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Cited by 441GaN-based semiconductor devices and materialsSilicon Carbide Semiconductor TechnologiesGa2O3 and related materials

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Stability, Reliability, and Robustness of GaN Power Devices: A Review

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Kozak, Joseph Peter, Zhang, Ruizhe, Porter, Matthew, Song, Qihao, Liu, Jingcun, Wang, Bixuan, Wang, Rudy, Saito, Wataru, Zhang, Yuhao·2023·IEEE Transactions on Power Electronics
DOI 10.1109/tpel.2023.3266365
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Abstract

Gallium nitride (GaN) devices are revolutionarily advancing the efficiency, frequency, and form factor of power electronics. However, the material composition, architecture and physics of many GaN devices are significantly different from silicon and silicon carbide devices. These distinctions result in many unique stability, reliability and robustness issues facing GaN power devices. This paper reviews the current understanding of these issues, particularly those related to dynamic switching, and their impacts on system performance. Instead of delving into reliability physics, this paper intends to provide power electronics engineers the necessary information for deploying GaN devices in existing and emerging applications, as well as provide references for the qualification evaluations of GaN power devices. The issues covered in this paper include the dynamic instability of device parameters (e.g., on-resistance, threshold voltage, output capacitance), the device robustness in avalanche, overvoltage and short-circuit conditions, the device's switching reliability and lifetime, as well as the device's ruggedness under radiation and extreme (cryogenic and elevated) temperatures. Knowledge gaps and immediate research opportunities in the relevant fields are also discussed.

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Metadata

Authors
Kozak, J. P., Zhang, R., Porter, M., Song, Q., Liu, J., Wang, B., Wang, R., Saito, W., & Zhang, Y.
Affiliations
  • Johns Hopkins University Applied Physics Laboratory (US)
  • Virginia Tech (US)
  • Milan Power Electronics Laboratory, Delta Electronics (Americas), Ltd., Durham, NC, USA
  • Kyushu University (JP)
ORCID
Venue
IEEE Transactions on Power Electronics
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Published
2023-07
Volume
38
Issue
7
Pages
8442-8471
ISSN
  • 0885-8993 (ISSN-L)
  • 1941-0107
DOI
10.1109/tpel.2023.3266365
OpenAlex
W4365131572
Cited by
441
References
5
Citations by year
2026: 130 · 2025: 173 · 2024: 105 · 2023: 33
FWCI
46.80
Type
journal article
Language
en
Open access
Licence
Locations
  • IEEE Transactions on Power Electronics (publishedVersion, cc-by)
  • The HKU Scholars Hub (University of Hong Kong) (submittedVersion)
Funders
Center for Power Electronics Systems Industry Consortium
Topics
  • Physical Sciences › Physics and Astronomy › Condensed Matter Physics › GaN-based semiconductor devices and materials
  • Physical Sciences › Engineering › Electrical and Electronic Engineering › Silicon Carbide Semiconductor Technologies
  • Physical Sciences › Materials Science › Electronic, Optical and Magnetic Materials › Ga2O3 and related materials
Keywords
gallium nitride power devices, device reliability, dynamic switching, device stability, switching reliability, device lifetime, radiation effects, cryogenic operation, high-temperature operation, on-resistance, threshold voltage, output capacitance, device qualification

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