The DOI matches its Crossref record; 3 of the 3 references it cites were found in a registry or an index.
Progress with Molecular Electronic Junctions: Meeting Experimental Challenges in Design and Fabrication
Abstract
Molecular electronics seeks to incorporate molecular components as functional elements in electronic devices. There are numerous strategies reported to date for the fabrication, design, and characterization of such devices, but a broadly accepted example showing structure‐dependent conductance behavior has not yet emerged. This progress report focuses on experimental methods for making both single‐molecule and ensemble molecular junctions, and highlights key results from these efforts. Based on some general objectives of the field, particular experiments are presented to show progress in several important areas, and also to define those areas that still need attention. Some of the variable behavior of ostensibly similar junctions reported in the literature is attributable to differences in the way the junctions are fabricated. These differences are due, in part, to the multitude of methods for supporting the molecular layer on the substrate, including methods that utilize physical adsorption and covalent bonds, and to the numerous strategies for making top contacts. After discussing recent experimental progress in molecular electronics, an assessment of the current state of the field is presented, along with a proposed road map that can be used to assess progress in the future.
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Cites
Strukov, D. B., Snider, G. S., Stewart, D. R., & Williams, R. S. (2008) · Nature · doi:10.1038/nature06932 · Cited by 11,828
Nanoionics-based resistive switching memories
Waser, R., & Aono, M. (2007) · Nature Materials · doi:10.1038/nmat2023 · Cited by 4,923
Memristive switching mechanism for metal/oxide/metal nanodevices
Yang, J. J., Pickett, M. D., Li, X., Ohlberg, D. A. A., Stewart, D. R., & Williams, R. S. (2008) · Nature Nanotechnology · doi:10.1038/nnano.2008.160 · Cited by 2,987
Cited by
Memristive devices for computing
Yang, J. J., Strukov, D. B., & Stewart, D. R. (2013) · Nature Nanotechnology · doi:10.1038/nnano.2012.240 · Cited by 3,885
High switching endurance in TaOx memristive devices
Yang, J. J., Zhang, M.-X., Strachan, J. P., Miao, F., Pickett, M. D., Kelley, R. D., Medeiros-Ribeiro, G., & Williams, R. S. (2010) · Applied Physics Letters · doi:10.1063/1.3524521 · Cited by 637
Metadata
- Authors
- McCreery, R. L., & Bergren, A. J.
- Venue
- Advanced Materials
- Publisher
- Wiley
- Published
- 2009-11-19
- Volume
- 21
- Issue
- 43
- Pages
- 4303-4322
- ISSN
- 0935-9648 (ISSN-L)
- 1521-4095
- OpenAlex
- W1972815794
- Cited by
- 362
- References
- 3
- FWCI
- 27.72
- Type
- journal article
- Language
- en
- Open access
- closed
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