The DOI matches its Crossref record; 5 of the 5 references it cites were found in a registry or an index.
Multiple Memory States in Resistive Switching Devices Through Controlled Size and Orientation of the Conductive Filament
Abstract
Multilevel operation in resistive switching memory (RRAM) based on HfOx is demonstrated through variable sizes and orientations of the conductive filament. Memory states with the same resistance, but opposite orientation of defects, display a different response to an applied read voltage, therefore allowing an improvement of the information stored in each physical cell. The multilevel scheme allows a 50% increase (from 2 to 3 bits) of the stored information.
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Cites
Redox‐Based Resistive Switching Memories – Nanoionic Mechanisms, Prospects, and Challenges
Waser, R., Dittmann, R., Staikov, G., & Szot, K. (2009) · Advanced Materials · doi:10.1002/adma.200900375 · Cited by 5,080
Lee, M.-J., Lee, C. B., Lee, D., Lee, S. R., Chang, M., Hur, J. H., Kim, Y.-B., Kim, C.-J., Seo, D. H., Seo, S., et al. (2011) · Nature Materials · doi:10.1038/nmat3070 · Cited by 2,228
Atomic structure of conducting nanofilaments in TiO2 resistive switching memory
Kwon, D.-H., Kim, K. M., Jang, J. H., Jeon, J. M., Lee, M. H., Kim, G. H., Li, X.-S., Park, G.-S., Lee, B., Han, S., et al. (2010) · Nature Nanotechnology · doi:10.1038/nnano.2009.456 · Cited by 2,092
Sub-nanosecond switching of a tantalum oxide memristor
Torrezan, A. C., Strachan, J. P., Medeiros-Ribeiro, G., & Williams, R. S. (2011) · Nanotechnology · doi:10.1088/0957-4484/22/48/485203 · Cited by 701
Origin of the Ultra‐nonlinear Switching Kinetics in Oxide‐Based Resistive Switches
Menzel, S., Waters, M., Marchewka, A., Böttger, U., Dittmann, R., & Waser, R. (2011) · Advanced Functional Materials · doi:10.1002/adfm.201101117 · Cited by 348
Cited by
Resistive switching memories based on metal oxides: mechanisms, reliability and scaling
Ielmini, D. (2016) · Semiconductor Science and Technology · doi:10.1088/0268-1242/31/6/063002 · Cited by 905
Self-citationSeok, J. Y., Song, S. J., Yoon, J. H., Yoon, K. J., Park, T. H., Kwon, D. E., Lim, H., Kim, G. H., Jeong, D. S., & Hwang, C. S. (2014) · Advanced Functional Materials · doi:10.1002/adfm.201303520 · Cited by 383
Guan, X., Hu, W., Haque, M. A., Wei, N., Liu, Z., Chen, A., & Wu, T. (2018) · Advanced Functional Materials · doi:10.1002/adfm.201704665 · Cited by 228
Celano, U., Goux, L., Degraeve, R., Fantini, A., Richard, O., Bender, H., Jurczak, M., & Vandervorst, W. (2015) · Nano Letters · doi:10.1021/acs.nanolett.5b03078 · Cited by 186
Zhou, W., Xiong, Y., Zhang, Z., Wang, D., Tan, W., Cao, Q., Qian, Z., & Du, Y. (2016) · ACS Applied Materials & Interfaces · doi:10.1021/acsami.5b11392 · Cited by 60
Metadata
- Authors
- Balatti, S., Larentis, S., Gilmer, D. C., & Ielmini, D.
- Venue
- Advanced Materials
- Publisher
- Wiley
- Published
- 2013-01-03
- Volume
- 25
- Issue
- 10
- Pages
- 1474-1478
- ISSN
- 0935-9648 (ISSN-L)
- 1521-4095
- OpenAlex
- W2101697736
- Cited by
- 179
- References
- 5
- FWCI
- 10.58
- Type
- journal article
- Language
- en
- Open access
- closed
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- Balatti, S., Larentis, S., Gilmer, D. C., & Ielmini, D. (2013). Multiple Memory States in Resistive Switching Devices Through Controlled Size and Orientation of the Conductive Filament. Advanced Materials. https://doi.org/10.1002/adma.201204097
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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.
