Basic Mechanisms of Threshold-Voltage Instability and Implications for Reliability Testing of SiC MOSFETs
Abstract
A review of the basic mechanisms affecting the stability of the threshold voltage in response to a bias-temperature stress is presented in terms of the charging and activation of near-interfacial oxide traps. An activation energy of approximately 1.1 eV was calculated based on new experimental results. Implications of these factors, including the recovery of some bias-temperature stress-activated defects, for improved device reliability testing are discussed.
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For 4H-SiC MOSFETs submitted to PBTI, multiple observations of a positive threshold-voltage shift are found in literature, both linear and superlinear with the logarithm of stress time.
“For 4H-SiC MOSFETs submitted to PBTI, multiple observations of a positive shift are found in literature [28], both linear and superlinear with the logarithm of stress time.”
From Review and Outlook on GaN and SiC Power Devices: Industrial State-of-the-Art, Applications, and Perspectives (2024) · cites this paper as [28]
The positive PBTI shift in 4H-SiC MOSFETs is generally ascribed to electrons tunneling to near-interfacial-oxide traps.
“This shift is generally ascribed to electrons tunneling to near-interfacial-oxide-traps.”
From Review and Outlook on GaN and SiC Power Devices: Industrial State-of-the-Art, Applications, and Perspectives (2024) · cites this paper as [28]
The magnitude of the PBTI threshold-voltage shift in 4H-SiC MOSFETs is much lower than in GaN, but becomes considerable (1-5 V) for high voltages and high temperatures.
“The magnitude of the shift is much lower than what is observed for GaN, but becomes considerable (1-5 V) for high voltages and high temperatures.”
From Review and Outlook on GaN and SiC Power Devices: Industrial State-of-the-Art, Applications, and Perspectives (2024) · cites this paper as [28]
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Gate Oxide Reliability Studies of Commercial 1.2 kV 4H-SiC Power MOSFETs
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- Authors
- Lelis, A. J., Green, R., Habersat, D. B., & El, M.
- Affiliations
- DEVCOM Army Research Laboratory (US)
- Venue
- IEEE Transactions on Electron Devices
- Published
- 2015-02
- Volume
- 62
- Issue
- 2
- Pages
- 316-323
- ISSN
- 0018-9383 (ISSN-L)
- 1557-9646
- OpenAlex
- W2091749383
- Cited by
- 477
- References
- 1
- Citations by year
- 2026: 34 · 2025: 48 · 2024: 58 · 2023: 50 · 2022: 35 · 2021: 41 · 2020: 41 · 2019: 51 · 2018: 50 · 2017: 38 · 2016: 21 · 2015: 10
- FWCI
- 12.22
- Type
- journal article
- Language
- en
- Open access
- closed
- Locations
- IEEE Transactions on Electron Devices (publishedVersion)
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Silicon Carbide Semiconductor Technologies
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Semiconductor materials and devices
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Radiation Effects in Electronics
- Keywords
- threshold voltage instability, SiC MOSFET, bias-temperature stress, trap activation energy, defect recovery
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