The DOI matches its Crossref record; 4 of the 4 references it cites were found in a registry or an index.
Single‐Gate Bandgap Opening of Bilayer Graphene by Dual Molecular Doping
Abstract
Dual doping-driven perpendicular electric field with opposite directions remarkably increase the on/off current ratio of bilayer graphene field-effect transistors. This unambiguously proves that it is possible to open a bandgap with two molecular dopants (F4-TCNQ and NH2 -functionalized self-assembled monolayers (SAMs)) even in a single-gate device structure.
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Cites
Two-dimensional gas of massless Dirac fermions in graphene
Novoselov, K. S., Geim, A. K., Morozov, S. V., Jiang, D., Katsnelson, M. I., Grigorieva, I. V., Dubonos, S. V., & Firsov, A. A. (2005) · Nature · doi:10.1038/nature04233 · Cited by 21,611
Biased Bilayer Graphene: Semiconductor with a Gap Tunable by the Electric Field Effect
Castro, E. V., Novoselov, K. S., Morozov, S. V., Peres, N. M. R., dos Santos, J. M. B. L., Nilsson, J., Guinea, F., Geim, A. K., & Neto, A. H. C. (2007) · Physical Review Letters · doi:10.1103/physrevlett.99.216802 · Cited by 2,033
Asymmetry gap in the electronic band structure of bilayer graphene
McCann, E. (2006) · Physical Review B · doi:10.1103/physrevb.74.161403 · Cited by 1,275
Quantum interference and Klein tunnelling in graphene heterojunctions
Young, A. F., & Kim, P. (2009) · Nature Physics · doi:10.1038/nphys1198 · Cited by 1,183
Self-citation
Cited by
Synthesis and characterization of sulfophenyl-functionalized reduced graphene oxide sheets
Ossonon, B. D., & Bélanger, D. (2017) · RSC Advances · doi:10.1039/c6ra28311j · Cited by 496
Tunable and sizable band gap in silicene by surface adsorption
Quhe, R., Fei, R., Liu, Q., Zheng, J., Li, H., Xu, C., Ni, Z., Wang, Y., Yu, D., Gao, Z., et al. (2012) · Scientific Reports · doi:10.1038/srep00853 · Cited by 295
Highly selective CO2 capture by S-doped microporous carbon materials
Seema, H., Kemp, K. C., Le, N. H., Park, S.-W., Chandra, V., Lee, J. W., & Kim, K. S. (2014) · Carbon · doi:10.1016/j.carbon.2013.09.006 · Cited by 277
Self-citationGobbi, M., Orgiu, E., & Samorì, P. (2018) · Advanced Materials · doi:10.1002/adma.201706103 · Cited by 267
The role of contact resistance in graphene field-effect devices
Giubileo, F., & Di Bartolomeo, A. (2017) · Progress in Surface Science · doi:10.1016/j.progsurf.2017.05.002 · Cited by 257
Metadata
- Authors
- Park, J., Jo, S. B., Yu, Y., Kim, Y., Yang, J. W., Lee, W. H., Kim, H. H., Hong, B. H., Kim, P., Cho, K., & Kim, K. S.
- Venue
- Advanced Materials
- Publisher
- Wiley
- Published
- 2011-12-12
- Volume
- 24
- Issue
- 3
- Pages
- 407-411
- ISSN
- 0935-9648 (ISSN-L)
- 1521-4095
- OpenAlex
- W1984325628
- Cited by
- 241
- References
- 4
- FWCI
- 9.14
- Type
- journal article
- Language
- en
- Open access
- closed
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- Park, J., Jo, S. B., Yu, Y., Kim, Y., Yang, J. W., Lee, W. H., Kim, H. H., Hong, B. H., Kim, P., Cho, K., & Kim, K. S. (2012). Single‐Gate Bandgap Opening of Bilayer Graphene by Dual Molecular Doping. Advanced Materials. https://doi.org/10.1002/adma.201103411
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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
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