Schell, M.

All-fiber terahertz time-domain spectrometer operating at 1.5 μm telecom wavelengths

Sartorius, B., Roehle, H., Künzel, H., Böttcher, J., Schlak, M., Stanze, D., Venghaus, H., & Schell, M. (2008) · Optics Express

Terahertz technology and applicationsLaser-Matter Interactions and Applications

Cited by 265

Terahertz-time domain spectrometer with 90 dB peak dynamic range

Vieweg, N., Rettich, F., Deninger, A., Roehle, H., Dietz, R., Göbel, T., & Schell, M. (2014) · Journal of Infrared Millimeter and Terahertz Waves

Terahertz technology and applicationsLaser-Matter Interactions and Applications

Cited by 203

All fiber-coupled THz-TDS system with kHz measurement rate based on electronically controlled optical sampling

Dietz, R. J. B., Vieweg, N., Puppe, T., Zach, A., Globisch, B., Göbel, T., Leisching, P., & Schell, M. (2014) · Optics Letters

Terahertz technology and applicationsLaser-Matter Interactions and Applications

Cited by 119

Iron doped InGaAs: Competitive THz emitters and detectors fabricated from the same photoconductor

Globisch, B., Dietz, R. J. B., Kohlhaas, R. B., Göbel, T., Schell, M., Alcer, D., Semtsiv, M., & Masselink, W. T. (2017) · Journal of Applied Physics

Terahertz technology and applicationsAdvanced Semiconductor Detectors and Materials

Cited by 105

64 μ W pulsed terahertz emission from growth optimized InGaAs/InAlAs heterostructures with separated photoconductive and trapping regions

Dietz, R. J. B., Globisch, B., Gerhard, M., Velauthapillai, A., Stanze, D., Roehle, H., Koch, M., Göbel, T., & Schell, M. (2013) · Applied Physics Letters

Terahertz technology and applicationsAdvanced Semiconductor Detectors and Materials

Cited by 103

Photoconductive terahertz detectors with 105 dB peak dynamic range made of rhodium doped InGaAs

Kohlhaas, R. B., Breuer, S., Nellen, S., Liebermeister, L., Schell, M., Semtsiv, M. P., Masselink, W. T., & Globisch, B. (2019) · Applied Physics Letters

Terahertz technology and applicationsAdvanced Semiconductor Detectors and Materials

Cited by 68

Carrier dynamics in Beryllium doped low-temperature-grown InGaAs/InAlAs

Globisch, B., Dietz, R. J. B., Stanze, D., Göbel, T., & Schell, M. (2014) · Applied Physics Letters

Semiconductor Quantum Structures and Devicessolar cell performance optimization

Cited by 63