Cited by 6Ferroelectric and Piezoelectric MaterialsFerroelectric and Negative Capacitance DevicesMultiferroics and related materials

Temperature-dependent antiferroelectric properties in La3+ doped PbHfO3 thin films with enhanced energy storage density and stability

Open access
Shen, Hao, Zhou, Boxiang, Zhang, Yuanyuan, Qi, Ruijuan, Chen, Yu'ang, Chen, Xuefeng, Fu, Zhengqian, Wang, Genshui +4 more·2024·Journal of Applied Physics

Abstract

Antiferroelectric thin films have attracted blooming interest due to their potential application in energy storage areas. Pb(1−3x/2)LaxHfO3 (PLHO-x, x = 0–0.05) thin films were fabricated on Pt(111)/TiO2/SiO2/Si substrates via the chemical solution deposition method. The x-ray diffraction and high-resolution transmission electron microscopy results show that the doping of La3+, which has a smaller ion radius, leads to a slight decrease in the lattice constant and unit cell volume, which can induce the lattice distortion. In addition, the dielectric and polarization properties indicate that with an increase in the temperature or La3+ content, the antiferroelectric (AFE) I phase can transform into an AFE II phase, exhibiting a slimmer P–E loop with enhanced switching field and more pronounced polarization dispersion. Notably, PLHO-0.04 showcases excellent energy storage performance (55 J/cm3, at 2.8 MV/cm). This material also exhibits good thermal, frequency, and fatigue stability. These results suggest that the energy storage performance of PbHfO3-based films can be enhanced through the phase structure design, presenting a valuable approach to fulfill the growing demand for advanced energy storage devices.

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Registry

Crossref · 10.1063/5.0206234

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Authors
Shen, H., Zhou, B., Zhang, Y., Qi, R., Chen, Y., Chen, X., Fu, Z., Wang, G., Yang, J., Bai, W., Tang, X., & Zhang, S.
Affiliations
  • East China Normal University (CN)
  • University of Wollongong (AU)
  • Chinese Academy of Sciences (CN)
Venue
Journal of Applied Physics
Published
2024-06-27
Volume
135
Issue
24
ISSN
  • 0021-8979 (ISSN-L)
  • 1089-7550
OpenAlex
W4400091723
Cited by
6
References
58
Citations by year
2026: 1 · 2025: 5
FWCI
0.57
Type
journal article
Language
en
Open access
Licence
cc-by-nc-nd
Locations
  • Journal of Applied Physics (publishedVersion, cc-by-nc-nd)
  • Figshare (submittedVersion)
Funders
Natural Science Foundation of Chongqing Municipality (CSTB2022NSCQ-MSX1474, CSTB2022NSCQ-MSX0589)
Topics
  • Physical Sciences › Materials Science › Materials Chemistry › Ferroelectric and Piezoelectric Materials
  • Physical Sciences › Engineering › Electrical and Electronic Engineering › Ferroelectric and Negative Capacitance Devices
  • Physical Sciences › Materials Science › Electronic, Optical and Magnetic Materials › Multiferroics and related materials
Keywords
antiferroelectric thin films, PbHfO3, lanthanum doping, energy storage density, phase transformation, P-E hysteresis loops, switching field, polarization dispersion, lattice distortion, fatigue stability, dielectric properties, chemical solution deposition

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