High switching endurance in TaOx memristive devices
Open accessAbstract
We demonstrate over 1×1010 open-loop switching cycles from a simple memristive device stack of Pt/TaOx/Ta. We compare this system to a similar device stack based on titanium oxides to obtain insight into the solid-state thermodynamic and kinetic factors that influence endurance in metal-oxide memristors.
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Memristors are promising candidates for future high-density nonvolatile memories because of demonstrated high endurance, electroforming-free operation, CMOS compatibility, and integrability in high-density cross-bar arrays.
“Memristors are promising candidates for future high-density nonvolatile memories given their demonstrated desirable properties such as high endurance [4,5], electroforming-free operation [4], compatibility with complementary metal-oxide-semiconductor (CMOS) processes [6], and the ability to be integrated in high-density cross-bar arrays [7,8].”
From Sub-nanosecond switching of a tantalum oxide memristor (2011) · cites this paper as [4]
Cites
Strukov, D. B., Snider, G. S., Stewart, D. R., & Williams, R. S. (2008) · Nature · doi:10.1038/nature06932 · Cited by 11,744 · see citing works
Self-citationRedox‐Based Resistive Switching Memories – Nanoionic Mechanisms, Prospects, and Challenges
Waser, R., Dittmann, R., Staikov, G., & Szot, K. (2009) · Advanced Materials · doi:10.1002/adma.200900375 · Cited by 5,080 · see citing works
Memristive switching mechanism for metal/oxide/metal nanodevices
Yang, J. J., Pickett, M. D., Li, X., Ohlberg, D. A. A., Stewart, D. R., & Williams, R. S. (2008) · Nature Nanotechnology · doi:10.1038/nnano.2008.160 · Cited by 2,987 · see citing works
Self-citationAtomic structure of conducting nanofilaments in TiO2 resistive switching memory
Kwon, D.-H., Kim, K. M., Jang, J. H., Jeon, J. M., Lee, M. H., Kim, G. H., Li, X.-S., Park, G.-S., Lee, B., Han, S., et al. (2010) · Nature Nanotechnology · doi:10.1038/nnano.2009.456 · Cited by 2,092 · see citing works
‘Memristive’ switches enable ‘stateful’ logic operations via material implication
Borghetti, J., Snider, G. S., Kuekes, P. J., Yang, J. J., Stewart, D. R., & Williams, R. S. (2010) · Nature · doi:10.1038/nature08940 · Cited by 1,929 · see citing works
Self-citationComplementary resistive switches for passive nanocrossbar memories
Linn, E., Rosezin, R., Kügeler, C., & Waser, R. M. (2010) · Nature Materials · doi:10.1038/nmat2748 · Cited by 1,274 · see citing works
The mechanism of electroforming of metal oxide memristive switches
Yang, J. J., Miao, F., Pickett, M. D., Ohlberg, D. A. A., Stewart, D. R., Lau, C. N., & Williams, R. S. (2009) · Nanotechnology · doi:10.1088/0957-4484/20/21/215201 · Cited by 860 · see citing works
Self-citationSwitching dynamics in titanium dioxide memristive devices
Pickett, M. D., Strukov, D. B., Borghetti, J. L., Yang, J. J., Snider, G. S., Stewart, D. R., & Williams, R. S. (2009) · Journal of Applied Physics · doi:10.1063/1.3236506 · Cited by 765 · see citing works
Self-citationMemristor−CMOS Hybrid Integrated Circuits for Reconfigurable Logic
Xia, Q., Robinett, W., Cumbie, M. W., Banerjee, N., Cardinali, T. J., Yang, J. J., Wu, W., Li, X., Tong, W. M., Strukov, D. B., et al. (2009) · Nano Letters · doi:10.1021/nl901874j · Cited by 671 · see citing works
Self-citationAnode-interface localized filamentary mechanism in resistive switching of TiO2 thin films
Kim, K. M., Choi, B. J., Shin, Y. C., Choi, S., & Hwang, C. S. (2007) · Applied Physics Letters · doi:10.1063/1.2749846 · Cited by 426 · see citing works
McCreery, R. L., & Bergren, A. J. (2009) · Advanced Materials · doi:10.1002/adma.200802850 · Cited by 362 · see citing works
Random Circuit Breaker Network Model for Unipolar Resistance Switching
Chae, S. C., Lee, J. S., Kim, S., Lee, S., Chang, S. H., Liu, C., Kahng, B., Shin, H., Kim, D., Jung, C. U., et al. (2008) · Advanced Materials · doi:10.1002/adma.200702024 · Cited by 349 · see citing works
Learning Abilities Achieved by a Single Solid‐State Atomic Switch
Hasegawa, T., Ohno, T., Terabe, K., Tsuruoka, T., Nakayama, T., Gimzewski, J. K., & Aono, M. (2010) · Advanced Materials · doi:10.1002/adma.200903680 · Cited by 328 · see citing works
Direct Identification of the Conducting Channels in a Functioning Memristive Device
Strachan, J. P., Pickett, M. D., Yang, J. J., Aloni, S., Kilcoyne, A. L. D., Medeiros‐Ribeiro, G., & Williams, R. S. (2010) · Advanced Materials · doi:10.1002/adma.201000186 · Cited by 327 · see citing works
Self-citationProgrammable Resistance Switching in Nanoscale Two-Terminal Devices
Jo, S. H., Kim, K.-H., & Lu, W. (2009) · Nano Letters · doi:10.1021/nl803669s · Cited by 302 · see citing works
High speed resistive switching in Pt∕TiO2∕TiN film for nonvolatile memory application
Yoshida, C., Tsunoda, K., Noshiro, H., & Sugiyama, Y. (2007) · Applied Physics Letters · doi:10.1063/1.2818691 · Cited by 271 · see citing works
A hybrid nanomemristor/transistor logic circuit capable of self-programming
Borghetti, J., Li, Z., Straznicky, J., Li, X., Ohlberg, D. A. A., Wu, W., Stewart, D. R., & Williams, R. S. (2009) · Proceedings of the National Academy of Sciences · doi:10.1073/pnas.0806642106 · Cited by 270 · see citing works
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Gergel-Hackett, N., Hamadani, B., Dunlap, B., Suehle, J., Richter, C. A., Hacker, C. A., & Gundlach, D. J. (2009) · IEEE Electron Device Letters · doi:10.1109/led.2009.2021418 · Cited by 244 · see citing works
A Family of Electronically Reconfigurable Nanodevices
Yang, J. J., Borghetti, J. L., Murphy, D. L. K., Stewart, D. R., & Williams, R. S. (2009) · Advanced Materials · doi:10.1002/adma.200900822 · Cited by 231 · see citing works
Self-citationA Low-Power Nonvolatile Switching Element Based on Copper-Tungsten Oxide Solid Electrolyte
Kozicki, M. N., Gopalan, C., Balakrishnan, M., & Mitkova, M. I. (2006) · IEEE Transactions on Nanotechnology · doi:10.1109/tnano.2006.880407 · Cited by 216 · see citing works
The O-Ta (Oxygen-Tantalum) system
Garg, S. P., Krishnamurthy, N., Awasthi, A., et al. (1996) · Journal of Phase Equilibria · doi:10.1007/bf02648373 · Cited by 205 · see citing works
Low current resistive switching in Cu–SiO2 cells
Schindler, C., Weides, M. P., Kozicki, M. N., & Waser, R. M. (2008) · Applied Physics Letters · doi:10.1063/1.2903707 · Cited by 200 · see citing works
Diffusion of Adhesion Layer Metals Controls Nanoscale Memristive Switching
Yang, J. J., Strachan, J. P., Xia, Q., Ohlberg, D. A. A., Kuekes, P. J., Kelley, R. D., Stickle, W. F., Stewart, D. R., Medeiros‐Ribeiro, G., & Williams, R. S. (2010) · Advanced Materials · doi:10.1002/adma.201000663 · Cited by 111 · see citing works
Self-citationChung, A., Deen, M. J., Lee, J., & Meyyappan, M. (2010) · Nanotechnology · doi:10.1088/0957-4484/21/41/412001 · Cited by 111 · see citing works
Unipolar Switching Behaviors of RTO $\hbox{WO}_{X}$ RRAM
Chien, W.-C., Chen, Y. C., Lai, E.-K., et al. (2010) · IEEE Electron Device Letters · doi:10.1109/led.2009.2037593 · Cited by 110 · see citing works
Resistive Switching in Nanogap Systems on SiO2 Substrates
Yao, J., Zhong, L., Zhang, Z., He, T., Jin, Z., Wheeler, P. J., Natelson, D., & Tour, J. M. (2009) · Small · doi:10.1002/smll.200901100 · Cited by 77 · see citing works
Force modulation of tunnel gaps in metal oxide memristive nanoswitches
Miao, F., Yang, J. J., Strachan, J. P., Stewart, D. R., Williams, R. S., & Lau, C. N. (2009) · Applied Physics Letters · doi:10.1063/1.3227651 · Cited by 46 · see citing works
Self-citationOkamoto, H. (2001) · Journal of Phase Equilibria and Diffusion · doi:10.1361/105497101770338635 · Cited by 23 · see citing works
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- Authors
- Yang, J. J., Zhang, M.-X., Strachan, J. P., Miao, F., Pickett, M. D., Kelley, R. D., Medeiros-Ribeiro, G., & Williams, R. S.
- Affiliations
- Hewlett-Packard (United States) (US)
- Hewlett-Packard Co. 1 , 1501 Page Mill Rd., Palo Alto, California 94304-1100, USA
- Venue
- Applied Physics Letters
- Publisher
- AIP Publishing
- Published
- 2010-12-06
- Volume
- 97
- Issue
- 23
- ISSN
- 0003-6951 (ISSN-L)
- 1077-3118
- OpenAlex
- W1986389668
- Semantic Scholar
- 3bc37c524437ff7d264faecf137ae292fa85c578
- Cited by
- 637
- References
- 28
- Citations by year
- 2026: 17 · 2025: 22 · 2024: 25 · 2023: 38 · 2022: 29 · 2021: 23 · 2020: 45 · 2019: 56 · 2018: 46 · 2017: 53 · 2016: 47 · 2015: 54 · 2014: 60 · 2013: 50 · 2012: 50
- FWCI
- 30.71
- Type
- journal article
- Language
- en
- Open access
- hybrid
- doi.org
- Locations
- Applied Physics Letters (publishedVersion, cc-by)
- Scholarworks (University of Massachusetts Amherst) (submittedVersion)
- ScholarWorks@UMassAmherst (University of Massachusetts Amherst) (submittedVersion)
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Advanced Memory and Neural Computing
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Ferroelectric and Negative Capacitance Devices
- Physical Sciences › Materials Science › Materials Chemistry › Phase-change materials and chalcogenides
- Keywords
- memristors, tantalum oxide, switching endurance, metal-oxide memristors, titanium oxide, solid-state thermodynamics, switching kinetics
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