Lelis, Aivars J.

Basic Mechanisms of Threshold-Voltage Instability and Implications for Reliability Testing of SiC MOSFETs

Lelis, A. J., Green, R., Habersat, D. B., & El, M. (2015) · IEEE Transactions on Electron Devices

Silicon Carbide Semiconductor TechnologiesSemiconductor materials and devices

Cited by 477

An electrically detected magnetic resonance study of performance limiting defects in SiC metal oxide semiconductor field effect transistors

Cochrane, C. J., Lenahan, P. M., & Lelis, A. J. (2011) · Journal of Applied Physics

Silicon Carbide Semiconductor TechnologiesSemiconductor materials and devices

Cited by 96

Short-Circuit Robustness Testing of SiC MOSFETs

Green, R., Urciuoli, D. P., & Lelis, A. J. (2017) · Materials Science Forum

Silicon Carbide Semiconductor TechnologiesRadiation Effects in Electronics

Cited by 19

Short-Circuit Robustness of SiC Trench MOSFETs

Green, R., Urciuoli, D., & Lelis, A. J. (2018) · Materials Science Forum

Silicon Carbide Semiconductor TechnologiesSemiconductor materials and devices

Cited by 13

Channel Hot-Carrier Effect of 4H-SiC MOSFET

Yu, L. C., Cheung, K. P., Suehle, J. S., Campbell, J. P., Sheng, K., Lelis, A. J., & Ryu, S. H. (2009) · Materials Science Forum

Silicon Carbide Semiconductor TechnologiesSemiconductor materials and devices

Cited by 12