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Positive and negative charge trapping GaN HEMTs: Interplay between thermal emission and transport-limited processes
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ON-resistance instability can occur due to interplay of electron trapping and other mechanisms, such as generation of positive charge (holes generated by transfer of electrons from the buffer to the channel) during drain stress.
“ON-resistance instability can occur due to the interplay of the electron trapping (in surface and/or buffer states) and other mechanisms, like the generation of positive charge (i.e., holes generated by the transfer of electrons from the buffer to the channel) during drain stress [34]”
From Review and Outlook on GaN and SiC Power Devices: Industrial State-of-the-Art, Applications, and Perspectives (2024) · cites this paper as [34]
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Research works printed but not linked: 15
- Meneghini, 2017, Reliability and failure analysis in power GaN-HEMTs: an overview, IEEE Int. Reliab. Phys. Symp. Proc.
- De Santi, 2018, Review of dynamic effects and reliability of depletion and enhancement GaN HEMTs for power switching applications, IET Power Electron., 11, 668, 10.1049/iet-pel.2017.0403 · DOI
- Meneghini, 2019, Degradation physics of GaN-based lateral and vertical devices, vol. 10918
- Fang, 2010, Deep traps in AlGaN/GaN heterostructures studied by deep level transient spectroscopy: effect of carbon concentration in GaN buffer layers, J. Appl. Phys., 108, 10.1063/1.3488610 · DOI
- Chini, 2016, Experimental and numerical analysis of hole emission process from carbon-related traps in GaN buffer layers, IEEE Trans. Electron Devices, 63, 3473, 10.1109/TED.2016.2593791 · DOI
- Meneghini, 2014, Role of buffer doping and pre-existing trap states in the current collapse and degradation of AlGaN/GaN HEMTs, IEEE Int. Reliab. Phys. Symp. Proc.
- Marso, 2003, Investigation of buffer traps in an AlGaN/GaN/Si high electron mobility transistor by backgating current deep level transient spectroscopy, Appl. Phys. Lett., 82, 633, 10.1063/1.1540239 · DOI
- Uren, 2012, Buffer design to minimize current collapse in GaN/AlGaN HFETs, IEEE Trans. Electron Devices, 59, 3327, 10.1109/TED.2012.2216535 · DOI
- Uren, 2014, Intentionally carbon-doped algan/gan HEMTs: necessity for vertical leakage paths, IEEE Electron Device Lett., 35, 327, 10.1109/LED.2013.2297626 · DOI
- Nardo, 2020, Storage and release of buffer charge in GaN-on-Si HEMTs investigated by transient measurements, Appl. Phys. Express, 13, 10.35848/1882-0786/ab9623 · DOI
- Zagni, 2019, The role of carbon doping on breakdown, current collapse, and dynamic on-resistance recovery in AlGaN/GaN high electron mobility transistors on semi-insulating SiC substrates, Phys. Status Solidi, 217
- Iucolano, 2016, Correlation between dynamic Rdsou transients and carbon related buffer traps in AlGaN/GaN HEMTs, IEEE Int. Reliab. Phys. Symp. Proc., vol. 2016-Septe
- Uren, 2017, ‘leaky Dielectric’ model for the suppression of dynamic RON in carbon-doped AlGaN/GaN HEMTs, IEEE Trans. Electron Devices, 64, 2826, 10.1109/TED.2017.2706090 · DOI
- Koller, 2018, Effect of carbon doping on charging/discharging dynamics and leakage behavior of carbon-doped GaN, IEEE Trans. Electron Devices, 65, 5314, 10.1109/TED.2018.2872552 · DOI
- Zagni, 2021, ‘Hole Redistribution’ model explaining the thermally activated RONStress/Recovery transients in carbon-doped AlGaN/GaN power MIS-HEMTs, IEEE Trans. Electron Devices, 68, 697, 10.1109/TED.2020.3045683 · DOI
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Buffolo, M., Favero, D., Marcuzzi, A., De Santi, C., Meneghesso, G., Zanoni, E., & Meneghini, M. (2024) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2023.3346369 · Cited by 476
Self-citation
Metadata
- Authors
- Nardo, A., De Santi, C., Koller, C., Ostermaier, C., Daumiller, I., Meneghesso, G., Zanoni, E., & Meneghini, M.
- Affiliations
- University of Padua (IT)
- Infineon Technologies (Austria) (AT)
- Corresponding author
- Nardo, A.
- Venue
- Microelectronics Reliability
- Publisher
- Elsevier BV
- Published
- 2021-11
- Volume
- 126
- Pages
- 114255
- ISSN
- 0026-2714 (ISSN-L)
- OpenAlex
- W3206293236
- Cited by
- 32
- References
- 0
- Citations by year
- 2026: 7 · 2025: 7 · 2024: 10 · 2023: 6 · 2022: 2
- FWCI
- 1.89
- Type
- journal article
- Language
- en
- Open access
- green
- arxiv.org
- Licence
- Locations
- Microelectronics Reliability (publishedVersion)
- arXiv (Cornell University) (submittedVersion)
- Padua Research Archive (University of Padova) (submittedVersion)
- arXiv (Cornell University)
- Funders
- Horizon 2020
- Electronic Components and Systems for European Leadership (826392)
- Ministero dell’Istruzione, dell’Università e della Ricerca
- Topics
- Physical Sciences › Physics and Astronomy › Condensed Matter Physics › GaN-based semiconductor devices and materials
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Silicon Carbide Semiconductor Technologies
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Semiconductor materials and devices
- Keywords
- GaN HEMT, negative charge trapping, positive charge trapping, thermal radiation, carbon acceptors, activation energy, normally-off transistors, high-voltage transistors, transfer length method, recovery experiments
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