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Surge-Energy and Overvoltage Ruggedness of P-Gate GaN HEMTs
Abstract
An essential ruggedness of power devices is the capability of safely withstanding the surge energy. The surge ruggedness of the GaN high-electron-mobility transistor (HEMT), a power transistor with no or minimal avalanche capability, has not been fully understood. This article unveils the comprehensive physics associated with the surge-energy withstand process and the failure mechanisms of p-gate GaN HEMTs. Two commercial p-gate GaN HEMTs with Ohmic- and Schottky-type gate contacts are studied. Two circuits are developed to study the device surge ruggedness: an unclamped inductive switching circuit is first used to identify the withstand dynamics and failure mechanisms, and a clamped inductive switching circuit with a controllable parasitic inductance is then designed to mimic the surge energy in converter-like switching events. The p-gate GaN HEMT is found to withstand the surge energy through a resonant energy transfer between the device capacitance and the load/parasitic inductance rather than a resistive energy dissipation as occurred in the avalanche. If the device resonant voltage goes below zero, the device reversely turns on and the inductor is discharged. The device failure occurs at the transient of peak resonant voltage and is limited by the device overvoltage capability rather than the surge energy, dV/dt, or overvoltage duration. Almost no energy is dissipated in the resonant withstand process and the device failure is dominated by an electric field rather than a thermal runaway. These results provide critical understandings on the ruggedness of GaN HEMTs and important references for their qualifications and applications.
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For Si and SiC transistors, surge energy is generally related to avalanche energy.
“For Si and SiC transistors, instead, devices surge energy is generally related to avalanche energy [47].”
From Review and Outlook on GaN and SiC Power Devices: Industrial State-of-the-Art, Applications, and Perspectives (2024) · cites this paper as [47]
Citations
Cites
Review of Commercial GaN Power Devices and GaN-Based Converter Design Challenges
Jones, E. A., Wang, F. F., & Costinett, D. (2016) · IEEE Journal of Emerging and Selected Topics in Power Electronics · doi:10.1109/jestpe.2016.2582685 · Cited by 1,259
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Allen, N. P., Xiao, M., Yan, X., Sasaki, K., Tadjer, M. J., Ma, J., Zhang, R., Wang, H., & Zhang, Y. (2019) · IEEE Electron Device Letters · doi:10.1109/led.2019.2931697 · Cited by 216
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Marek, J., Stuchlíková, Ł., Jagelka, M., Chvála, A., Príbytný, P., Donoval, M., & Donoval, D. (2016) · International Conference on Advanced Semiconductor Devices and Microsystems · doi:10.1109/asdam.2016.7805923 · Cited by 13
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Kozárik, J., Marek, J., Jagelka, M., Cernaj, L., Chvála, A., & Donoval, D. (2018) · International Conference on Advanced Semiconductor Devices and Microsystems · doi:10.1109/asdam.2018.8544555 · Cited by 12
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Self-citationZhou, F., Zhou, T., Zou, C., Yu, R., Qian, J., Xu, W., Ren, F., Zhou, D., Chen, D., Zheng, Y., et al. (2024) · IEEE Electron Device Letters · doi:10.1109/led.2024.3501073 · Cited by 8
Self-citationSun, R., Wu, R., Wang, X., Liu, C., Chen, W., & Zhang, B. (2025) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2025.3564234 · Cited by 8
Gate Drive Circuit Suitable for a GaN Gate Injection Transistor
Hattori, F., Yanagisawa, Y., Imaoka, J., & Yamamoto, M. (2023) · IEEE Access · doi:10.1109/access.2023.3270261 · Cited by 8
A Comparative Study of GaN HEMT and Si MOSFET-Based Active Clamp Forward Converters
Li, X., Ma, H., Yi, J., Lu, S., & Xu, J. (2020) · Energies · doi:10.3390/en13164160 · Cited by 8
Xu, W., Zhou, F., Liu, Q., Ren, F., Zhou, D., Chen, D., Zhang, R., Zheng, Y., & Lu, H. (2021) · IEEE Electron Device Letters · doi:10.1109/led.2021.3121182 · Cited by 8
Self-citationZhou, F., Xu, W., Jin, Y., Zhou, T., Ren, F., Zhou, D., Chen, D., Zhang, R., Zheng, Y., & Lu, H. (2022) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2022.3200629 · Cited by 8
Self-citationExceptional Gate Overvoltage Robustness in P-Gate GaN HEMT with Integrated Circuit Interface
Wang, B., Song, Q., Mukherjee, K., Efthymiou, L., Popa, D., Longobardi, G., Udrea, F., & Zhang, Y. (2024) · Conference proceedings/Conference proceedings - IEEE Applied Power Electronics Conference and Exposition · doi:10.1109/apec48139.2024.10509533 · Cited by 7
Self-citationNormally-off GaN HEMTs with InGaN p-gate cap layer formed by polarization doping
Zeng, C., Xu, W., Xia, Y., Wang, K., Ren, F., Zhou, D., Li, Y., Zhu, T., Chen, D., Zhang, R., et al. (2021) · Applied Physics Express · doi:10.35848/1882-0786/ac407e · Cited by 7
Self-citationJiang, X., Wu, Y., Yuan, S., Li, X., Yan, Z., Chen, J., Jiang, T., Zhang, S., Gong, X., Niu, H., et al. (2025) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2025.3546964 · Cited by 6
Plenty of Room at the Bottom and Top: Future Perspectives on GaN Power Devices and Applications
Yang, Z., Yang, X., Liu, J., Cui, H., Lei, K., Guo, Y., Gao, T., Chan, P. C. H., Xia, L., Wang, H., et al. (2026) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2026.3675006 · Cited by 6
Self-citationZhang, R., Song, Q., Li, Q., & Zhang, Y. (2022) · Conference proceedings/Conference proceedings - IEEE Applied Power Electronics Conference and Exposition · doi:10.1109/apec43599.2022.9773713 · Cited by 6
Self-citationFailure Process of GaN-HEMTs by Repetitive Overvoltage Stress
Saito, W., & Nishizawa, S. (2023) · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · doi:10.1109/ispsd57135.2023.10147411 · Cited by 6
Liu, Y., Tang, X.-Y., Yuan, H., Wang, X., Zhang, Y., Guo, J., Sun, L., Song, Q., & Zhang, Y. (2023) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2023.3329002 · Cited by 6
Self-citationProjecting GaN HEMTs lifetimes under typical stresses commonly observed in DC-DC converters
Zhang, S., Gajare, S. G., Garcia, R. A., Huang, S., Espinoza, A., Gorgerino, A., Zhang, R., Pozo, A., Strittmatter, R., & Lidow, A. (2023) · Power Electronic Devices and Components · doi:10.1016/j.pedc.2023.100051 · Cited by 6
Self-citationBreakdown Voltage and Leakage Current of the Nonuniformly Activated Lightly Doped p-GaN
Yang, Z., Ma, Y., Porter, M., Gong, H., Du, Z., Wang, H., Luo, Y., Wang, L., & Zhang, Y. (2024) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2024.3433837 · Cited by 6
Self-citationGaN MIS-HEMTs in Repetitive Overvoltage Switching: Parametric Shift and Recovery
Song, Q., Kozak, J. P., Ma, Y., Liu, J., Zhang, R., Volkov, R., Sherman, D., Smith, K. V., Saito, W., & Zhang, Y. (2022) · IEEE International Reliability Physics Symposium proceedings · doi:10.1109/irps48227.2022.9764548 · Cited by 6
Self-citationGaN Power Devices for Electrified Transportation: Status, Challenges, and Perspectives
Zhang, H., Huang, Y., Cui, H., Yang, X., Yang, Z., Guo, J., Jin, H., Li, D., Zhang, Y., Yang, Q., et al. (2026) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2026.3656259 · Cited by 5
Self-citationGate Lifetime of P-Gate GaN HEMT in Inductive Power Switching
Wang, B., Zhang, R., Wang, H., He, Q., Song, Q., Li, Q., Udrea, F., & Zhang, Y. (2023) · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · doi:10.1109/ispsd57135.2023.10147610 · Cited by 5
Self-citationImpact of Conduction Current on Output Capacitance Loss in GaN HEMTs
Song, Q., Zhang, R., Li, Q., & Zhang, Y. (2023) · Conference proceedings/Conference proceedings - IEEE Applied Power Electronics Conference and Exposition · doi:10.1109/apec43580.2023.10131551 · Cited by 5
Self-citationDeng, G., Bi, X., Yang, C., Luo, B., Xie, X., Li, J., Zhang, B., Wu, J., & Luo, X. (2025) · IEEE Electron Device Letters · doi:10.1109/led.2025.3627292 · Cited by 4
Joshi, V., Chaudhuri, R. R., Gupta, S. D., & Shrivastava, M. (2023) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2023.3321281 · Cited by 4
Liu, L., Zhen, Y., Li, S., Pang, B., & Zeng, K. (2025) · Micromachines · doi:10.3390/mi16050514 · Cited by 4
GaN Power Transistors in Converter Design Techniques
Chrzan, P. J., & Derkacz, P. B. (2025) · Energies · doi:10.3390/en18112890 · Cited by 4
Heating issues in wide-bandgap semiconductor devices
Spencer, J. A., Mock, A. L., & Zhang, Y. (2022) · Elsevier eBooks · doi:10.1016/b978-0-12-821084-0.00003-2 · Cited by 4
Self-citationThird quadrant overvoltage ruggedness of p-gate GaN HEMTs
Yuan, L., Zhou, F., Jin, Y., Yang, Q., Xu, W., Ren, F., Zhou, D., Chen, D., Zhang, R., Zheng, Y., et al. (2022) · Semiconductor Science and Technology · doi:10.1088/1361-6641/ac84a1 · Cited by 4
Self-citationFailure Analysis of 200V p-GaN HEMT under Unclamped Inductive Switching Conditions
Ye, J., Li, X., Wu, Y., Deng, X., Li, Z., & Zhang, B. (2021) · IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia) · doi:10.1109/wipdaasia51810.2021.9656037 · Cited by 4
Accelerating the Recovery of p-Gate GaN HEMTs after Overvoltage Stresses
Kozak, J. P., Song, Q., Liu, J., Zhang, R., Li, Q., Saito, W., & Zhang, Y. (2022) · IEEE International Reliability Physics Symposium proceedings · doi:10.1109/irps48227.2022.9764463 · Cited by 4
Self-citation(Invited) How to Achieve Low Thermal Resistance and High Electrothermal Ruggedness in Ga2O3 Devices?
Zhang, Y., Wang, B., Xiao, M., Spencer, J. A., Zhang, R., Knoll, J., DiMarino, C., Lu, G., Sasaki, K., & Buttay, C. (2021) · ECS Transactions · doi:10.1149/10405.0021ecst · Cited by 4
Self-citationIntegration of Miller Circuit With RC Network for Negative-Voltage Gate Drive of GaN Devices
Liang, J., Wu, Y. F., LingHu, Y., Zhang, X., Lin, D., & Sun, T. (2025) · IEEE Transactions on Industry Applications · doi:10.1109/tia.2025.3585871 · Cited by 3
Amrani, M. E., Lyu, J., Wen, X., Marcuzzi, A., Arguello, D. P., M'Qaddem, Z., Kaltsounis, T., Rammouz, H. E., Meneghesso, G., Meneghini, M., et al. (2025) · Journal of Applied Physics · doi:10.1063/5.0299842 · Cited by 3
Cui, H., Liu, X., Yang, X., Gong, H., Yang, R. T., Song, L., Chen, F., Wang, J., Sun, Y., Kong, P., et al. (2025) · Technical digest - International Electron Devices Meeting/Technical digest · doi:10.1109/iedm50572.2025.11353782 · Cited by 3
Self-citationE-Mode p-GaN Gate Punch-Through HEMT with Robust Non-Destructive Drain Breakdown
Yu, J., Yang, J., Lao, Y., Liu, S., Yang, H., Yang, X., Wang, M., Chen, K. J., Shen, B., & Wei, J. (2025) · Technical digest - International Electron Devices Meeting/Technical digest · doi:10.1109/iedm50572.2025.11353769 · Cited by 3
Proposing a Duty Cycle Based Repetitive Drain Overvoltage Specification for GaN HEMTs
Zhang, S., Espinoza, A., Garcia, R. A., Arribas, A. P., & Strittmatter, R. (2024) · IEEE Power Electronics Magazine · doi:10.1109/mpel.2024.3354648 · Cited by 3
Rodero, H. G., Garrido, D., Aizpuru, I., & Baraia-Etxaburu, I. (2025) · Electronics · doi:10.3390/electronics14142875 · Cited by 3
Effect of Substrate Bias in Ohmic p-Gate GaN-HEMTs on Unclamped Inductive Switching Capability
Saito, W., & Nishizawa, S. (2025) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2025.3597272 · Cited by 3
Zekentes, K., Veliadis, V., Ryu, S., Vassilevski, K. V., Pavlidis, S., Salemi, A., & Zhang, Y. (2023) · Springer eBooks · doi:10.1007/978-3-031-21610-7_2 · Cited by 4
Self-citation
Metadata
- Authors
- Zhang, R., Kozak, J. P., Xiao, M., Liu, J., & Zhang, Y.
- Affiliations
- Virginia Tech (US)
- Venue
- IEEE Transactions on Power Electronics
- Published
- 2020-12
- Volume
- 35
- Issue
- 12
- Pages
- 13409-13419
- ISSN
- 0885-8993 (ISSN-L)
- 1941-0107
- OpenAlex
- W3024406559
- Cited by
- 148
- References
- 22
- Citations by year
- 2026: 16 · 2025: 28 · 2024: 22 · 2023: 31 · 2022: 16 · 2021: 29 · 2020: 6
- FWCI
- 20.12
- Type
- journal article
- Language
- en
- Open access
- closed
- Licence
- Locations
- IEEE Transactions on Power Electronics (publishedVersion)
- The HKU Scholars Hub (University of Hong Kong) (submittedVersion)
- OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information) (submittedVersion)
- Funders
- Power America Institute, Department of Energy
- Virginia Polytechnic Institute and State University
- Topics
- Physical Sciences › Physics and Astronomy › Condensed Matter Physics › GaN-based semiconductor devices and materials
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Silicon Carbide Semiconductor Technologies
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Electromagnetic Compatibility and Noise Suppression
- Keywords
- resonance energy transfer, parasitic inductance, device failure mechanisms
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