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Channel Hot-Carrier Effect of 4H-SiC MOSFET
Abstract
SiC MOSFET, as power device, can be expected to operate with high drain and high gate voltages, possibly leading to hot-carrier effect. However, hot-carrier degradation in a SiC MOSFET is difficult to detect because the as fabricated devices contain high level of defects. We report, for the first time, evidence of hot-carrier effect in 4H-SiC MOSFET. The result suggests that hot hole from impact ionization trapped in the oxide is the cause of the channel hot-carrier effect.
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During switching transient, MOSFET operates at relatively high drain-to-source voltage and gate-to-source voltage, and some carriers have enough energy to pass the oxide barrier.
“During switching transient, MOSFET operates at relatively high drain to source voltage and gate to source voltage, and some carriers have enough energy to pass the oxide barrier [53].”
From AC Power Cycling Test Setup and Condition Monitoring Tools for SiC-Based Traction Inverters (2023) · cites this paper as [53]
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Cited by
Sorted by citations
Reliability Issues of SiC MOSFETs: A Technology for High-Temperature Environments
Yu, L., Dunne, G. T., Matocha, K., Cheung, K. P., Suehle, J. S., & Sheng, K. (2010) · IEEE Transactions on Device and Materials Reliability · doi:10.1109/tdmr.2010.2077295 · Cited by 228
“[7] reported evidence of channel hot carrier in SiC MOSFET operated at moderate drain bias.”
BackgroundSelf-citationReview on SiC MOSFETs High-Voltage Device Reliability Focusing on Threshold Voltage Instability
Puschkarsky, K., Grasser, T., Aichinger, T., Gustin, W., & Reisinger, H. (2019) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2019.2938262 · Cited by 219
“For SiC, so far there are less than a handful reports [20], [21] without any striking results.”
BackgroundAging Mechanisms and Accelerated Lifetime Tests for SiC MOSFETs: An Overview
Pu, S., Yang, F., Vankayalapati, B. T., & Akin, B. (2021) · IEEE Journal of Emerging and Selected Topics in Power Electronics · doi:10.1109/jestpe.2021.3110476 · Cited by 142
“During switching transients, the high E-field in the device channel caused by large drain–source voltage imparts sufficient kinetic energy to the electrons present in the channel to cause hot carrier injection (HCI) effect and leads to device aging [41].”
BackgroundYang, S., Zhang, Y., Song, Q., Tang, X.-Y., Zhang, Y., Yuan, L., & Zhang, Y. (2017) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2017.2737358 · Cited by 25
AC Power Cycling Test Setup and Condition Monitoring Tools for SiC-Based Traction Inverters
Farhadi, M., Vankayalapati, B. T., Sajadi, R., & Akin, B. (2023) · IEEE Transactions on Vehicular Technology · doi:10.1109/tvt.2023.3271251 · Cited by 24
“On-Resistance [53] Threshold Voltage [48] Body Diode Voltage [52] Turn-on Characteristic [55] Turn-Off Delay Time [54] Gate Plateau Voltage [56] Gate Leakage Current [57] 4pin-Source Impedance [58] Thermal Impedance [59]”
BackgroundReliability Evaluation of SiC MOSFETs Under Realistic Power Cycling Tests
Farhadi, M., Vankayalapati, B. T., & Akin, B. (2023) · IEEE Power Electronics Magazine · doi:10.1109/mpel.2023.3271621 · Cited by 21
“Gate oxide degradation can occur due to a variety of mechanisms, including hot carrier injection (HCI) [4], bias temperature instability (BTI) [5], and time-dependent dielectric breakdown (TDDB) [6].”
BackgroundA Smart Silicon Carbide LED Driver IC With Integrated Dual-Level Condition-Monitoring Mechanism
Huang, Y., & Ma, D. B. (2024) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2024.3358634 · Cited by 8
“These carriers inevitably inject into the insulator layer, causing hot carrier injection, further compromising gate-oxide reliability [7].”
BackgroundGruber, G., Hadley, P., Koch, M., & Aichinger, T. (2014) · Applied Physics Letters · doi:10.1063/1.4891847 · Cited by 7
Simulation, modeling and characterization of SiC devices
Yu, L. (2010) · Rutgers University Community Repository (Rutgers University) · doi:10.7282/t3k64j5t · Cited by 4
Self-citationCharacterization and Modeling of Single Charge Trapping in MOS Transistors
Waltl, M. (2019) · IEEE International Integrated Reliability Workshop final report · doi:10.1109/iirw47491.2019.8989880 · Cited by 3
Reliability and Condition Monitoring of Sic Power MOSFETsPreprint
Farhadi, M. (2024) · SSRN Electronic Journal · doi:10.2139/ssrn.4832844 · Cited by 2
Semiconductor Microelectronics and Nanoelectronics Programs
de Pinillos, J. V. M., Obeng, Y. S., & Buckley, M. (2010) · doi:10.6028/nist.ir.7686
Lu, P., Yang, S., Sun, T., et al. (2025) · International Conference on Electrical Engineering and Control Technologies (CEECT) · doi:10.1109/ceect67814.2025.11393312
“The number of electrons trapped in NIOTs increases with both the magnitude and duration of the applied electrical stress[16].”
Metadata
- Authors
- Yu, L. C., Cheung, K. P., Suehle, J. S., Campbell, J. P., Sheng, K., Lelis, A. J., & Ryu, S. H.
- Affiliations
- National Institute of Standards and Technology (US)
- Rutgers, The State University of New Jersey (US)
- DEVCOM Army Research Laboratory (US)
- Wolfspeed, Inc. (United States) (US)
- Venue
- Materials Science Forum
- Publisher
- Trans Tech Publications, Ltd.
- Published
- 2009-03-02
- Volume
- 615-617
- Pages
- 813-816
- ISSN
- 0255-5476 (ISSN-L)
- 1662-9752
- OpenAlex
- W2091488694
- Cited by
- 12
- References
- 0
- Citations by year
- 2025: 1 · 2024: 1 · 2023: 2 · 2021: 1 · 2019: 2 · 2017: 1 · 2014: 1
- FWCI
- 0.79
- Type
- journal article
- Language
- en
- Open access
- closed
- Licence
- Locations
- Materials science forum (publishedVersion)
- Funders
- National Institute of Standards and Technology
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Silicon Carbide Semiconductor Technologies
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Semiconductor materials and devices
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Radiation Effects in Electronics
- Keywords
- 4H-SiC MOSFET, silicon carbide power devices, impact ionization, hot carrier degradation
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