Zhang, Yuhao

Stability, Reliability, and Robustness of GaN Power Devices: A Review

Kozak, J. P., Zhang, R., Porter, M., Song, Q., Liu, J., Wang, B., Wang, R., Saito, W., & Zhang, Y. (2023) · IEEE Transactions on Power Electronics

GaN-based semiconductor devices and materialsSilicon Carbide Semiconductor Technologies

Cited by 441

Surge-Energy and Overvoltage Ruggedness of P-Gate GaN HEMTs

Zhang, R., Kozak, J. P., Xiao, M., Liu, J., & Zhang, Y. (2020) · IEEE Transactions on Power Electronics

GaN-based semiconductor devices and materialsSilicon Carbide Semiconductor Technologies

Cited by 148

Dynamic Breakdown Voltage of GaN Power HEMTs

Zhang, R., Kozak, J. P., Song, Q., Xiao, M., Liu, J., & Zhang, Y. (2020) · 2020 IEEE International Electron Devices Meeting (IEDM)

GaN-based semiconductor devices and materialsSilicon Carbide Semiconductor Technologies

Cited by 81

Power device breakdown mechanism and characterization: review and perspective

Zhang, R., & Zhang, Y. (2023) · Japanese Journal of Applied Physics

Silicon Carbide Semiconductor TechnologiesGaN-based semiconductor devices and materials

Cited by 40