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Ultrahigh Energy‐Storage Density in NaNbO3‐Based Lead‐Free Relaxor Antiferroelectric Ceramics with Nanoscale Domains
Abstract
Dielectric energy‐storage capacitors have received increasing attention in recent years due to the advantages of high voltage, high power density, and fast charge/discharge rates. Here, a new environment‐friendly 0.76NaNbO 3–0.24(Bi 0.5 Na 0.5)TiO 3 relaxor antiferroelectric (AFE) bulk ceramic is studied, where local orthorhombic Pnma symmetry (R phase) and nanodomains are observed based on high‐resolution transmission electron microscopy, selected area electron diffraction, and in/ex situ synchrotron X‐ray diffraction. The orthorhombic AFE R phase and relaxor characteristics synergistically contribute to the record‐high energy‐storage density Wrec of ≈12.2 J cm−3 and acceptable energy efficiency η ≈ 69% at 68 kV mm−1, showing great advantages over currently reported bulk dielectric ceramics. In comparison with normal AFEs, the existence of large random fields in the relaxor AFE matrix and intrinsically high breakdown strength of NaNbO 3‐based compositions are thought to be responsible for the observed energy‐storage performances. Together with the good thermal stability of Wrec (>7.4 J cm−3) and η (>73%) values at 45 kV mm−1 up to temperature of 200 °C, it is demonstrated that NaNbO 3‐based relaxor AFE ceramics will be potential lead‐free dielectric materials for next‐generation pulsed power capacitor applications.
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Cited by
Electroceramics for High-Energy Density Capacitors: Current Status and Future Perspectives
Wang, G., Lu, Z., Li, Y., Li, L., Ji, H., Feteira, A., Zhou, D., Wang, D., Zhang, S., & Reaney, I. M. (2021) · Chemical Reviews · doi:10.1021/acs.chemrev.0c01264 · Cited by 1,380
Self-citationJi, H., Wang, D., Bao, W., Lu, Z., Wang, G., Yang, H., Mostaed, A., Li, L., Feteira, A., Sun, S., et al. (2021) · Energy Storage Materials · doi:10.1016/j.ensm.2021.01.023 · Cited by 281
Interfacial Polarization Restriction for Ultrahigh Energy‐Storage Density in Lead‐Free Ceramics
Cao, W., Lin, R., Hou, X., Li, L., Li, F., Bo, D., Ge, B., Song, D., Zhang, J., Cheng, Z., et al. (2023) · Advanced Functional Materials · doi:10.1002/adfm.202301027 · Cited by 280
Antiferroelectric oxide thin-films: Fundamentals, properties, and applications
Si, Y., Zhang, T., Liu, C., Das, S., Xu, B., Burkovsky, R. G., Wei, X.-K., & Chen, Z. (2024) · Progress in Materials Science · doi:10.1016/j.pmatsci.2023.101231 · Cited by 84
Shen, H., Zhou, B., Zhang, Y., Qi, R., Chen, Y., Chen, X., Fu, Z., Wang, G., Yang, J., Bai, W., et al. (2024) · Journal of Applied Physics · doi:10.1063/5.0206234 · Cited by 6
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Metadata
- Authors
- Qi, H., Zuo, R., Xie, A., Tian, A., Fu, J., Zhang, Y., & Zhang, S.
- Venue
- Advanced Functional Materials
- Publisher
- Wiley
- Published
- 2019-07-05
- Volume
- 29
- Issue
- 35
- ISSN
- 1616-301X (ISSN-L)
- 1616-3028
- OpenAlex
- W2953790234
- Cited by
- 655
- References
- 0
- FWCI
- 23.79
- Type
- journal article
- Language
- en
- Open access
- closed
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