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Hot-Electron Effects in AlGaN/GaN HEMTs Under Semi-ON DC Stress
Abstract
An analysis of hot-electron (HE) effects on the dynamic resistance (dRON) of AlGaN/GaN high-electron-mobility transistors (HEMTs) when subject to semi-ON stress is reported and compared with OFF-state stress. This is carried out using measurements and TCAD 2-D hydrodynamic simulations. Two structures with different distances between the highly carbon-doped buffer region and the two-dimensional electron gas (2DEG) are here considered. The additional dRONin semi-ON is attributed to HEs trapping at the passivation/AlGaN interface. TCAD simulations are performed and compared with experimental results.
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During OFF-state operation, high drain voltages can lead to injection of electrons into surface states and/or buffer traps in GaN HEMTs.
“during OFF-state operation the transistor is subjected to very high drain voltages that can lead to the injection of electrons into surface states [32] and/or in buffer traps [33]”
From Review and Outlook on GaN and SiC Power Devices: Industrial State-of-the-Art, Applications, and Perspectives (2024) · cites this paper as [33]
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References 20 · Cited by 65
Research works printed but not linked: 19
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Metadata
- Authors
- Minetto, A., Deutschmann, B., Modolo, N., Nardo, A., Meneghini, M., Zanoni, E., Sayadi, L., Prechtl, G., Sicre, S., & Haberlen, O.
- Affiliations
- Graz University of Technology (AT)
- University of Padua (IT)
- Infineon Technologies (Austria) (AT)
- ORCID
- Venue
- IEEE Transactions on Electron Devices
- Published
- 2020-11
- Volume
- 67
- Issue
- 11
- Pages
- 4602-4605
- ISSN
- 0018-9383 (ISSN-L)
- 1557-9646
- OpenAlex
- W3092199139
- Cited by
- 65
- References
- 20
- Citations by year
- 2026: 5 · 2025: 7 · 2024: 14 · 2023: 16 · 2022: 11 · 2021: 12
- FWCI
- 9.57
- Type
- journal article
- Language
- en
- Open access
- closed
- Licence
- Locations
- IEEE Transactions on Electron Devices (publishedVersion)
- Padua Research Archive (University of Padova) (submittedVersion)
- Topics
- Physical Sciences › Physics and Astronomy › Condensed Matter Physics › GaN-based semiconductor devices and materials
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Silicon Carbide Semiconductor Technologies
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Semiconductor materials and devices
- Keywords
- hot electron effects, AlGaN/GaN HEMT, dynamic on-resistance, hot electron trapping, two-dimensional electron gas, hydrodynamic modeling, device reliability
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