The DOI matches its Crossref record; 22 of the 22 references it cites were found in a registry or an index.
Enhanced Charge Carrier Mobility in Two‐Dimensional High Dielectric Molybdenum Oxide
Abstract
We demonstrate that the energy bandgap of layered, high-dielectric α-MoO(3) can be reduced to values viable for the fabrication of 2D electronic devices. This is achieved through embedding Coulomb charges within the high dielectric media, advantageously limiting charge scattering. As a result, devices with α-MoO(3) of ∼11 nm thickness and carrier mobilities larger than 1100 cm(2) V(-1) s(-1) are obtained.
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Cites
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Cited by
Liu, Y., Xiao, C., Huang, P., Cheng, M., & Xie, Y. (2018) · Chem · doi:10.1016/j.chempr.2018.02.006 · Cited by 282
Interfacial sp C–O–Mo Hybridization Originated High-Current Density Hydrogen Evolution
Yao, Y., Zhu, Y., Pan, C., Wang, C., Hu, S., Xiao, W., Chi, X., Fang, Y., Yang, J., Deng, H., et al. (2021) · Journal of the American Chemical Society · doi:10.1021/jacs.1c02831 · Cited by 250
Metadata
- Authors
- Balendhran, S., Deng, J., Ou, J. Z., Walia, S., Scott, J., Tang, J., Wang, K. L., Field, M. R., Russo, S., Zhuiykov, S., Strano, M. S., Medhekar, N., Sriram, S., Bhaskaran, M., & Kalantar‐zadeh, K.
- Venue
- Advanced Materials
- Publisher
- Wiley
- Published
- 2012-10-23
- Volume
- 25
- Issue
- 1
- Pages
- 109-114
- ISSN
- 0935-9648 (ISSN-L)
- 1521-4095
- OpenAlex
- W2020989942
- Cited by
- 406
- References
- 22
- FWCI
- 10.28
- Type
- journal article
- Language
- en
- Open access
- closed
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- Balendhran, S., Deng, J., Ou, J. Z., Walia, S., Scott, J., Tang, J., Wang, K. L., Field, M. R., Russo, S., Zhuiykov, S., Strano, M. S., Medhekar, N., Sriram, S., Bhaskaran, M., & Kalantar‐zadeh, K. (2013). Enhanced Charge Carrier Mobility in Two‐Dimensional High Dielectric Molybdenum Oxide. Advanced Materials. https://doi.org/10.1002/adma.201203346
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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
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