The DOI matches its Crossref record; 24 of the 24 references it cites were found in a registry or an index.
Conjugated‐Polymer‐Functionalized Graphene Oxide: Synthesis and Nonvolatile Rewritable Memory Effect
Abstract
An ITO/TPAPAM-GO/Al memory device (see figure; ITO = indium tin oxide, TPAPAM-GO = graphene oxide covalently grafted with triphenylamine-based polyazomethine) exhibits typical bistable electrical switching and a nonvolatile rewritable memory effect with a turn-on voltage of −1.0 V and an ON/OFF-state current ratio of more than 103. Both ON and OFF state are stable under a constant voltage stress and survive up to 108 read cycles at a read voltage of −1.0 V.
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Cites
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Cited by
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Metadata
- Authors
- Zhuang, X., Chen, Y., Liu, G., Li, P., Zhu, C., Kang, E., Noeh, K., Zhang, B., Zhu, J., & Li, Y.
- Venue
- Advanced Materials
- Publisher
- Wiley
- Published
- 2010-04-15
- Volume
- 22
- Issue
- 15
- Pages
- 1731-1735
- ISSN
- 0935-9648 (ISSN-L)
- 1521-4095
- OpenAlex
- W2144854567
- Cited by
- 425
- References
- 24
- FWCI
- 33.14
- Type
- journal article
- Language
- en
- Open access
- closed
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- Zhuang, X., Chen, Y., Liu, G., Li, P., Zhu, C., Kang, E., Noeh, K., Zhang, B., Zhu, J., & Li, Y. (2010). Conjugated‐Polymer‐Functionalized Graphene Oxide: Synthesis and Nonvolatile Rewritable Memory Effect. Advanced Materials. https://doi.org/10.1002/adma.200903469
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