N., Nardo, A., Meneghini, M., Zanoni, E., Sayadi, L., Prechtl, G., Sicre, S., & Haberlen, O. (2020) · IEEE Transactions on Electron Devices

GaN-based semiconductor devices and materialsSilicon Carbide Semiconductor Technologies

Cited by 65

Positive and negative charge trapping GaN HEMTs: Interplay between thermal emission and transport-limited processes

Nardo, A., De Santi, C., Koller, C., Ostermaier, C., Daumiller, I., Meneghesso, G., Zanoni, E., & Meneghini, M. (2021) · Microelectronics Reliability

GaN-based semiconductor devices and materialsSilicon Carbide Semiconductor Technologies

Cited by 32

Impact of Sidewall Etching on the Dynamic Performance of GaN-on-Si E-Mode Transistors

Tajalli, A., Canato, E., Nardo, A., Meneghini, M., Stockman, A., Moens, P., Zanoni, E., & Meneghesso, G. (2019) · 2019 IEEE International Reliability Physics Symposium (IRPS)

GaN-based semiconductor devices and materialsSilicon Carbide Semiconductor Technologies

Cited by 5